MTP12N10E NJSEMI | Alldatasheet
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J.E.I±E.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regu- lators, converters, solenoid and relay drivers.
- Silicon Gata for Fast Switching Speeds — Switching Times Specified at 100°C
- Designer's Data — IDSS. Vostonl- vGS(th| and SOA Specified at Elevated Temperature
- Rugged — SOA is Power Dissipation Limited
- Source-to-Orain Diode Characterized for Use With Inductive Loads MTM12N10 *MTP12N10E TMOS POWER FETs
12 AMPERES
RDS(on) = 0-W OHM
100 VOLTS
Drain-Gate Voltage (RQS = 1 Mfi) Gate-Source Voltage Continuous Non-repetitive (tp * 50 us] Drain Current — Continuous — Pulsed Total Power Dissipation @ Tc = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VQSM ID IDM PD Tj-Tjjtg Value 100 100 ±20 ±40 0.6 -65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W7°C Thermal Resistance Junction to Case Junction to Ambient TO 204 TO-220 Maximum Lead Temperature for Soldering TO-220 Purposes, V8" from case for 5 seconds TO-204 R0JC R0JA TL 1.67 62.5 260 300 °C/W MTM12N10 TO-204AA MTP12N10E TO-220AB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS ITc - 25°C unless otherwise noted) Symbol Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS - o, ID = 0.25 mA> Zero Gate Voltage Dram Current (VDS = R*'«d VDSS. VGS = oi (VDS = Rated VDSS- VQS = 0, Tj = 125°C) Gate-Body Leakage Current, Forward (VQSF = 20 Vdc, VDS " °) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = °> V(BR)DSS IDSS 'GSSF IGSSR 100 100 100 100 Vdc jiAdc nAdc nAdC ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS. ID = 1 mA) Tj = 100°C Static Drain-Source On Resistance (VQS = 10 Vdc, ID = 6 Adc) Dram-Source On-Voltaga (Vrjg = 10 V) (ID = 12Adc) (ID - 6 Adq, Tj = 100°C) Forward Transconduciancs (Vog = 15 V, ID - 6 A) vGS(tn> RDS(on) vDS(on) 9FS 1.5 4.5 0.18 2.6 2.2 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS ~ 25 v. VGS ~ °' f - 1 MHzl See Figure 11 Ciss CDSS Crss 800 400 100 PF SWITCHING CHARACTERISTICS* (Tj = 100"C) Turn-On Delay Time Rise Time Turn-Qff Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 25 V, ID = O.S Rated ID See Figures 9, 13 and 14 IVos - 0.8 Rated VDSS' ID = Rated ID, VGS = 10 V) See Figure 12 td(on) ld(off) tf Q9s Ogd 17 (Typ) 8 (Typ) 9 (Typl 150 200 100 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = Rated ID VGS = 0) VSD 'on trr 1.2 (Typ). 2.5 Vdc Limited by stray inductance 325 (Typ) - | ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0 25" from the package to the source bond pad) Ld LS 5 (Typ) 12.5 (Typ) nH INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the dram lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0 25" from package to source bond pad.l Ld LS 3 5 (Typ) 4 5 (Typl 7 5 (Typl nH
- Pulse Test Pulse Width '. 300 MS, Duty Cycle ', 2%