MTP12N08L NJSEMI | Alldatasheet

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u ^s.mi-Conducto'i , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These Logic LaveJ TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Low Drive Requirement to Interface Power Loads to Logic Level »Cs or Microprocessors — VQS(th) s 2 Volts m8X
  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100*0
  • Designer's Data — I&SS. VDS(on)' VQS(th) a«d SOA Specified at Elevated Temperature
  • Rugged •— SOA is Power Dissipation limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP12N08L MTP12N10L TMOS POWER FETs LOGIC LEVEL AMPERES *DS(onJ - 0.1SOHM 80 and 700 VOLTS Rating Draift'Source Voltage Drain-Gate Voltage <f»GS = 1 Mft) Gate-Source Voltage Drain Current — Continuous — Pulsed Towl Power Dissipation @ TC = 25"C Derate above 25"C Operating and Storage Temperature Range Symbol Voss L VDGR VGS ID 'DM ' PD Tj. TSq MTP12N001 MTP12N10L 100 100 = 1S 0.6 -6510150 Unit Vdc V<JC Vde Adc Watts w/*c THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Arnbient Maximum Lead Temperature for Soldering Purposes. 1/8" from casa for S seconds «WC RWA TL 7.67 62.5 275 "C/W ELECTRICAL CHARACTERISTICS (Tc = 2S'C noted) TO-220AB Characteristic Symbol HWW Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage «VGS = o. ID «= 2SO ^AI MTPIZNOSL MTP12N1OL Zero Gate Voltage Drain Currant (Vos = Rated VpsS- VGS " OI (Vps « R«*d VDSS- vcss « o. TJ = 125*0 vtep|oss IDSS 100 L X Vdc »tAOc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS — continued ITC = 2gC ufllessjKnei-wise rioted) Characteristic OFF CHARACTERISTICS (continued) Gate-Body Leakage Current, Forward (VGSF* iSVdc, VDS = 0) Gate Body leakage Currant. Reverse <VG5R ~ 's Vde- VDS - °' Symbol MTn Unit IGSSF 'GSSR 100 100 nAdc nAdC ON CHARACTERISTICS Gat* Threshold Votogc (Tj = KWO Static Drain-Source On-Resistance iv^g = $ v«, ip = 6 Adc) Drain-Source On-Voltage (VGS = S V) (ID = 12 Add llQ = 6 Ado. Tj = 100°CI Forward TransconduCtaAoe (Vjjg = 10 V. IQ = 6 A) vGS(thl rDS(on) VOS(On) 9FS 0.75 1.S 0.18 2.4 1.6 vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS input Capacitance Reverse Transfer Capacitance Output Capacitance VQS a 25 V, VQS a a f - 1 MHl VGS = 15 v- VDS = 0. f = 1 MHr VDg = 25 V, VQS = 0- f - 1 MH* VGS = 1S v- VDS = o. f « i MHI VOS w 25 V, VQS - 0. f = 1 MHz C;M crss coss 800 2600 350 1600 100 PF pF pf SWTTCHING CHARACTERISTICS (Tj = 100*C) Turn-On Delay T»me Rise Time Turn-Off Delay Time Fail Time , Total Gate Charge Gate-Source Charge Gate-Drain Charge iVDD= 25V. ID = 6A. VGS = S V, R9en = 50 ohms) {Vos " °-8 R«ed VDSS- t0 = 12 A. VQS = 5Voe) See Rgures 11 and 12. 'd(On) 'd(off) Qa Q^s °9d 1S(typ) 3.' ttvp) 11.3(typ) ISO 130 ISO SS ns nC SOURCE DRAIN WOOE CHARACTERISTICS Forward On-Vo1»g« Forward Tum-On Time Reverse Recovery Time . <IS - Rated ID, VQS « 0) See Figures 14 and IS. VSD ton trr Ktypl 1.25 Vdc Limited by Stray inductance 325 (typ) ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of di«) Internal Source Inductance (Measured from the source lead 0.2S" from package to source bond pad.) Ld 3.$ (typ) 4-5 Itvp) LS ; '.S (typ) nH

  • Pulse Test: Pulse Width * 300 MS. Duty Cycle « 2%.