MTP10N35 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regu- lators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
  • Designer's Data — IDSS* vDS(on)- VQS(th) and SOA Specified at Elevated Temperature
  • Rugged — SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads MTP10N35 MTP10N40 TMOS POWER FETs

10 AMPERES

"-DS(on) = 0.55 OHM 350 and 400 VOLTS MAXIMUM RATINGS THERMAL CHARACTERISTICS Rating Drain-Source Voltage^ Drain-Gate Voltage (RGS = 1 Mfii Gate-Source Voltage — Continuous — Non-repetitive Up s; 50 /is} Drain Current Continuous Pulsed Total Power Dissipation (n Trj = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD Tj, T5tg MTP 10N35 350 350 10N40 400 400 r20 -40 125 -65to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W,"C TO-220AB Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 18" from case for 5 seconds RWC RflJA TL i 62.5 275 °C/W

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 ELECTRICAL CHARACTERISTICS (Tc = 2S°C unless otherwise noted) Characteristic Symbol Mln Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0. ID = "-25 mA) MTP10N35 MTP10N40 Zero Gate Voltage Drain Current (VDS = Rated VDSS. VGS - Ol (VDS = 0.8 Rated VrjSS. VGS = 0, Tj = 125°C) Gate-Body Leakage Current, Forward (VQSF = 20 vdc, vDs = 01 Gate-Body Leakage Current, Reverse (VQSR = 20 vdc. vDs - 01 V(BR)DSS IDSS IGSSF IGSSR 350 400 0.2 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS. 'o - i mAi Tj = 100°C Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5Adc) Drain-Source On-Voltage (VGS = 10V) (ID = 10Adc) (ID = SAdc, Tj = 100°C) Forward Transconductance (VDS = 10 v. ID = 5 A) VQSIth) rDS(on) VoSlonl 9FS 1.5 4.5 0.55 4.75 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS - 25 v VGS ~ o f = 1 MHz) See Figure 11 Ciss coss Crss 1600 350 150 pf SWITCHING CHARACTERISTICS* (Tj = 100°C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 25 V, ID = 0.5 Rated ID See Figures 9, 13 and 14 (VDS ~ ° 8 Rated VDSS. ID = Rated ID. VGS = 10 V) See Figure 12 'dlonl 'd(off) tf Qgs Qgd 40 (Typ) 20 (Typ) 20 (Typl 150 200 120 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Vottage Forward Turn-On Time Reverse Recovery Time (IS ~ Rated ID VGS = 0) VSD *on <rr 1.1 (Typ) Vdc Limited by stray inductance 600 (Typ) ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad.) Ld Ls 3.5 (Typ) 4.5 (Tvp) 7.5 (Typ) nH

  • Pulu Toil: PulK Width c 300 n. Duty Cycle c 2%.