MTP10N08 NJSEMI | Alldatasheet

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J £Z>£mi-L.onau.ctoi , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs,

11 A, 60-100 V

Power And Discrete Division

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. Low RDs<on) VQS Rated at ±20 V Silicon Gate for Fast Switching Speeds bss. Vos(on), Specified at Elevated Temperature Rugged Low Drive Requirements Ease of Paralleling Product Summary TO-204AA TO-220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 Part Number IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 VDSS 100 V 60 V 100 V 60 V 100 V 60 V 100 V 60 V 80 V 100 V RoS(on) 0.30 n 0.30 n 0.40 n 0.40 n 0.30 n 0.30 n o.4o n 0.40 Ji 0.33 fi 0.33 n ID at Tc = 25°C 8.0 A 8.0 A 7.0 A 7.0 A 8.0 A 8.0 A 7.0 A 7.0 A 10 A 10 A ID at Tc = 100-C 5.0 A 5.0 A 4.0 A 4.0 A 5.0 A 5.0 A 4.0 A 4.0 A 6.4 A 6.4 A Case Style TO-204AA TO-220AB Notes For information concerning connection diagram and package outline, refer to Section 7. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Tj, T8|g TL Characteristic Drain to Source Voltage1 Drain to Gate Voltage1 RQS = 20 kft Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s Rating IRF120/122 IRF520/522 MTP10N10 100 100 ±20 -55 to +150 275 Rating MTP10N08 ±20 -55 to +150 275 Rating IRF122/123 IRF522/523 ±20 -55 to +150 275 Unit V V V Maximum Thermal Characteristics R«JC RftJA PD IDM Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Total Power Dissipation at Tc = 25°C Pulsed Drain Current2 IRF120-123/IRF520-523 3.12 MTP10N08/10 1.67 "C/W °C/W W A Electrical Characteristics (Tc = 25°C unless otherwise noted) Symbol Characteristic Win Max Unit Test Conditions Off Characteristics V(BR)DSS loss IQSS Drain Source Breakdown Voltage1 IRF120/122/520/522/ MTP10N10 MTP10N08 IRF121/123/521/523 Zero Gate Voltage Drain Current Gate-Body Leakage Current IRF120-123 IRF520-523/MTP10N08/10 100 250 1000 ±100 + 500 V UA MA nA VGS = 0 V, ID = 250 MA VDS - Rated VDSS. VGS - 0 V VDS = 0.8 x Rated VDSs, VGS = 0 V, TC=125°C VQS - ± 20 v, VDS - o V

Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) Symbol Characteristic Win Max Unit Test Conditions On Characteristics VGS(UI) RDS(on) VDS(on) 9ls Gate Threshold Voltage IRF120-123/IRF520-523 MTP10N08/10N10 Static Drain-Source On-Resistance2 IRF120/121/520/521 MTP10N08/10N10 IRF122/123/522/523 Drain-Source On-Voltage2 MTP 10N08/10N10 Forward Transconductance 2.0 2.0 1.5 4.0 4.5 0.30 0.33 0.40 4.0 3.3 V n V V S (U) ID = 250 MA, VDS = VQS ID = 1 mA, VDS = VGS VGS -10 V ID = 4.0 A ID = 5.0 A ID = 4.0 A VGS =10 V; ID -10.0 A VQS = 10 V, ID = 5.0 A T0= 100-C VDs = 10 V, ID = 4.0 A Dynamic Characteristics Mss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 600 400 100 PF pF pF VDS = 25 V, VGS = o v f- 1.0 MHz Switching Characteristics (Tc = 25°C, Figures 1, 2)3 td(on) td(oH) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge ^ 70 100 ns ns ns ns nC VDD = 50 V, ID = 4.0 A VQS= 10 V, RGEN = 50 a RGS = 50 n VGS -10 v, ID = 10 A VDD =• 50 V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics VSD tn- Diode Forward Voltage IRF120/121/520/521 IRF122/123/522/523 Reverse Recovery Time 280 2.5 2.3 V V ns ls = 8.0 A; VGS = 0 V ls - 7.0 A; VGS = 0 V ls - 4.0 A; dls/dt - 25 A/MS Notes 1. Tj - +25'O to +150'C 2. Pulse width limited by Tj 3. Switching time measurements performed on LEM TR-5B test equipment.