MTP0703BQ8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • RDS(ON)=7.5mΩ@VGS=-10V, ID=-12A RDS(ON)=12mΩ@VGS=-5V, ID=-9A
  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free and Halogen-free package Equivalent Circuit Outline MTP0703BQ8 S：Source D：Drain G：Gate SOP-8

CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 2/6 MTP0703BQ8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -30 V Gate-Source V oltage VGS ±25 V Continuous Drain Current @TC=25 °C ID -15 A Continuous Drain Current @TC=100 °C ID -11 A Pulsed Drain Current (Note 1) IDM -60 A Avalanche Current IAS -25 A Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω EAS 31.25 mJ TA=25 °C 3 W Power Dissipation TA=100 °C PD 1.5 W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+175 °C Note : 1.Pulse width limited by maximum junction temperature. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±25V , VDS=0 IDSS - - -1 μA VDS=-24V , VGS=0 IDSS - - -10 μA VDS=-20V , VGS=0, Tj=125°C ID(ON) (Note 1) -15 - - A VDS=-5V , VGS=-10V - 6 7.5 ID=-12A, VGS=-10V RDS(ON) (Note 1) - 9 12 mΩ ID=-9A, VGS=-5V GFS (Note 1) - 28 - S VDS=-5V , ID=-12A Dynamic Ciss - 15545 - Coss - 3776 - Crss - 3507 - pF VDS=-15V , VGS=0, f=1MHz td(ON) (Note 1&2) - 26 - tr (Note 1&2) - 22 - td(OFF) (Note 1&2) - 75 - tf (Note 1&2) - 15 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=2.7Ω Qg(VGS=10V) (Note 1&2) - 56 - Qg(VGS=5V) (Note 1&2) - 40 - Qgs (Note 1&2) - 15 - Qgd (Note 1&2) - 18 - nC VDS=-15V , ID=-10A, VGS=-10V , Rg - 3 - Ω VGS=15mV , VDS=0, f=1MHz

CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 3/6 MTP0703BQ8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode IS - - -3.6 ISM(Note 3) - - -14.4 A VSD(Note 1) - - -1.2 V IF=IS, VGS=0V trr - 52 - ns Qrr - 60 - nC IF=IS, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Thermal Resistance Ratings Thermal Resistance Symbol Typical Maximum Unit Junction-to-Case RθJC 25 Junction-to-Ambient (Note) RθJA 50 °C / W Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper.

CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 4/6 MTP0703BQ8 CYStek Product Specification Characteristic Curves - 4.5V -V - Drain-to-S ource Voltage(V) -I - Drain C urrent(A) D DS GSV = - 10V - 6.0V - 3.5V - 3.0V - 4.0V On-Region Charact erist ics -4.0V -4.5V -5.0V -6.0V -10V VG S= -3.5V - ID, D rain Current( A ) RDS(ON), Normalized Drain-S ource On-R esistance On- Resistance Variation with Drain Current and Gat e Vol t age 0 15 30 45 60 0.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.5 T - J unction Temperature (°C ) R - Normalized Drain-S ource On-R esistance -50 0.6 DS(on) 0.8 1.0 J -25 0 25 50 D V = - 10V 1.2 1.4 1.6 GS 15010075 125 175 On-R esistance Variation with Temperature I = - 15 A R - On-Resistance(Ω) DS(ON) GS 861 0 DI = - 7.5 A - V - Gate-S ource Voltage( V ) On-R esistance Variation with Gate-S ource Voltage 0.030 0.025 0.020 0.015 0.010 0.005 T = 125° CA T = 25° CA -V - Gate-to-Source Voltage(V) D 1.5 GS 22 . 5 V = - 5V DS 3.534 T = 125°CA - 55°C 25°C Transfer Characteristics -I - Drain Current(A) Body Diode Forward Voltage Variation with S ource C urrent and Temperature 25° C -V - Body Diode Forward Voltage(V) 0.6 0.1 0.0001 0.001 0.01 SD 0.2 0.4 V = 0V10 100 T = 125° CA GS 0.8 1.0 -55° C 1.2 -Is - R everse Drain C urrent(A)

CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 5/6 MTP0703BQ8 CYStek Product Specification Q - Gat e Ch ar ge ( n C) Gat e Charge Charact erist ics - V - Gate-to-S ource Voltage(V)GS g 15 30 D 6045 75 DSV = - 5V I = - 15A - 15V - 10V - V , Drain-to-S ource Volt Characteristic Curves(Cont.) age(V) 4000 8000 DS 51 0 Co ss Cr ss 12000 16000 20000 Ci ss 2515 20 30 GS f = 1 MH z V = 0 V C apacitance C haracteristics C apacitance(pF) t ,Time (sec) S ingle Pulse Maximum Power Dissipation P(pk),Peak Tr ansi ent Pow er (W) 0.001 0.10.01 1001011 000 S ingle P ulse R = 125° C / W T = 25° C θJA A SING LE PULSE RθJA= 125° C/W TA= 25° C DC 10s 100ms 10ms 1ms 100μsRDS(ON) LIMIT 0.01 0.1 1 10 100 0.01 0.1 100 -VDS, Drain-Source Volt age( V ) - ID, Drain C urent( A ) Maximum Safe Operat ing Area VGS= -10V P(pk) RθJA(t)= r(t) * RθJA RθJA= 125°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D=0.5 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 t1,TIME( sec ) Transient Thermal Resistance Curve , Normalized Effetive Transient Thermal Resistance r(t)

CYStech Electronics Corp. Spec. No. : C451Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 6/6 MTP0703BQ8 CYStek Product Specification SOP-8 Dimension 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A 0703 □□□□ Date Code *: Typical H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.