MTNN081404SH8

MTNN081404SH8 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 1/13 MTNN081404SH8 CYStek Product Specification Asymmetric Dual N- Channel Enhancement Mode MOSFET MTNN081404SH8 Tr 1 Tr 2 BVDSS 40V 40V ID@VGS=10V , TA=25°C 9.8A 12A Features ID@VGS=10V , TC=25°C 44A 65A

• Simple drive requirement RDSON(typ)@VGS=10V 9.8mΩ 6.3mΩ
• Low on-resistance RDSON(typ)@VGS=4.5V 14.3mΩ 8.0mΩ
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

MTNN081404SH8-0-T6-G DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel DFN5×6 MTNN081404SH8 Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Top View Bottom View Product name

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 2/13 MTNN081404SH8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol Tr 1 Tr 2 Unit Drain-Source Breakdown V oltage BVDSS 40 40 Gate-Source V oltage VGS ±20 ±20 V TA=25 °C, VGS=10V 9.8 12 TA=70 °C, VGS=10V 7.8 9.6 TC=25 °C, VGS=10V 44 65 Continuous Drain Current TC=100 °C, VGS=10V ID 27.8 41 Pulsed Drain Current (Note 1 & 2) IDM 88 130 Single Pulse Avalanche Current @ L=0.1mH IAS 20 40 A Single Pulse Avalanche Energy (Note 4) EAS 20 80 mJ TA=25 °C (Note 3) 2.01 2.08 TA=70 °C (Note 3) PDSM 1.2 1.3 TC=25 °C 48 69 Power Dissipation TC=100 °C PD 19 27 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.6 1.8 Thermal Resistance, Junction-to-ambient, max 62 60 Thermal Resistance, Junction-to-ambient, max (Note 3) RθJA 27 25 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. 4. For Tr 1, 100% tested by conditions of L=0.5mH, VDD=15V , VGS=10V , IAS=5A; for Tr 2, 100% tested by conditions of L=0.5mH, VDD=15V , VGS=10V , IAS=12A Tr 1, Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - VGS=0V , ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=32V , VGS=0V IDSS - - 25 μA VDS=30V , VGS=0V , Tj=125°C - 9.8 14 VGS=10V , ID=12A *RDS(ON) - 14.3 19.5 mΩ VGS=4.5V , ID=10A *GFS - 7.8 - S VDS=10V , ID=5A

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 3/13 MTNN081404SH8 CYStek Product Specification Dynamic Ciss - 708 - Coss - 107 - Crss - 55 - pF VDS=20V , VGS=0V , f=1MHz *td(ON) - 8.4 - *tr - 13 - *td(OFF) - 25.6 - *tf - 7.4 - ns VDS=20V , ID=12A, VGS=10V , RG=1Ω *Qg(VGS=10V) - 14.6 - *Qg(VGS=4.5V) - 7.3 *Qgs - 2 - *Qgd - 4 - nC VDS=20V , ID=12A, VGS=10V Body Diode *VSD - 0.73 1 V VGS=0V , IS=1A *trr - 10.8 - ns *Qrr - 4.6 - nC IF=6A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Tr 2, Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - VGS=0V , ID=-250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=32V , VGS=0V IDSS - - 25 μA VDS=30V , VGS=0V , Tj=125°C - 6.3 8 VGS=10V , ID=12A *RDS(ON) - 8.0 12 mΩ VGS=4.5V , ID=10A *GFS - 11.4 - S VDS=10V , ID=7A Dynamic Ciss - 1466 - Coss - 178 - Crss - 117 - pF VDS=20V , VGS=0V , f=1MHz *td(ON) - 13.6 - *tr - 15.4 - *td(OFF) - 43.2 - *tf - 8.2 - ns VDS=20V , ID=12A, VGS=10V , RG=1Ω *Qg(VGS=10V) - 31.2 - *Qg(VGS=4.5V) - 15.9 - *Qgs - 5.3 - *Qgd - 7.2 - nC VDS=20V , ID=12A, VGS=10V Body Diode *VSD - 0.72 1 V VGS=0V , IS=1A *trr - 15 - ns *Qrr - 8.2 - nC IF=12A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 4/13 MTNN081404SH8 CYStek Product Specification Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 5/13 MTNN081404SH8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 012345 VDS, Drain-Source Voltage(V) ID, Drain Current(A) VGS=3V 3.5V 10V, 9V, 8V, 7V, 6V, 5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=12A RDS(ON)@Tj=25°C : 9.8mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=12A

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 6/13 MTNN081404SH8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold VoltageID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.1 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 048 1 2 1 6 2 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=12A VDS=30V VDS=20V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 1ms 100μsRDS( ON) Limited TA=25°C, Tj=150°C, VGS=10V RθJA=62°C/W, Single Pulse 100ms Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 T J, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V RθJA=62°C/W

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 7/13 MTNN081404SH8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=62°C/W Typical Transfer Characteristics 0123456 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62°C/W

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 8/13 MTNN081404SH8 CYStek Product Specification Typical Characteristics : Q2( N-channel) Typical Output Characteristics 012345 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 5V, 4V VGS=3V 3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 I S, Source Drain Current(A) VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 1 0 VGS=0V Tj=25°C Tj=150°C Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain-Source On-State Resistance VGS=10V, ID=12A RDS( ON)@Tj=25°C : 6.3mΩ typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) ID=12A

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 9/13 MTNN081404SH8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.1 100 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS10V Pulsed TA=25°C Gate Charge Characteristics 0 4 8 12 16 20 24 28 32 36 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=12A VDS=30V VDS=20V Maximum Safe Operating Area 0.01 0.1 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 100μs TA=25°C, Tj=150°C, VGS=10V RθJA=60°C/W, Single Pulse 1ms RDS( ON) Limited Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=10V RθJA=60°C/W

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 10/13 MTNN081404SH8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(N-channel) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=60°C/W Typical Transfer Characteristics 012345 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=60°C/W

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 11/13 MTNN081404SH8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 12/13 MTNN081404SH8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C705H8 Issued Date : 2016.11.09 Revised Date : Page No. : 13/13 MTNN081404SH8 CYStek Product Specification DFN5×6 Dimension E2 2.02 2.42 0.080 0.095 α 0° 12° 0° 12° e 1.27 BSC 0.050 BSC Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Marking: Date Code Device Name 8-Lead DFN5×6 Plastic Package 0814 04S □□□□ Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.