MTN6N70FP

MTN6N70FP CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package

Applications

• Adapter
• Switching Mode Power Supply Symbol Outline MTN6N70FP TO-220FP G：Gate D：Drain S：Source BVDSS : 700V RDS(ON) : 1.23Ω (typ.) G D S ID : 6A

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 2/ 10 MTN6N70FP CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 700 V Gate-Source V oltage VGS ±30 V Continuous Drain Current ID 6* A Continuous Drain Current @TC=100°C ID 3.6* A Pulsed Drain Current @ VGS=10V (Note 1) IDM 24* A Single Pulse Avalanche Energy (Note 2) EAS 135 mJ Avalanche Current (Note 1) IAR 6 A Repetitive Avalanche Energy (Note 1) EAR 5.4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor PD 54

0.3 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=6A, VDD=50V, L=7mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤6A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.3 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 3/ 10 MTN6N70FP CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 700 - - V VGS=0, ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.65 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 3 - S VDS =15V , ID=3A IGSS - - ±100 nA VGS=±30 - - 1 VDS =650V , VGS =0 IDSS - - 10 μA VDS =520V , VGS =0, Tj=125°C *RDS(ON) - 1.23 1.5 Ω VGS =10V , ID=3A Dynamic *Qg - 19 - *Qgs - 5.1 - *Qgd - 6.9 - nC ID=6A, VDS=520V , VGS=10V *td(ON) - 12 - *tr - 13 - *td(OFF) - 25 - *tf - 13 - ns VDS=325V , ID=6A, VGS=10V , RG=25Ω Ciss - 1350 - Coss - 120 - Crss - 26 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 6 *ISM - - 24 A *VSD - - 1.5 V IS=6A, VGS=0V *trr - 330 - ns *Qrr - 2.8 - μC VGS=0, IF=6A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(RoHS compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 4/ 10 MTN6N70FP CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 05 06 0 Drain-Source Voltage -VDS(V) Drain Current - ID(A) VGS=4.5V 15V 10V 5.5V Static Drain-Source On-resistance vs Ambient Temperature 0.5 1.5 2.5 3.5 -100 -50 0 50 100 150 200 Ambient Temperature-Ta(°C) Static Drain-Source On-state Resistance-RDS(on)(Ω) ID=3A, VGS=10V Static Drain-Source On-State resistance vs Drain Current 0.5 1.5 0.1 1 10 100 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=10V Drain Current vs Gate-Source Voltage 0 5 10 15 20 Gate-Source Voltage-VGS(V) Drain Current-ID(on)(A) Ta=25°C VDS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.5 1.5 2.5 3.5 4.5 02468 1 0 1 2 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω)ID=3A Ta=25°C Forward Drain Current vs Source-Drain Voltage 0.1 100 Source Drain Voltage -VSD(V) Forward Current-IF(A) VGS=0V Ta=25°C Ta=150°C

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 5/ 10 MTN6N70FP CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 100 1000 10000 0 5 10 15 20 25 30 Drain-to-Source Voltage-VDS(V) Capacitance-(pF) Ciss Coss Crssf=1MHz Brekdown Voltage vs Ambient Temperature 600 650 700 750 800 -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) Drain-Source Breakdown Voltage BVDSS(V) ID=250μA, VGS=0V Maximum Safe Operating Area 0.01 0.1 100 1 10 100 1000 Drain-Source Voltage -VDS(V) Drain Current --- ID(A) Operation in this area is limited by RDS(ON) DC 100ms 10ms 1ms 100μs 10μs Gate Charge Characteristics 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge---Qg(nC) Gate-Source Voltage---VGS(V) ID=6A VDS=120V VDS=300V VDS=520V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 Case Temperature---TC(°C) Maximum Drain Current---ID(A)

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 6/ 10 MTN6N70FP CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pl 0.01 0.02 0.05 0.1 0.2 D=0.5 1.ZθJC(t)=2.3 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t)

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 7/ 10 MTN6N70FP CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 8/ 10 MTN6N70FP CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 9/ 10 MTN6N70FP CYStek Product Specification TO-220FP (C Forming) Dimension *Typical A1 0.051 REF 1.300 REF e 0.100* 2.540* A2 0.110 0.126 Marking: Date Code Device Name Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP 2.800 3.200 F 0.106 REF 2.700 REF D 0.392 0.408 9.960 10.360 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 10/ 10 MTN6N70FP CYStek Product Specification TO-220FP (S Forming) Dimension *Typical Inches Millimeters Inches Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Marking: Date Code Device Name A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.