MTN5N50BI3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package
  • Pb-free lead plating and halogen-free package Symbol Outline TO-251 MTN5N50BI3 G：Gate D：Drain S：Source G D S

Ordering Information

(Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 2/10 MTN5N50BI3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 500 Gate-Source V oltage VGS ±30 V Continuous Drain Current @TC=25°C, VGS=10V 4.5 Continuous Drain Current @TC=100°C, VGS=10V ID 2.8 Pulsed Drain Current (Note 1) IDM 18 A Single Pulse Avalanche Energy (Note 2) EAS 90 mJ Avalanche Current (Note 1) IAS 4.5 A Repetitive Avalanche Energy (Note 1) EAR 4.8 mJ Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TL 300 °C Total Power Dissipation (TA=25℃) (Note 4) 2 W W Total Power Dissipation (TC=25℃) Linear Derating Factor PD 48

0.38 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.6 Thermal Resistance, Junction-to-ambient, max (Note 4) 50 Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4.5A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤4.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. 4. When the device is mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 500 - - V VGS=0V , ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.6 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 5 - S VDS =15V , ID=2.25A IGSS - - ±100 nA VGS=±30V - - 1 VDS =500V , VGS =0V IDSS - - 10 μA VDS =400V , VGS =0V , TC=125°C *RDS(ON) - 1.1 1.5 Ω VGS =10V , ID=2.25A Dynamic *Qg - 17.4 - *Qgs - 3.4 - *Qgd - 7.6 - nC ID=4.5A, VDD=400V , VGS=10V

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 3/10 MTN5N50BI3 CYStek Product Specification *td(ON) - 10.6 - *tr - 10 - *td(OFF) - 35 - *tf - 31.2 - ns VDD=250V , ID=4.5A, VGS=10V , RG=25Ω Ciss - 572 - Coss - 65 - Crss - 32 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 4.5 *ISM - - 18 A *VSD - - 1.5 V IS=4.5A, VGS=0V *trr - 260 - ns *Qrr - 1.1 - μC VGS=0, IF=4.5A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 4/10 MTN5N50BI3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 0 5 0 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V 6.5V 5.5V VGS=5V Static Drain-Source On-State resistance vs Drain Current 0.0 0.5 1.0 1.5 2.0 0.01 0.1 1 10 ID, Drain Current(A) RDS(ON) , Static Drain-Source On- State Resistance(Ω) VGS=10V Static Drain-Source On-resistance vs Ambient Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) RDS(ON), Normalized Static Drain-Source On-state Resistance ID=2.25A, VGS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Forward Drain Current vs Source-Drain Voltage 0.001 0.01 0.1 100 VSD, Source Drain Voltage(V) IF, Forward Current(A) VGS=0V Ta=25°CTa=150°C VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(Ω) ID=2.25A Ta=25°C

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 5/10 MTN5N50BI3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Capacitance(pF) Ciss Coss Crssf=1MHz Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=15V Gate Charge Characteristics 048 1 2 1 6 2 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=4.5A VDS=100V VDS=250V VDS=400V Maximum Safe Operating Area 0.01 0.1 100 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) RDS( ON) Limited DC 100μs 10μs TC=25°C, Tj(max)=150°C VGS=10V, RθJC=2.6°C/W Single pulse 100ms 10ms 1ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=2.6°C/W

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 6/10 MTN5N50BI3 CYStek Product Specification Typical Characteristics(Cont.) Drain Current vs Gate-Source Voltage 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current(A) Ta=25°C VDS=30V VDS=10V Single Pulse Power Rating, Junction to Case 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.6°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.6°C/W

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 7/10 MTN5N50BI3 CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 8/10 MTN5N50BI3 CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 9/10 MTN5N50BI3 CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 10/10 MTN5N50BI3 CYStek Product Specification TO-251 Dimension Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Marking: CYS 5N50B □□□□ Product Name Date Code 1 2 3