MTN3607E3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package

Applications

  • Switching Mode Power Supply
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits

Ordering Information

(RoHS compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 2/10 MTN3607E3 CYStek Product Specification Symbol Outline MTN3607E3 D：Drain S：Source G：Gate TO-220 G D S Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 75 V Gate-Source V oltage VGS ±20 V Continuous Drain Current ID 75* A Continuous Drain Current @TC=100°C ID 52* A Pulsed Drain Current @ VGS=10V (Note 2) IDM 300* A Single Pulse Avalanche Energy (Note 3) EAS 400 mJ Avalanche Current (Note 2) IAR 40 A Repetitive Avalanche Energy (Note 2) EAR 23 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns ESD susceptibility (Note 5) 2000 V Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ PD 230

1.53 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. IAS=70A, VDD=25V, L=0.1mH, RG=25Ω, starting TJ=+25 .℃ 4. ISD=40A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. 5. Human body model, 1.5kΩ in series with 100pF.

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 3/10 MTN3607E3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 0.65 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62 °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 75 - - V VGS=0, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 25.5 - S VDS =15V , ID=37.5A IGSS - - ±100 nA VGS=±20 - - 1 VDS =60V , VGS =0 IDSS - - 10 μA VDS =50V , VGS =0, Tj=125°C *RDS(ON) - 7.8 9.5 mΩ VGS =10V , ID=37.5A Dynamic *Qg - 90 - *Qgs - 24 - *Qgd - 36 - nC ID=37.5A, VDD=38V , VGS=10V *td(ON) - 20 - *tr - 25 - *td(OFF) - 27 - *tf - 18 - ns VDD=38V , ID=75A, VGS=10V , RG=3.3Ω Ciss - 5376 - Coss - 401 - Crss - 337 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 75 *ISM - - 300 A *VSD - - 1.5 V IS=37.5A, VGS=0V *trr - 32 - ns *Qrr - 40 - nC VGS=0, IF=75A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 4/10 MTN3607E3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 150 200 250 300 02468 1 0 Brekdown Voltage vs Ambient Temperature 100 -100 -50 0 50 100 150 200 Tj, Junction Temperature(°C) BVDSS, Drain-Source Breakdown Voltage(V) ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V VGS=7V VGS=6V VGS=5V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V Typical Transfer Characteristics 100 150 200 250 300 350 02468 1 0 1 2 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2468 1 0 Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 25 30 35 40 IS, Source Drain Current(A) VSD, Source-Drain Voltage(V) VGS=0V Tj=150°C Tj=25°C VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=37.5A

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 5/10 MTN3607E3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Drain-Source On-State Resistance vs Junction Tempearture -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V, ID=37.5A VGS=10V, ID=10A Gate Charge Characteristics 0 20 40 60 80 100 120 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=37.5A VDS=60V VDS=38V VDS=15V Threshold Voltage vs Junction Tempearture 1.5 2.5 3.5 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) VGS(th), Threshold Voltage(V) ID=250uA Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) Maximum Safe Operating Area 0.01 0.1 100 1000 11 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 100 Operation in this area is limited by RDS(ON) DC 10ms 1ms 100μs 10μs

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 6/10 MTN3607E3 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.ZθJC(t)=0.65 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t)

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 7/10 MTN3607E3 CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 8/10 MTN3607E3 CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 9/10 MTN3607E3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C579E3 Issued Date : 2011.10.20 Revised Date : 2013.12.20 Page No. : 10/10 MTN3607E3 CYStek Product Specification TO-220 Dimension *: Typical Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. Marking: 3607 □□□□ Device Name Date Code 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 DIM Min. Max. Min. Max. Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.