MTN3418BN3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Low on-resistance
  • High speed switching
  • Low-voltage drive(2.5V)
  • Easily designed drive circuits
  • Pb-free package Symbol Outline MTN3418BN3 SOT-23 D G SG：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDSS 30 V Gate-Source V oltage VGSS ±20 V Continuous ID 1.7 A Drain Current Pulsed IDP 6.8 *1 A Total Power Dissipation PD 900 *2 mW ESD susceptibility 400 *3 V Channel Temperature TCH +150 °C Storage Temperature Tstg -55~+150 °C

CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : Page No. : 2/7 MTN3418BN3 CYStek Product Specification Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a ceramic board with area measuring 30mm × 30mm × 0.8mm *3. Human body model, 1.5kΩ in series with 100pF Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient Rth,ja 139 °C/W Note : Surface mounted on a ceramic board with area measuring 30mm × 30mm × 0.8mm, 350°C/W when mounted on minimum copper pad. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS* 30 - - V VGS=0, ID=10μA VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±10 μA VGS=±20V , VDS=0 IDSS - - 100 nA VDS=30V , VGS=0 - 290 400 ID=700mA, VGS=10V - 310 450 ID=400mA, VGS=4V - 260 400 ID=170mA, VGS=10V RDS(ON)* - 280 400 mΩ ID=170mA, VGS=4V GFS - 2 - S VDS=10V, ID=700mA Dynamic Ciss - 527 - Coss - 23 - Crss - 16 - pF VDS=10V , VGS=0, f=1MHz td(ON) - 8.8 - tr - 2.6 - td(OFF) - 35.5 - tf - 5.2 - ns VDD=15V , ID=0.7A, VGS=10V , RGEN=50Ω Qg - 3.6 - Qgs - 1.8 - Qgd - 0.3 - nC VDD=10V , ID=1.4A, VGS=10V Source-Drain Diode *VSD - - 1 V VGS=0V , ISD=1A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTN3418BN3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel SA

CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : Page No. : 3/7 MTN3418BN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0123456 Drain-Source Voltage -VDS(V) Drain Current - ID(A) 10V 4.5V 3.5V VGS=3V Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.001 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(mΩ) VGS=3V VGS=4.5V VGS=10V VGS=2.5V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 900 1000 02468 1 0 Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 Reverse Drain Current -IDR(A) Source-Drain Voltage-VSD(V) Tj=25°C Tj=150°C Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) ID=700mA ID=400mA Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 30 35 Drain-Source Voltage -VDS(V) Capacitance---(pF) Coss Ciss Crss Drain-Source On-State Resistance vs Junction Tempearture 100 150 200 250 300 350 400 450 500 550 600 650 700 -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) VGS=10V, ID=170mA VGS=4V, ID=400mA VGS=10V, ID=700mA

CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : Page No. : 4/7 MTN3418BN3 CYStek Product Specification Typical Characteristics(Cont.) Gate Charge Characteristics 01234 Total Gate Charge---Qg(nC) Gate-Source Voltage---VGS(V) ID=1.4A Threshold Voltage vs Junction Tempearture 1.2 1.4 1.6 1.8 2.2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature-Tj(°C) Threshold Voltage-VGS(th)(V) ID=250uA Forward Transfer Admittance vs Drain Current 0.1 1 10 100 1000 10000 Drain Current---ID(mA) Forward Transfer Admittance--- GFS(S) VDS=10V Typical Transfer Characteristics 05 1 0 Gate-Source Voltage-VGS(V) Drain Current -ID(A) VDS=5V Maximum Safe Operating Area 0.01 0.1 0.1 1 10 100 Drain-Source Voltage -VDS(V) Drain Current --- ID(A) Operation in this area is limited by RDS(ON) Ta=25°C, Single pulse, mounted on a ceramic board(900mm²×0.8mm) DC 100m 10m 1ms 100μ Power Derating Curve 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW) Mounted on a ceramic board (900mm²×0.8mm)

CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : Page No. : 5/7 MTN3418BN3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : Page No. : 6/7 MTN3418BN3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) 183°C 60-150 seconds 217°C 60-150 seconds − Time (tL) Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : Page No. : 7/7 MTN3418BN3 CYStek Product Specification SOT-23 Dimension Marking: *:Typical H 0.0004 0.0040 0.01 0.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style : Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 SA Device Code Date Code