MTN2300AN3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Simple drive requirement
  • Small package outline
  • Capable of 2.5V gate drive
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTN2300AN3 SOT-23 G：Gate S：Source D：Drain G S D 39mΩ(typ.) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 2/8 MTN2300AN3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 20 V Gate-Source V oltage VGS ±12 V Continuous Drain Current @VGS=4.5V , TA=25°C (Note 3) 3.6 A Continuous Drain Current @VGS=4.5V , TA=70°C (Note 3) ID 2.9 A Pulsed Drain Current (Notes 1, 2) IDM 10 A PD 1.38 (Note 3) W Maximum Power Dissipation@ TA=25℃ Linear Derating Factor 0.01 W/°C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board, t ≤5s; 270°C/W when mounted on minimum copper pad. Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient, max RθJA 90 °C/W Thermal Resistance, Junction-to-Case, max RθJC 80 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - V VGS=0, ID=250μA ∆BVDSS/∆Tj - 0.1 - V/°C Reference to 25°C, ID=1mA VGS(th) 0.5 0.7 1.2 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±12V , VDS=0 - - 1 μA VDS=20V , VGS=0 IDSS - - 10 μA VDS=20V , VGS=0 (Tj=70°C) - 29 55 ID=3.6A, VGS=4.5V *RDS(ON) - 39 70 mΩ ID=3.1A, VGS=2.5V *GFS - 7.5 - S VDS=5V , ID=3.6A Dynamic Ciss - 440 - Coss - 61 - Crss - 59 - pF VDS=10V , VGS=0, f=1MHz td(ON) - 4.5 - tr - 7.4 - td(OFF) - 19 - tf - 7.2 - ns VDS=10V , ID=3.6A, VGS=5V RG=6Ω, RD=2.8Ω

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 3/8 MTN2300AN3 CYStek Product Specification Qg - 4.4 - Qgs - 0.7 - Qgd - 1.7 - nC VDS=10V , ID=3.6A, VGS=4.5V Source-Drain Diode *VSD - 0.8 1.2 V VGS=0V , IS=1.6A IS - - 1 ISM - - 10 A VD=VG=0V , VS=1.2V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 4/8 MTN2300AN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 0.5 1 1.5 2 2.5 3 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 4.5V 3.5V 2.5V VGS=1.5V VGS=2V Static Drain-Source On-resistance vs Ambient Temperature -60 -20 20 60 100 140 180 TA, Ambient Temperature(°C) RDS(on), Static Drain-Source On-state Resistance(mΩ) ID=3.6A, VGS=4.5V Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 1 10 100 1000 10000 ID, Drain Current(mA) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=1.5V VGS=4.5V VGS=2V VGS=2.5V Forward Drain Current vs Source-Drain Voltage 100 1000 10000 VSD, Source Drain Voltage(V) IF, Forward Drain Current(mA) Tj=25°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 012345 V GS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=3.1A TA=25°C Capacitance vs Reverse Voltage 100 1000 0 2 4 6 8 1 01 21 41 61 82 0 VDS, Drain-to-Source Voltage(V) Capacitance-(pF) Ciss Coss Crss f=1MHz

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 5/8 MTN2300AN3 CYStek Product Specification Typical Characteristics(Cont.) Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) RDS(ON) Limited Ta=25°C, Single pulse, VGS=10V, Tj=150°C DC 100ms 10ms 1ms 100μs Gate Threshold Voltage vs Ambient Temperature 0.2 0.4 0.6 0.8 -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) VGS(th), Gate SourceThreshold Voltage-(V) ID=250μA Gate Charge Characteristics 02468 1 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=10V ID=3.6A Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V Transient Thermal Response Curves 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 6/8 MTN2300AN3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 7/8 MTN2300AN3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 8/8 MTN2300AN3 CYStek Product Specification SOT-23 Dimension *: Typical Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 202A XX Date Code Device Code Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.