MTN22N20J3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTN22N20J3 TO-252 G D S G：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 2/9 MTN22N20J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 200 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C, VGS=10V ID 22 Continuous Drain Current @ TC=100°C, VGS=10V ID 15 Pulsed Drain Current *1 IDM 40 Avalanche Current IAS 20 A Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω EAS 320 Repetitive Avalanche Energy@ L=0.1mH (Note 2) EAR 4.6 mJ Total Power Dissipation @TC=25℃ 107 Total Power Dissipation @TA=25℃ Pd 1.14 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.4 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 200 - - V VGS=0, ID=250μA VGS(th) 2 3 4 V VDS =VGS, ID=250μA IGSS - - ±100 nA VGS=±30, VDS=0 - - 1 VDS =200V , VGS =0 IDSS - - 25 μA VDS =160V , VGS =0, TJ=125°C - 86 115 VGS =10V , ID=11A RDS(ON) *1 - 93 125 mΩ VGS =4.5V , ID=5A GFS *1 - 15 - S VDS =15V , ID=11A Dynamic Qg *1, 2 - 34 - Qgs *1, 2 - 7 - Qgd *1, 2 - 14 - nC VDS=160V , ID=20A, VGS=10V tr *1, 2 - 36 - ns VDS=100V , ID=20A, VGS=10V , RG=25Ω

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 3/9 MTN22N20J3 CYStek Product Specification tf *1, 2 - 60 - Ciss - 1496 - Coss - 154 - Crss - 56 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode IS *1 - - 20 ISM *3 - - 40 A VSD *1 - 0.84 1.3 V IF=IS, VGS=0V trr - 120 - ns Qrr - 400 - nC IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 4/9 MTN22N20J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V 10V,9V,8V,7V,6V VDS, Drain-Source Voltage(V) ID, Drain Current (A) VGS=5V VGS=4V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 02468 1 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=11A RDS(ON)@Tj=25°C : 85mΩ VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=11A

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 5/9 MTN22N20J3 CYStek Product Specification Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=15V Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=20A VDS=160V VDS=100V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=175°C VGS=10V, θJC=1.4°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=1.4°C/W

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 6/9 MTN22N20J3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 1 2 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=20V Power Derating Curve 100 120 0 25 50 75 100 125 150 175 200 T C, Case Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.4°C/W

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 7/9 MTN22N20J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 8/9 MTN22N20J3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Pb-free Assembly Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (Tsmax to Tp) Preheat 100°C 150°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C 200°C −Time(ts min to ts max) 60-120 seconds 60-180 seconds Time maintained above: −Temperature (TL) 183°C 217°C − Time (tL) 60-150 seconds 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 9/9 MTN22N20J3 CYStek Product Specification TO-252 Dimension Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Device Name Date Code 22N20 □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3