MTN18N50CFP CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • Insulating package, front/back side insulating voltage=2500V(AC)
  • RoHS compliant package

Applications

  • Power Factor Correction
  • Flat Panel Power
  • Full and Half Bridge Power Supplies
  • Two-Transistor Forward Power Supplies

Ordering Information

MTN18N50CFP-0-UB-X TO-220FP (RoHS compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 2/8 MTN18N50CFP CYStek Product Specification Symbol Outline MTN18N50CFP TO-220FP Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 500 Gate-Source V oltage VGS ±30 V Continuous Drain Current @TC=25°C, VGS=10V 18* Continuous Drain Current @TC=100°C, VGS=10V ID 11.4* Pulsed Drain Current @ VGS=10V (Note 2) IDM 72* A Single Pulse Avalanche Energy (Note 4) EAS 112 mJ Avalanche Current (Note 2) IAS 18 A Repetitive Avalanche Energy (Note 2) EAR 21 mJ Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ PD 78

0.624 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. IAS=15A, VDD=50V, L=1mH, RG=25Ω, starting TJ=+25℃. 100% tested by condition of L=0.5mH, IAS=8A, VDD=50V , VGS=10V G：Gate D：Drain S：Source G D S

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 3/8 MTN18N50CFP CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 1.6 Thermal Resistance, Junction-to-ambient, max RθJA 62.5 °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 500 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.5 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 24 - S VDS =15V , ID=9A IGSS - - ±100 nA VGS=±30V - - 1 VDS =500V , VGS =0V IDSS - - 25 μA VDS =400V , VGS =0V , Tj=125°C *RDS(ON) - 211 265 mΩ VGS =10V , ID=9A Dynamic *Qg - 70.5 - *Qgs - 13.5 - *Qgd - 20.9 - nC ID=18A, VDD=400V , VGS=10V *td(ON) - 31 - *tr - 61 - *td(OFF) - 239 - *tf - 88 - ns VDD=250V , ID=18A, VGS=10V , RG=25Ω Ciss - 3074 - Coss - 281 - Crss - 48 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 18 *ISM - - 72 A *VSD - 0.84 1.2 V IS=18A, VGS=0V *trr - 350 - ns *Qrr - 4.1 - μC VGS=0V , IF=18A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 4/8 MTN18N50CFP CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 05 0 V DS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V VGS=4V 5.5V 4.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 02468 1 0 Tj=25°C Tj=150°C Drain-Source On-State Resistance vs Junction Tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=9A RDS( ON)@Tj=25°C : 211mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=9A

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 5/8 MTN18N50CFP CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=10V VDS=15V Gate Charge Characteristics 0 1 02 03 04 05 06 07 08 0 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) VDS=400V ID=18A VDS=100V VDS=250V Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10ms 10μs RDS(ON) Limited TC=25°C, Tj=150°C, VGS=10V,RθJC=1.6°C/W, single pulse 100μs 1ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=1.6°C/W

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 6/8 MTN18N50CFP CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V VDS=30V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TC=25°C RθJC=1.6°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.6 °C/W

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 7/8 MTN18N50CFP CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 217°C 60-150 seconds 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C095FP Issued Date : 2017.02.07 Revised Date : Page No. : 8/8 MTN18N50CFP CYStek Product Specification TO-220FP Dimension *Typical A 0.171 0.183 4.35 4.65 G Marking: Date Code Device Name 18N50C Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP 0.246 0.258 6.25 6.55 A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.