MTN138KS3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • Low on-resistance
  • High ESD
  • High speed switching
  • Low-voltage drive
  • Easily designed drive circuits
  • Easy to use in parallel
  • Pb-free package Symbol Outline MTN138KS3 SOT-323 D D G S G G:Gate S:Source S D:Drain

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 2/7 MTN138KS3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDSS 60 V Gate-Source V oltage VGSS ±20 V Continuous ID 220 Drain Current Pulsed IDP 800 *1 Continuous IDR 220 Drain Reverse Current Pulsed IDRP 800 *1 mA Total Power Dissipation PD 200 *2 mW Thermal Resistance, Junction to Ambient RθJA 625 *2 °C/W ESD susceptibility 1500 *3 V Operating Channel Temperature Range TCH -55~+150 Storage Temperature Range Tstg -55~+150 °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a minimum pad size *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS* 60 - - VGS=0, ID=10μA VGS(th) 0.5 1.2 1.5 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±20V , VDS=0 IDSS - - 1 μA VDS=60V , VGS=0 - 1.2 3 ID=220mA, VGS=10V RDS(ON)* - 1.4 3.2 Ω ID=220mA, VGS=4.5V GFS 200 360 - mS VDS=10V, ID=220mA Dynamic Ciss - 29 - Coss - 4 - Crss - 2.8 - pF VDS=25V , VGS=0, f=1MHz td(ON) - 3 - tr - 5 - td(OFF) - 14 - tf - 9 - ns VDS=30V , ID=200mA, VGS=10V , RG=6Ω Qg - 1.1 - Qgs - 0.1 - Qgd - 0.23 - nC VDS=30V , ID=200mA, VGS=10V Source-Drain Diode *VSD - 0.8 1.2 V VGS=0V , IS=200mA *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 3/7 MTN138KS3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0123456 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 3.5V VGS=2V 2.5V Typical Transfer Characteristics 0.2 0.4 0.6 0.8 1.2 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) VGS=1.8V VGS=2.5V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=125°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) ID=100mA Drain-Source On-State Resistance vs Junction Tempearture -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) Static Drain-Source On-State Resistance-RDS(ON)(Ω) VGS=10V, ID=100mA

CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 4/7 MTN138KS3 CYStek Product Specification Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) VGS(th), NormalizedThreshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=3V VDS=10V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 5/7 MTN138KS3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 6/7 MTN138KS3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) 183°C 60-150 seconds 217°C 60-150 seconds − Time (tL) Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 7/7 MTN138KS3 CYStek Product Specification SOT-323 Dimension Marking: TE Date Code KN XX Device Code Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 D 2.000 2.200 0.079 0.087 θ 0° 8° 0° 8° E 1.150 1.350 0.045 0.053 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.