MTN127KN3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Lower gate charge
  • ESD protected gate
  • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTN127KN3 SOT-23 D S G：Gate S：Source D：Drain G RDSON(TYP)@VGS=10V , ID=16mA 165Ω RDSON(TYP)@VGS=4.5V , ID=16mA 166Ω Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 2/9 MTN127KN3 CYStek Product Specification Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 600 Gate-Source V oltage VGS ±16 V TA=25°C, VGS=10V 33 Continuous Drain Current TA=70°C, VGS=10V ID 26 Pulsed Drain Current IDM 132 (Note 1 & 2) mA TA=25°C 0.5 (Note 3) Power Dissipation TA=70°C PD 0.32 (Note 3) W Operating Junction and Storage Temperature Tj, Tstg -55 ~ +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance, Junction to Ambient , max RθJA 250 *3 Thermal Resistance, Junction to Case, max RθJC 60 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1%. 3. Surface mounted on min. copper pad. Electrical Characteristics (TA=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 600 - - VGS=0V , ID=250μA VGS(th) 1.5 - 3 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±16V , VDS=0V - - 1 VDS=600V , VGS=0V IDSS - - 10 μA VDS=600V , VGS=0V , Tj=55°C - 165 250 ID=16mA, VGS=10V *RDS(ON) - 166 260 Ω ID=16mA, VGS=4.5V *GFS - 57 - mS VDS=40V , ID=10mA Dynamic Ciss - 21.4 32 Coss - 2.7 4 Crss - 2.5 3.8 pF VDS=25V , VGS=0V , f=1MHz *td(ON) - 7.8 12 *tr - 22 33 *td(OFF) - 18.4 27.6 *tf - 92.8 139.2 ns VDS=300V , ID=10mA,VGS=10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 3/9 MTN127KN3 CYStek Product Specification *Qg - 1.6 2.4 *Qgs - 0.5 0.8 *Qgd - 0.6 0.9 nC VDS=300V , ID=10mA, VGS=10V Source-Drain Diode IS - - 33 ISM - - 132 mA VSD - 0.75 1 V IS=16mA, VGS=0V trr - 210 315 ns Qrr - 20 30 nC IF=16mA, dIF/dt=100A/μs Pulse test : Pulse width≤300μs, Duty cycle≤2% Independent of operating temperature Pulse width limited by maximum junction temperature Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 4/9 MTN127KN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 0 2 4 6 8 10 12 14 16 18 20 VDS, Drain-Source Voltage(V) ID, Drain Current(mA) VGS=3V 10V , 9V , 8V , 7V , 6V , 5V, 4.5V, 4V, 3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) 4.5V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 150 180 210 240 270 300 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=16mA RDSON@Tj=25°C : 165Ω typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(Ω) ID=16mA

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 5/9 MTN127KN3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 100 1000 0.001 0.01 0.1 ID, Drain Current(A) GFS, Forward Transfer Admittance(mS) Pulsed Ta=25°C VDS=40V Gate Charge Characteristics Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=300V ID=10mA Maximum Safe Operating Area 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms TA=25°C, Tj=150°,VGS=10V RθJA=250°C/W, Single Pulse 100μs Maximum Drain Current vs Jnuction Temperature 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, Tj=150°C, VGS=10V, RθJA=250°C/W

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 6/9 MTN127KN3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0.02 0.04 0.06 0.08 0.1 0.12 0123456789 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Power Derating Curve 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 TA, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with minimum pad area Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=250°C/W

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 7/9 MTN127KN3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 8/9 MTN127KN3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 9/9 MTN127KN3 CYStek Product Specification SOT-23 Dimension Marking: *: Typical DIM Inches Millimeters Inches Millimeters H 0.0000 0.0040 0.00 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. TE H JKD A L GV C B S Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 127K XX Date Code