MTN10N65CE3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package

Applications

  • Open Framed Power Supply
  • Adapter
  • STB

Ordering Information

(RoHS compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 2/10 MTN10N65CE3 CYStek Product Specification Symbol Outline MTN10N65CE3 TO-220 G D S G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 650 Gate-Source V oltage VGS ±30 V Continuous Drain Current @VGS=10V , TC=25°C 10* Continuous Drain Current @VGS=10V , TC=100°C ID 6.3* Pulsed Drain Current @ VGS=10V (Note 1) IDM 40* Avalanche Current (Note 1) IAS 10 A Single Pulse Avalanche Energy (Note 2) EAS 215 Repetitive Avalanche Energy (Note 1) EAR 6 mJ Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor PD 185

1.48 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1.Pulse width limited by maximum junction temperature. 2. IAS=10A, VDD=50V, L=4.3mH, RG=25Ω, starting TJ=+25℃. 100% tested by conditions of L=4.3mH, IAS=6A, VGS=10V , VDD=50V

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 3/10 MTN10N65CE3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 0.68 Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 650 - - V VGS=0V , ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.7 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 15 - S VDS =15V , ID=6A IGSS - - ±100 nA VGS=±30V - - 1 VDS =650V , VGS =0V IDSS - - 10 μA VDS =520V , VGS =0V , Tj=125°C *RDS(ON) - 0.55 0.75 Ω VGS =10V , ID=6A Dynamic *Qg - 40.6 - *Qgs - 9.9 - *Qgd - 11.2 - nC ID=10A, VDD=520V , VGS=10V *td(ON) - 20.6 - *tr - 33.4 - *td(OFF) - 56 - *tf - 49.4 - ns VDD=325V , ID=10A, VGS=10V , RG=9.1Ω Ciss - 1942 - Coss - 157 - Crss - 22 - pF VGS=0V , VDS=25V , f=1MHz Rg - 2.8 - Ω f=1MHz Source-Drain Diode *VSD - 0.8 1.5 V IS=6A, VGS=0V *IS - - 10 *ISM - - 40 A *trr - 422 - ns *Qrr - 4.0 - μC VGS=0V , IF=10A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 4/10 MTN10N65CE3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 0 5 0 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 T A, Ambient Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V VDS, Drain-Source Voltage(V) ID, Drain Current(A) 5.5V ID=250μA, VGS=0V VGS=5V Static Drain-Source On-State resistance vs Drain Current 100 200 300 400 500 600 700 800 900 1000 0.01 0.1 1 10 100 I D, Drain Current(A) RDS(ON) , Static Drain-Source On- State Resistance(mΩ) VGS=10V Drain Current vs Gate-Source Voltage 02468 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current(A) Ta=25°C VDS=30V Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 400 600 800 1000 1200 1400 1600 1800 2000 02468 1 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VDS=10V ID=6A Ta=25°C Forward Drain Current vs Source-Drain Voltage 0.001 0.01 0.1 100 VSD, Source Drain Voltage(V) IF, Forward Current(A) VGS=0V Ta=150°C Ta=25°C

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 5/10 MTN10N65CE3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Capacitance(pF) Ciss Coss Crss f=1MHz Static Drain-Source On-resistance vs Ambient Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) RDS(ON), Normalized Static Drain-Source On-state Resistance ID=6A, VGS=10V RDS( ON)@Tj=25°C:0.55Ω typ. Maximum Safe Operating Area 0.01 0.1 100 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) RDS( ON) Limited DC 10μs TC=25°C, Tj(max)=150°C VGS=10V, RθJC=0.68°C/W Single pulse 100ms 10ms 1ms 100μs Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 45 50 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=10A VDS=130V VDS=325V VDS=520V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=0.68°C/W Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 6/10 MTN10N65CE3 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=0.68°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=15V Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.68 °C/W

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 7/10 MTN10N65CE3 CYStek Product Specification Test Circuits and Waveforms

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 8/10 MTN10N65CE3 CYStek Product Specification Test Circuits and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 9/10 MTN10N65CE3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C077E3 Issued Date : 2016.03.18 Revised Date : Page No. : 10/10 MTN10N65CE3 CYStek Product Specification TO-220 Dimension Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Device Name Date Code 1 2 3 CYS 10N65C □□□□ *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.