MTN10N60DFP CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • Insulating package, front/back side insulating voltage=2500V(AC)
  • RoHS compliant package

Applications

  • Power Factor Correction
  • LCD TV Power
  • Full and Half Bridge Power

Ordering Information

MTN10N60DFP-0-UB-S TO-220FP (RoHS compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 2/ 10 MTN10N60DFP CYStek Product Specification Symbol Outline MTN10N60DFP TO-220FP G D S G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 600 Gate-Source V oltage VGS ±30 V Continuous Drain Current @VGS=10V , TC=25°C 10* Continuous Drain Current @VGS=10V , TC=100°C ID 6.3* Pulsed Drain Current @ VGS=10V (Note 2) IDM 40* Single Pulse Avalanche Current @ L=0.1mH IAS 10 A Single Pulse Avalanche Energy @ L=5mH, ID=7 Amps, VDD=50V (Note 3) EAS 122.5 Repetitive Avalanche Energy (Note 2) EAR 5 mJ Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL 300 Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG 260 W Total Power Dissipation (TC=25℃) Linear Derating Factor Pd 50

0.4 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Pulse width limited by maximum junction temperature. 3.100% tested by conditions of L=5mH, IAS=5A, VGS=10V, VDD=50V.

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 3/ 10 MTN10N60DFP CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.5 Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 600 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.7 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 13 - S VDS =15V , ID=5A IGSS - - ±100 nA VGS=±30V IDSS - - 1 VDS =600V , VGS =0V IDSS - - 10 μA VDS =480V , VGS =0V , Tj=125°C *RDS(ON) - 0.61 0.77 Ω VGS =10V , ID=6A Dynamic *Qg - 38.2 - *Qgs - 7.1 - *Qgd - 13.6 - nC ID=10A, VDD=300V , VGS=10V *td(ON) - 16.6 - *tr - 11.4 - *td(OFF) - 76.8 - *tf - 18.8 - ns VDD=300V , ID=10A, VGS=10V , RG=9.1Ω Ciss - 1386 - Coss - 147 - Crss - 53 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *VSD - - 1.5 V IS=10A, VGS=0V *IS - - 10 *ISM - - 40 A *trr - 422 633 ns *Qrr - 3.6 5.4 μC VGS=0V , IF=10A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 4/ 10 MTN10N60DFP CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 0 5 0 Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V 10V,9V,8V,7V,6V,5.5V VDS, Drain-Source Voltage(V) ID, Drain Current(A) 4.5V VGS=4V Static Drain-Source On-State resistance vs Drain Current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100 I D, Drain Current(A) RDS(ON) , Static Drain-Source On- State Resistance(Ω) VGS=10V Drain Current vs Gate-Source Voltage 02468 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current(A) Ta=25°C VDS=30V VDS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Forward Drain Current vs Source-Drain Voltage 0.001 0.01 0.1 100 VSD, Source Drain Voltage(V) IF, Forward Current(A) VGS=0V Ta=25°CTa=150°C VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(Ω) ID=6A Ta=25°C

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 5/ 10 MTN10N60DFP CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Capacitance(pF) Ciss Coss Crssf=1MHz Static Drain-Source On-resistance vs Ambient Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) RDS(ON), Normalized Static Drain-Source On-state Resistance ID=6A, VGS=10V Maximum Safe Operating Area 0.01 0.1 100 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) RDS( ON) Limited DC 10μs TC=25°C, Tj(max)=150°C VGS=10V, RθJC=2.5°C/W Single pulse 100ms 10ms 1ms 100μs Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 45 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=10A VDS=120V VDS=300V VDS=480V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=2.5°C/W Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 6/ 10 MTN10N60DFP CYStek Product Specification Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=15V Single Pulse Power Rating, Junction to Case 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.5°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 7/ 10 MTN10N60DFP CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 8/ 10 MTN10N60DFP CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 9/ 10 MTN10N60DFP CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C116FP Issued Date : 2015.12.27 Revised Date : 2016.01.15 Page No. : 10/ 10 MTN10N60DFP CYStek Product Specification TO-220FP Dimension *Typical Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. DIM Min. Max. Min. Max. A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style: Pin 1.Gate 2.Drain 3.Source Date Code Marking: Device Name 3-Lead TO-220FP Plastic Package CYStek Package Code: FP