MTM2N50 NJSEMI | Alldatasheet

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^EmL-dontiuatoi ZPioaucti, LJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, con- verters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100'C
  • Designer's Data — IDSS< vDS(on). Vcs(th) and SOA Specified at Elevated Temperature
  • Rugged — SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS MTM2N50 TMOS POWER FET

2 AMPERES

RDS(on) = 4 OHMS

500 VOLTS

(«GS = 1 Mftl Gate-Source Voltage — Continuous — Non-repetitive (tp * 50 ins) Drain Current Continuous Pulsed Total Power Dissipation @ TQ = 25°C Derate above 25"C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 500 500 ±20 ±40 0.6 -65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes. 1/8" from case for 5 seconds "we R0JA TL 1.67 300 °c/w TO-204AA NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. Ounlitv

ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) MTP2N45 MTM/MTP2N50 Zero Gate Voltage Drain Current (vDs = Rated VDSS- VGS = 0) (VDS = 0.8 Rated VDSS- VQS = °- TJ = 125°c> Gate-Body Leakage Current, Forward (VQSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VQSR = 20 Vdc, VDS ** 0) V(BR]DSS IDSS IGSSF IGSSR 450 500 0.2 100 100 Vdc mAdc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGs- 'D = 1 rnA) Tj = 100°C Static Drain Source On-Resistance (VGS = 10 Vdc, ID - 1 Adc) Drain-Source On-Voltage (VQS = 10 V) (|Q = 2 Adc) dO - 1 Adc. Tj = 100°CI Forward Transconductance (VDS ** 15 V. ID = 1 A) VGStth) RDS(on) vDS(on) 9FS 1.5 4.5 Vdc Ohms Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS - 25 v, VGS - o. f = 1 MHz) See Figure 1 1 ciss Coss Crss 500 100 pF SWITCHING CHARACTERISTICS* (Tj = 100X1 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge <VDD = 25 v, ID = 0.5 Rated ID Rgen " 50 ohms) See Figures 9, 13 and 14 (VDS = 0-8 Rated VDSS. ID = Rated ID. VGS = 10 V) See Figure 12 td(on) tr td(off) tf Qg Qgs Qgd 17 (Typ) 9 (Typ) 8 (Typ) ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = Rated ID VGS = Ol VSD ton 'rr 1 (Typ) 1.5 Vdc Limited by stray inductance 200 (Typ) ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25" from the package to the source bond pad) Ld U

5 ITyp)

12.5 (Typ) nH

  • Pulse Test: Pulse Width f 300 ILS, Duty Cycle * 2%