MTM25N10 NJSEMI | Alldatasheet

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i, IJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TWOS Power FET is designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
  • Designer's Data — IDSS. VDS(OO). vGS|th) a"d SOA Specified at Elevated Temperature
  • Rugged — SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS MTM25N10 TMOS TMOS POWER FET

25 AMPERES

ROS(on) = a-"* OHM

100 VOLTS

Drain-Gate Voltage IRQS " 1 Mn) Gate-Source Voltage Continuous Non-repetitive (tp «. 50 us) Drain Current — Continuous — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID 'DM PD TJ' Tstg Value 100 100 ^20 ±40 105 ISO 1.2 -66 to 160 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/S" from case for 5 seconds R»JC RUJA TL 0.83 300 "CAM TO-204AE ELECTRICAL CHARACTERISTICS — (Tc = 2S°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0-25 mA) Zero Gate Voltage Drain Current <VDS = Rated Vpss. VQS = 0) (Vos = Rated VDSs. VGS = 0. Tj = 125°C) Gate-Body Leekage Current, Forward (VGSF = 20 vdc, VDS - o> Gate-Body Leakage Current, Reverse (VQSR - 20 vdc, VDS = o> V(BR)DSS IDSS ]GSSF IGSSR 100 100 100 100 Vdc ItMc nAdc nAdc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Oiinlifv

ELECTRICAL CHARACTERISTICS — continued (Tc - 25"C unless otherwise noted) Characteristic Symbol Win Max Unit ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS. 'D = 1 m*i Tj = 100°C Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12.5 Adc) Drain-Source On-Voltage (VQS = 10 V) (ID = 25 Adc| (ID =• 12.5 Adc, Tj = 100-C) Forward Transconductance (Vos = 10 V, ID = 12.5 A) VQS(th) "DS(on) VDSIonl 9FS 1 5 4.5 0.075 2.25 1.8 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance <VDS - 25 v, VGS - o f - 1 MHz) See Figure 11 ciss Coss Crss 2000 1500 400 pF SWITCHING CHARACTERISTICS* (Tj = 100°C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 25 V, ID = 0.5 Rated ID Rgen = 50 ohms) See Figures 9, 13 and 14 (VDS - 0-8 Rated VDSS, ID = Rated ID, VGS = 10 V) See Figure 12 td(on) td(off) tf 09S Ogd 29 (Typ) 23 (Typ) 6 (Typ) 450 150 300 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time dS = Rated ID VGS = o) VSD *on trr 1.5 (Typ) 1.8 Vdc Limited by stray inductance 450 (Typ) ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25" from the package to the source bond pad) Ld Ls 5 (Typ) 12.5 (Typ) ~"- nH