MTM231230L PANASONIC | Alldatasheet
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Absolute Maximum Ratings Ta = 25 C Note *1 Pulse width 10 s, Duty cycle 1 % *2 Measuring on ceramic board at 40 mm 38 mm 0.1 mm. Absolute maximum rating PD Non-heat sink shall be made 150 mW. Page 150 Parameter -16 500 VDS -20 Gate to Source Voltage VGS 10 MTM231232LBF Silicon P-channel MOSFET Features For Switching Low Drain-source On-state Resistance : RDS(on) typ. = 40 m (VGS = -4 V) MTM76123 in SMini3 type package 1o f6 Unit : mm 2. Source SMini3-G1-B SC-70 Code JEITA Gate Halogen-free / RoHS compliant Marking Symbol :BL Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) Channel Temperature Tch Storage Temperature Range -55 to +150 mW Internal ConnectionA Gate 2. Source 3. Drain Pin Name SOT-323 Panasonic 3. Drain Drain Current ID IDpDrain Current (Pulsed) *1 Tstg Total Power Dissipation *2 PD V V A Low Drive Voltage : 2.5 V Drive Symbol Rating Unit Drain to Source Voltage Ｓ Ｄ Ｇ1 2 2.1 2.0 0.9 1.25 1.3 0.3 (0.65) 0.15 (0.65) Doc No. TT4-EA-14177 Revision. Established 2012-04-21 Revised 2013-03-07
Electrical Characteristics Ta = 25 C 3 C Note： Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Pulse test : Pulse width 300 s, Duty cycle 2 % *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Page Fall Time *2 tf 70 Turn-off Delay Time *2 td(off) 120 VDD = -10 V, VGS = -4 to 0 V ID = -1 A Turn-on Delay Time *2 td(on) 25 VDD = -10 V, VGS = 0 to -4 V ID = -1 ARise Time *2 tr 25 Zero Gate Voltage Drain Current IDSS Gate-source Threshold Voltage Vth ID = -1 mA, VDS = -10 V Drain-source On-state Resistance *1 40 Gate-source Leakage Current IGSS VGS = 8 V, VDS = 0 V V -1 VDS = -20 V, VGS = 0 V A VDSS ID = -1 mA, VGS = 0 V -20 Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage RDS(on)2 ID = -0.5 A, VGS = -2.5 V 2o f 70 m Crss 120 RDS(on)1 -0.4 ID = -1 A, VGS = -4 V 3.5 10 -0.85 -1.3 Input Capacitance Ciss VDS = -10 V, VGS = 0 V f = 1 MHz Forward transfer admittance *1 Output Capacitance Coss |Yfs| ID = -1 A, VDS = -10 V, f = 1 kHz Reverse Transfer Capacitance 1 000 120 ns ns S pF V Doc No. TT4-EA-14177 Revision. Established 2012-04-21 Revised 2013-03-07
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Page 3 of 6 90 % 10 % 10 % 90 % 0 V -4 V PW = 10 s D.C. 1 % VDD = -10 V ID = -1 A RL = 10 Doc No. TT4-EA-14177 Revision. Established 2012-04-21 Revised 2013-03-07
Technical Data ( reference ) Page Dynamic Input/Output Characteristics 4o f6 Capacitance - VDS ID - VDS ID - VGS VDS - VGS RDS(on) - ID -0.01 -0.008 -0.006 -0.004 -0.002 Gate-source Voltage VGS (V) Drain Current ID (A) Ta = 85 C -30 C 25 C -10 0 5 10 15 20 25 30 Total Gate Charge Qg (nC) Gate-source Voltage VGS (V) VDD = -10 V -0.5 -0.4 -0.3 -0.2 -0.1 -6-5-4-3-2-10 Gate-source Voltage VGS (V) Drain-source Voltage VDS (V) ID = -2 A -1 A -0.5 A 100 -0.1 -1 Drain Current ID (A) Drain-source On-state Resistance RDS(on) (m) -4 V VGS = -2.5 V -2.5 -1.5 -0.5 Drain-source Voltage VDS (V) Drain Current ID (A) -1.5 V -2 V -2.5 V -4 V VGS = -1 V 100 1000 10000 -0.1 -1 -10 -100 Drain-source voltage VDS (V) Capacitance C (pF) Ciss Coss Crss Doc No. TT4-EA-14177 Revision. Established 2012-04-21 Revised 2013-03-07
Technical Data ( reference ) Page 5 of Rth - tsw Vth - Ta RDS(on) - Ta PD - Ta Safe Operating Area -0.5 -50 0 50 100 150 Temperature Ta (C) Gate-source Threshold Voltage Vth (V) 0 -50 0 50 100 150 Temperature Ta (C) Drain-source On-state Resistance RDS(on) (m) -4 V VGS = -2.5 V 0.2 0.4 0.6 0.8 0 50 100 150 Temperature Ta (C) Total Power Dissipation PD (W) Measuring on ceramic substrate at (40 mm 38 mm 0.1 mm) Non-heat sink 100 1000 0.1 1 10 100 1000 Pulse Width tsw (s) Thermal resistance Rth (C/W) -0.001 -0.01 -0.1 -10 -100 Drain-source voltage VDS (V) Drain Current ID (A) IDp = -16 A Operation in this area is limited by RDS(on) Ta = 25 C, Glass epoxy board (25.4 25.4 0.8 mm) coated with copper foil,which has more than 300 mm2. 10 ms 100 ms 1 ms 1 s DC Doc No. TT4-EA-14177 Revision. Established 2012-04-21 Revised 2013-03-07
Unit : mm Page 6 SMini3-G1-B 6o f Land Pattern (Reference) (Unit : mm) 0.8 0.9 1.9 1.3 0.3 +0.1 0.0 2.1±0.1 1.25±0.10 0.15 +0.10 -0.05 0 to 0.1 1.3±0.1 2.0±0.2 (0.425) (0.65) (0.65) 0.2±0.1 0.9 +0.2 -0.1 0.9±0.1 (8°) (10°) Doc No. TT4-EA-14177 Revision. Established 2012-04-21 Revised 2013-03-07
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