MTM20P10 NJSEMI | Alldatasheet
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<~>£,tnL-(-onaiictoi £/-\\ Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
- Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
- Designer's Data — IDSS- vDS(on)- VQS(th) and SOA sPecified at Elevated Temperature
- Rugged — SOA is Power Dissipation Limited
- Source-to-Dram Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS MTM20P10 TMQS TMOS POWER FET
20 AMPERES
RDS(on)= 0.15 OHM
100 VOLTS
(RGS = 1 M«) Gate-Source Voltage Continuous Non-repetitive (tp *", 50 MS) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID 'DM PD Tj- Tsfg Vilira 100 100 ±20 ±40 125 -65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts WVC THERMAL CHARACTERISTICS TO-204AA Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds «SE TL i 300
- c/w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic Symbol Mln Max Unit OFF CHARACTERISTICS Dram-Source Breakdown Voltage (VGS - 0, ID - 0.25 mA) Zero Gate Voltage Drain Current (VDS - Rated VDSS- VGS = 0) (VDS = Rated VDSS' VGS - °. TJ = 125°C) Gate- Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current. Reverse (VQSH = 20 Vdc, VDS = 0) V(BR)DSS toss 'GSSF IGSSR 100 100 100 100 Vdc liMc nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS- ID - 1 mA) Tj - 100°C Static Dram-Source On-Resistance IVGS = 10 Vdc, ID = lOAdc) Drain-Source On-Vortage (VGS = 10 V] (ID = 20 Adc) (ID = 10 Adc, Tj = 100*C) Forward Tranaconductance (VDs = iov, ID = 10 A) vGS(th) "DSIonl vDS(on) 9FS 1.5 4.5 A 0.15 3.2 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance {VDS = 25 v, VQS - o. f = 1 MHz) See Figure 10 ci$s CDSS Cr6S 2000 950 400 PF SWITCHING CHARACTERISTICS' (Tj = 1QQ-Q Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD - 25 V, ID = 0.5 Rated ID Sea Figures 12 and 13 (VDS ~ °-8 Rated VDSS> ID = Rated ID, VGS - 10 v) See Figure 1 1 'd(on) tr td(off) tf Qfl Q«S Qgd 52 (Typ) 22 (Typ) 30 (Typ) 200 150 150 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time dS = Rated ID Vnc - 0) VSD 'on «rr 2.8 (Typ) 100 (Typ) 350 (Typ) Vdc ns ns
- Pulse Ten: Pulss Width « 300 ^s. Duty Cycle s 10%.