MTM15N35 NJSEMI | Alldatasheet
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, U na. MAXIMUM RATINGS MTIYI15N35 MTIYI15N40 Retlng Drain-Source Voltege Drain-Gate Voltage <RGS - i.o MID Gate-Source Voltage Drain Current Continuous Pulled Gate Current — Pulsed Total Power Dissipation @ TC - 25'C Derate above 25°C Operating and Storage Temperature Range Symbol voss VDGR VGS ID 'DM 'CM PD TJ.T«Q MTM1SN35 350 350 MTM15N40 400 400 ±20 1.5 250 2.0 -65 to 150 Unit Vdc Vdc Vdc Adc Adc Watta W/°C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Maximum Lead Temp, for Soldering Purposes, 1/8* from case for 5 seconds R«JC TL 0.5 275 °c/w _ ELECTRICAL CHARACTERISTICS <TC = 25°C unless otherwise noted) Characteristic | Symbol MTM15N35 MTM1GN40 c M— '' '— i : i. /•»• • Q-^ S <i ^\\ Yh V^ M W . I rj . STYLE 3: PIN 1 . GATE 2. SOURCE CASE. DRAIN Mltlll ETIBS IMHES DIM MM MM M» MAX A 31.35 31.37 t.51 1.550 1 f 2TT i .' ! , t L . Ji ..: . t . ? . 1.177 I i 1 . t . 0.420 .440 _l_ JtH JJJi a™ °P« J i 1: .1 i .' -H n:3I^S^ R ii | Mln | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage * (VGS = 0. ID = 5.0 mA) MTM15N35 MTM15N40 Zero Gate Voltage Drain Current (VOS - 0.86 Rated Voss. VQS = 0) Tj= 100°C Gate-Body Leakage Current (VGS = 20 Vdc. VQS ' 0) V(BR)DSS 'DSS 'GSS 350 400 0.25 2.5 500 Vdc mAdc nAdc ON CHARACTERISTICS' Gate Threshold Voltage (lD= 1 0 mA. VDS * VGS) Tj= 100°C Drain-Source On-Voltage (VQS = 10 V| (ID=7.5 Adcl (![)• 15 Adcl (10= 7.6 Adc. Tj= 100°C) Static Drain-Source On-Resistance (VGS= 10 Vdc. ID =7. 5 Adcl Forward Transconductance |VDS= 15 V, ID= 7.5 A) vGS(th) vDS(on) 'DSIonl 9fs 2.0 1.5 6.0 4.5 4.0 2.25 6.0 4.5 0.3 Vdc Vdc Ohms mhos SAFE OPERATING AREAS Forward Biased Safe Operating Area Switching Safe Operating Area FBSOA SSOA See Figure 9 See Figure 10 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss coss C,ss 3600 700 300 pF pF pF SWITCHING CHARACTERISTICS' (Tj = 100°C> Turn-On Delay Time Rise Time Turn-Off Delay Time Fait Time <VDS= 125V. ID =7.5 A. "gen = 50 ohms) 'd(on) tr 'd(off) If 120 300 400 240 ns ns ns ns SOURCE DRAIN DIODE CHARACTERISTICS' Characteristic Forward On-Voltage Forward Turn-On Time Reverse Recovery Time IS = 15 A vGS = o Symbol vSD 'on 'rr Typ 1.0 175 600 Unit Vdc ns ns uli. Ten PulM Width -,,.300 „>. Duly Cycl« Quality Semi-Conductors