MTM15N20 NJSEMI | Alldatasheet
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-Conduakoi ZPioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM15N20 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TO218AC MAXIMUM RATINGS Drain-Source Voltage Drain-Gale Voltage (RQS ' 1 Mil) Gate-Source Voltage Continuous Non-repetitive (tp * 50 >/sl Drain Current — Continuous - Pulsed Total Power Dissipation &> TC = 25°C Derate above 25°C Operating and Storage Temperature Range VDSS VDGR VGS VGSM ID IDM PD TJ, TS|B MTH or MTM 1SN20 200 200 t20 ±40 150 1.2 - 6510 150 Vdc Vdc Vdc Vpk Adc Watts W/"C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds "we RftJA TL 0.83 275 "C/W ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted) Characteristic Symbol Mln Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS - 0, ID = 0.25 mA| MTH1SN20, MTM15N20 Zero Gate Voltage Drain Current (VDS - Rated VDSS, VGs - "1 (Tj = 125°C> Gate-Body Leakage Current. Forward <vGSF - 20 Vdc, VDS - 01 Gate Body Leakage Current. Reverse <VGSR = zo Vdc. VDS = ") VIBRIOSS 'DSS IGSSF IGSSR 200 100 100 100 Vdc /iAdc nAdc nAdc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.f Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Oiinlitv
ELECTRICAL CHARACTERISTICS — continued ITC - 25'C unlm otherwise noted) Characteristic Symbol | M4n Max Unit ON CHARACTERISTICS' Gate Threshold Voltage (vDs = VGS. ID = 1 ^AI Tj = 100'C Static Drain-Source On Resistance (VGS = '° v<lc- 'D = 75 Adc) Drain-Source On-Voltags (VQS = '0 V) (ID - 15 Adc) (ID = 7.5 Adc, Tj = 100°CI Forward Transconductance (Vrjs = 15 V, ID = 75 A) vGS(th) 'DS(on) vDS(on) 9FS 1.5 4.5 0.16 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance |VDS = 25 V, VGs = 0. f = 1 MHz) Ciss GOSS Crss 2000 700 200 pF SWITCHING CHARACTERISTICS* ITj = 100 C) Turn-On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD " 25 V, Irj = 0.5 Rated ID Rgen = 5" ohms) See Figures 13 and 14 (vDs - «•« Rated VDSS- ID - Rated ID. VQS = 10 V) See Figure 12 >d(on) tr td(off) tf Qg Qgs Qgd 60 (Typ) 35 (Typ) 25 (Typ) 300 220 250 ns nC SOURCE DRAIN DIODE CHARACTERISTICS' Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (Is - Rated IQ VGS = 01 VSD 'on trr 1.5(Typl 2.1 Vdc Limited by stray inductance 450 (Typ) ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Maasured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance IMtHurad from the source pin, 0.25' from the package to the source bond pad) Ld LS 5 (Typ) 12.6 (Typl nH INTERNAL PACKAGE INDUCTANCE (TO 218) Internal Drain Inductance (Measured from screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to center of die) Ld 4 (Typ) 5 (Typ) 10 (Typ) nH
- Pulut I.it: Put» Width f 300 /it. Duty Cycle ? 2%