MTM6N60 NJSEMI | Alldatasheet

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du.(itoi ^Products., Qna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

  • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
  • Designer's Data — IDSS- vDS(on)' VQS(th) and SOA Specified at Elevated Temperature
  • Rugged — SOA is Power Dissipation Limited
  • Source to-Draln Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RQS - 1 Mn) Gate-Source Voltage Continuous Non-repetitive (tp < GO ps) Drain Current Continuous Pulsed Total Powsr Dissipation @ TC = 25'C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD Tj. Tstg MTH6N55 650 550 MTHSN60 MTM6N60 600 600 ±20 ±40 150 1.2 -66 to 160 Unit Vdc Vdc Vdc Vpk Adc Watts W/-C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Cage — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from caae for 6 seconds RflJC RSJA TL 275
  • c/w ELECTRICAL CHARACTERISTICS |TC - 25'C unless otherwise noted) Characteristic Symbol Mln Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS - 0, ID = 0.25 mA) MTH6N55 MTH6N60, MTM6N60 Zero Gate Voltage Drain Current (VOS = Rated VDSS. VGS = 0) (VDS - °-8 Ra|stl VDSS' VQS = °. TJ = "5-o VIBRIDSS bss 550 eoo 0.2 Vdc mAdc MTH6N55 MTH6N60 MTM6N60 TMOS POWER FETs

6 AMPERES

'DS(on) = 1-2 OHMS 550 and 600 VOLTS MTM6N60 TO-204AA NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

MTH/MTM6N55, 60 ELECTRICAL CHARACTERISTICS — continued |TC - 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Gate-Body Leakage Current, Forward (vGSF = 20 Vdc, vDs - o) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, vDs = 01 'GSSF IGSSR Win Max Unit 100 100 nAdc nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS - VGS. ID • ' nvy Tj = 100'C Static Drain-Source On-Resistance (VGS - 10 Vdc, ID ™ 3 Adc) Drain-Source On-Voltage (VGS "10V) (ID - 6 Adc) (ID = 3 Adc, Tj = 100°C) Forward Transconductance (VDS - 15V, IQ - 3A) VGS(th) 'DS(on) VDS(on) 9FS 1.5 4.5 1.2 7.2 Vdc Ohms Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS - 26 v, VQS = o. f - 1 MHz) See Figure 11 Ciss COBS Cr« - | 1800 350 150 pF SWITCHING CHARACTERISTICS* (Tj - 100°CI Turn-On Delay Time Rise Time Turn-Off Delay Time Fail Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Vot) = 25 V, ID - 0.6 Rated ID Rgen " 60 ohms) See Figures 13 and 14 (VDS - 0-8 Rated VDSS. ID - Rated ID, VQS - 10 V) See Figure 12 'd(on) tr td(off) Qo Q9s Ogd 66 (Typ) 2B fTyp) 30 (Typ) 160 200 120 ns nC SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = Rated ID VQS - 0) VSD Ion 'rr 1 (Typ) 1.4 Vdc Limited by stray inductance 600 (Typ) ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25' from the package to the source bond pan) Ld 5 (Typ) 12.6 (Typl nH INTERNAL PACKAGE INDUCTANCE (TO-218) Internal Drain Inductance (Measured from screw on tab to center of die) (Measured from the drain lead 0.26" from package to center of die) Internal Source Inductance (Measured from the source lead 0,25" from package to center of die) Ld 4 (Typ) 6 (Typ) 10 (Typ) nH

  • Pulse Test: Pulse Width « 300 ia. Duty Cycle « 2%.