MTH25P05 NJSEMI | Alldatasheet
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^SemL-donductoi LPioducta, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MTH25P05 MTH25P06 MAXIMUM RATINGS Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS THERMAL CHARACTERISTICS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 Ml!) Gate-Source Voltage — Continuous — Non-repetitive (tp =^ 50 ^ts) Drain Current Continuous Pulsed Total Power Dissipation fa TC - 2S°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ. Tstg 25PO6 SO 25P06 ±20 = 40 100 125 -65to ISO Unit Vdc Vdc Vdc Vpk Adc Watts W"C Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds RSUC RWA TL 275 °C/W TO-218AC NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Ch.racteristic Symbol Min Mw Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS - 0, ID =* 0.25 mA) MTH25P05, MTH25P06, Zero Gate Voltage Drain Current (VDS - Hated VDSS, VGS = 0) (Vos = Rated VDSS. VGS = 0, Tj = 125'C) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS - Ol Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VQS = 0) V(BR)DSS 'DSS IGSSF 'GESR 100 100 100 Vdc nAdc nAdc nAdc ON CHARACTERISTICS* Gale Threshold Voltage (VDS - VGS- ID - 1 mA) Tj = 100°C Static Drain-Source On-Resistance <VGS - 10 Vdc, ID = 12.5 Adc) Drain-Source On-Voltsge (VQS ~ 10V) (ID = 25 Adc) (ID = 12.5 Adc, TJ = ioo°o Forward Transconductance (VDS = 10 V, ID - 12-5 A) vGS(th) 'DS(on) vDS(on) 9FS 1.5 4.5 0.14 3.5 2.6 Vdc Ohm Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS ~ 25 v. VGS ~ o f = 1 MHz) See Figure 10 Ciss CQSS crss 2000 950 400 pF SWITCHING CHARACTERISTICS* (Tj = 100TI Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge WDD " 25 v. ID = 0.5 Rated ID Rgen = 60 ohmsl See Figures 12 and 13 |VDS = 0.8 Rated VDSS. ID = Rated ID. VGS -10V) See Figure 1 1 'd(on) tr 'd(off) tf Q9S Qgd 50 (Typ) 25 (Typ) 33 (Typ) 300 150 180 ns nC SOURCE DRAIN DIODE CHARACTERISTICS' Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = Rated ID VGS - 01 VSD 'on 'rr 3.8 (Typ) 100 (Typ) 275 (Typ) Vdc ns ns INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25" from the package to the source bond pad) Ld Ls 5 (Typ) 12.5 (Typ) nH INTERNAL PACKAGE INDUCTANCE (TO-21S) Internal Drain Inductance (Measured from screw on tab to center of die) (Measured from the drain lead 0.25" from package to center of die) Internal Source Inductance (Measured from the source lead 0.25" from package to center of die) Ld LS 4 (Typ) 6 (Typ) 10(Typ) nH