MTE1D3N04BE3 CYSTEKEC | Alldatasheet
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Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Symbol Outline
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MTE1D3N04BE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton TO-220 MTE1D3N04BE3 G：Gate D：Drain S：Source BVDSS 40V ID@VGS=10V , TC=25°C 195A IDSM@VGS=10V , TA=25°C 25A RDS(ON)@VGS=10V , ID=50A 1.4 mΩ(typ) G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 2/ 8 MTE1D3N04BE3 CYStek Product Specification Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 40 V Gate-Source V oltage VGS ±20 Continuous Drain Current @TC=25C, VGS=10V (silicon limit) (Note 1) ID 250* A Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1) 176.8* Continuous Drain Current @TC=25C, VGS=10V (package limit) (Note 1) 195 Continuous Drain Current @TA=25C, VGS=10V (Note 2) IDSM 25 Continuous Drain Current @TA=70C, VGS=10V (Note 2) 20 Pulsed Drain Current @ VGS=10V IDM 1000* Avalanche Current @L=100μH IAS 140 Single Pulse Avalanche Energy @ L=1mH, ID=60 Amps, VDD=35V (Note 4) EAS 1800 mJ Repetitive Avalanche Energy (Note 3) EAR 25 Power Dissipation TC=25C (Note 1) PD 250 W TC=100C (Note 1) 125 TA=25C (Note 2) PDSM 2.1 TA=70C (Note 2) 1.4 Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL 300 C Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG 260 Operating Junction and Storage Temperature Tj, Tstg -55~+175 *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 0.6 C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 58 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=1mH, IAS=34A, VGS=10V , VDD=35V.
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 3/ 8 MTE1D3N04BE3 CYStek Product Specification Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - V VGS=0V, ID=250μA VGS(th) 2 - 4 VDS = VGS, ID=250μA *GFS - 35.8 - S VDS =10V, ID=20A IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - 1 μA VDS =32V , VGS =0V - - 25 VDS =32V , VGS =0V , Tj=125C *RDS(ON) - 1.4 1.8 mΩ VGS =10V, ID=50A Dynamic *Qg - 174.1 - nC VDD=20V , ID=50A,VGS=10V *Qgs - 39.2 - *Qgd - 54 - *td(ON) - 40.2 - ns VDD=20V , ID=50A, VGS=10V , RG=1Ω *tr - 25.2 - *td(OFF) - 118.2 - *tf - 40 - Ciss - 8756 - pF VGS=0V , VDS=20V , f=1MHz Coss - 1108 - Crss - 666 - Rg - 2.5 - Ω f=1MHz Source-Drain Diode *IS - - 208 A *ISM - - 758 *VSD - 0.79 1.2 V IS=30A, VGS=0V *trr - 33.2 - ns VGS=0V , IF=30A, dIF/dt=100A/μs *Qrr - 29.6 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2%
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 4/ 8 MTE1D3N04BE3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 120 150 180 210 240 270 300 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V 4.5V VGS=4V 5.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS= 6V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 2 4 6 8 10 12 14 16 18 20 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=50A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=50A RDS(ON)@Tj=25°C : 1.4mΩ typ.
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 5/ 8 MTE1D3N04BE3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 100000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 20 40 60 80 100 120 140 160 180 200 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=50A VDS=20V VDS=30V Maximum Safe Operating Area 0.1 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 100ms 10ms 100μs 10μs RDS(ON) Limited TC=25°C, Tj=175°C, VGS=10V,RθJC=0.6°C/W single pulse 1ms Maximum Drain Current vs Case Temperature 100 150 200 250 300 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=0.6°C/W silicon limit package limit
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 6/ 8 MTE1D3N04BE3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 120 150 180 210 240 270 300 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=175°C TC=25°C RθJC=0.6°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.6 °C/W
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 7/ 8 MTE1D3N04BE3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C151E3 Issued Date : 2018.07.05 Revised Date : Page No. : 8/ 8 MTE1D3N04BE3 CYStek Product Specification TO-220 Dimension *: Typical DIM Millimeters Inches DIM Millimeters Inches Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Device Name Date Code 1 2 3 E1D3 N04B □□□□