MTE080N15KJ3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 1/ 9 MTE080N15KJ3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE080N15KJ3 BVDSS 150V 14A ID@VGS=10V , TC=25°C ID@VGS=10V , TA=25°C 3.2A Features RDS(ON)@VGS=10V , ID=10A 80 mΩ(typ)

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • ESD Protected Gate
  • Pb-free lead plating and halogen-free package Symbol Outline TO-252(DPAK)

Ordering Information

MTE080N15KJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / tape& reel MTE080N15KJ3 G D S G：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 2/ 9 MTE080N15KJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 150 Gate-Source V oltage VGS ±20 V Continuous Drain Current @TC=25°C, VGS=10V (Note 1) 14 Continuous Drain Current @TC=100°C, VGS=10V (Note 1) ID 8.9 Continuous Drain Current @TA=25°C, VGS=10V (Note 2) 3.2 Continuous Drain Current @TA=70°C, VGS=10V (Note 2) IDSM 2.6 Pulsed Drain Current @ VGS=10V (Note 3) IDM 56 Avalanche Current IAS 9 A Single Pulse Avalanche Energy @ L=10mH, ID=5A, VDD=50V (Note 4) EAS 125 mJ TC=25°C (Note 1) 50 TC=100°C (Note 1) PD 20 TA=25°C (Note 2) 2.5 Power Dissipation TA=70°C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 50 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=100μH, IAS=5A, VGS=10V , VDD=50V

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 3/ 9 MTE080N15KJ3 CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.13 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 12.6 - S VDS =10V , ID=10A IGSS - - ±10 VGS=±20V - - 1 VDS =120V , VGS =0V IDSS - - 10 μA VDS =120V , VGS =0V , Tj=85°C *RDS(ON) - 84.4 106 mΩ VGS =10V , ID=10A Dynamic *Qg - 17.8 26.7 *Qgs - 4.2 - *Qgd - 6.4 - nC VDD=120V , ID=14A,VGS=10V *td(ON) - 10 - *tr - 33.4 - *td(OFF) - 36.8 - *tf - 24.2 - ns VDS=75V , ID=14A, VGS=10V , RG=10Ω Ciss - 712 - Coss - 85 - Crss - 36 - pF VGS=0V , VDS=25V , f=1MHz Rg - 11.8 - Ω f=1MHz Source-Drain Diode *IS - - 14 A *VSD - 0.83 1.2 V IS=10A, VGS=0V *trr - 48 - ns *Qrr - 93 - nC VGS=0V , IF=14A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 4/ 9 MTE080N15KJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V, 8V, 7V VGS=6V VGS=5.5V V =5VGS VGS=4.5V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=6V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 4 8 12 16 20 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=10A RDS( ON)@Tj=25°C : 84.4 mΩ typ VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=10A

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 5/ 9 MTE080N15KJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crssf=1MHz Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 048 1 2 1 6 2 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=14A VDS=120V VDS=30V VDS=75V Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TC=25°C, Tj=150°C VGS=10V,RθJC=2.5°C/W Single Pulse 10μs Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 6/ 9 MTE080N15KJ3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0246 8 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 300 600 900 1200 1500 1800 2100 2400 2700 3000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.5°C/W VDS=10V VGS, Gate-Source Voltage(V) ID, Drain Current (A) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 7/ 9 MTE080N15KJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 8/ 9 MTE080N15KJ3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Issued Date : 2015.11.25 Revised Date : Page No. : 9/ 9 Spec. No. : C949J3 MTE080N15KJ3 CYStek Product Specification TO-252 Dimension Inches Millimeters Marking: Device Name Date Code E080 N15K □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.