MTE050N15BRH8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Pb-free lead plating and Halogen-free package Symbol Outline

Ordering Information

MTE050N15BRH8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN5×6 MTE050N15BRH8 G：Gate D：Drain S：Source BVDSS 150V ID@VGS=10V , TC=25°C 16A ID@VGS=10V , TA=25°C 4.3A RDS(ON)@VGS=10V , ID=3.4A 49.1mΩ(typ) RDS(ON)@VGS=6V , ID=3.3A 58.5 mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1 S S S G D D D D S S S G D D D D Pin 1

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 2/11 MTE050N15BRH8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage V DS 150 Gate-Source V oltage V GS ±20 V Continuous Drain Current @ TC=25°C, VGS=10V 16 Continuous Drain Current @ TC=100°C, VGS=10V ID 10 Continuous Drain Current @ TA=25°C, VGS=10V 4.3 *3 Continuous Drain Current @ TA=70°C, VGS=10V IDSM 3.4 *3 Pulsed Drain Current I DM 50 *1,2 Avalanche Current @ L=0.1mH I AS 36 A Avalanche Energy @ L=1mH, ID=16A, VDD=25V E AS 128 mJ TC=25℃ 36 TC=100℃ PD 14.4 TA=25℃ 2.5 *3 Total Power Dissipation TA=70℃ PDSM 1.6 *3 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C 100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=4.5A, Rated VDS=150V N-CH Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R θJC 3.5 Thermal Resistance, Junction-to-ambient, max R θJA 50 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V GS=0V , ID=250μA VGS(th) 2 - 4 V VDS = VGS, ID=250μA GFS *1 - 5.5 - S V DS =15V , ID=3A IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 V DS =120V , VGS =0V IDSS - - 5 μA VDS =120V , VGS =0V , Tj=55°C - 49.1 65 V GS =10V , ID=3.4A RDS(ON) *1 - 58.5 82 mΩ VGS =6V , ID=3.3A Dynamic Ciss - 1206 - Coss - 80 - Crss - 7.3 - pF V DS=80V , VGS=0V , f=1MHz

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 3/11 MTE050N15BRH8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qg *1, 2 - 20.1 - Qgs *1, 2 - 5.3 - Qgd *1, 2 - 4.7 - nC VDS=75V , VGS=10V , ID=3.4A tr *1, 2 - 17.2 - tf *1, 2 - 8.8 - ns VDS=100V , ID=1A, VGS=10V , RGS=6Ω Rg - 2 - Ω f=1MHz Source-Drain Diode IS *1 - - 16 ISM *3 - - 50 A VSD *1 - 0.78 1.2 V IS=3.2A, VGS=0V trr - 44.3 - ns Qrr - 71.7 - nC IF=3.2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 4/11 MTE050N15BRH8 CYStek Product Specification Recommended Soldering Footprint & Stencil Design unit : mm

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 5/11 MTE050N15BRH8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 4.5V VGS=4V 10V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=6V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 0 1 2 1 4 1 6 1 8 2 0 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=3.4A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=3.4A RDSON@Tj=25°C : 49.1mΩ typ.

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 6/11 MTE050N15BRH8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 1 02 03 04 05 06 07 08 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold VoltageID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 4 8 1 21 62 02 4 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=3.4A VDS=30V, 75V, 120V from left to right Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TA=25°C, Tj=150°C, VGS=10V RθJA=50°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 Tj, Junctione Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=10V, RθJA=50°C/W Single Pulse

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 7/11 MTE050N15BRH8 CYStek Product Specification Typical Characteristics(Cont.) Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TC=25°C, Tj=150°C, VGS=10V RθJC=2.5°C/W, Single Pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=3.5°C/W Typical Transfer Characteristics 0123456789 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Single Pulse Maximum Power Dissipation 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=3.5°C/W

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 8/11 MTE050N15BRH8 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3.5 °C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 9/11 MTE050N15BRH8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 10/11 MTE050N15BRH8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3 °C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6 °C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C033H8 Issued Date : 2017.11.15 Revised Date : Page No. : 11/11 MTE050N15BRH8 CYStek Product Specification DFN5×6 Dimension E 5.90 6.10 0.232 0.240 θ 8° 12 ° 8 ° 12 ° E1 5.70 5.80 0.224 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Date Code Device Name E050N 15BR 8-Lead DFN5×6 Plastic Package