MTE030N15RJ3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • RoHS compliant package & Halogen-free package Symbol Outline TO-252(DPAK) MTE030N15RJ3 G：Gate D：Drain S：Source G D S

Ordering Information

TO-252 MTE030N15RJ3-0-T3-G (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 2/9 MTE030N15RJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 150 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C 28.7 Continuous Drain Current @ TC=100°C ID 20.3 Pulsed Drain Current (Note 1) IDM 116 Avalanche Current @ L=0.1mH IAS 50 A Avalanche Energy @ L=2mH, ID=18A, VDD=50V EAS 324 Repetitive Avalanche Energy@ L=0.05mH (Note 2) EAR 7.5 mJ Total Power Dissipation @ TC=25℃ 75 Total Power Dissipation @ TC=100℃ PD 37.5 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2 Thermal Resistance, Junction-to-ambient, max RθJA 75 °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - VGS=0V , ID=250μA VGS(th) 2 - 4 V VDS = VGS, ID=250μA IGSS - - ±100 nA VGS=±30V , VDS=0V - - 1 VDS =120V , VGS =0V IDSS - - 25 μA VDS =120V , VGS =0V , Tj=125°C *RDS(ON) - 30 39 mΩ VGS =10V , ID=20A *GFS - 21.7 - S VDS =10V , ID=20A Dynamic *Qg - 35.9 - *Qgs - 9.5 - *Qgd - 9.7 - nC ID=20A, VDS=120V , VGS=10V *td(ON) - 20.4 - *tr - 19.8 - *td(OFF) - 40.4 - *tf - 8.4 - ns VDS=75V , ID=20A, VGS=10V , RGS=3Ω Ciss - 1910 - Coss - 111 - Crss - 15 - pF VGS=0V , VDS=75V , f=1MHz Rg - 1 - Ω f=1MHz

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 3/9 MTE030N15RJ3 CYStek Product Specification Source-Drain Diode *IS - - 28.7 *ISM - - 116 A *VSD - 0.86 1.2 V IS=20A, VGS=0V *trr - 58 - ns *Qrr - 143 - nC IF=20A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 4/9 MTE030N15RJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V 4.5V 5.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=6V, 7V, 10V in descending order Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) VGS=10V, ID=20A ID=20A RDS( ON)@Tj=25°C : 30mΩ typ.

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 5/9 MTE030N15RJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 1 02 03 04 05 06 07 08 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 4 8 1 21 62 02 42 83 23 64 0 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=20A VDS=30V, 75V, 120V from left to right Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS( ON) Limited TC=25°C, Tj=175°C, VGS=10V,RθJC=2°C/W single pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=2°C/W

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 6/9 MTE030N15RJ3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 0123456789 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 3500 4000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=175°C TC=25°C RθJC=2°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2 °C/W

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 7/9 MTE030N15RJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 8/9 MTE030N15RJ3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. : 9/9 MTE030N15RJ3 CYStek Product Specification TO-252 Dimension Inches Marking: Device Name Date Code E030 N15R □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.