MTE030N15RE3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 MTE030N15RE3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE030N15RE3 BVDSS 150V ID@VGS=10V , TC=25°C 36A ID@VGS=10V , TA=25°C 4.6A Features RDS(ON)@VGS=10V , ID=30A 33.3mΩ (typ)

  • Low Gate Charge
  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • Pb-free lead plating and RoHS compliant package Symbol Outline TO-220 MTE030N15RE3 G：Gate D：Drain S：Source G D S

Ordering Information

TO-220 MTE030N15RE3-0-UB-X (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 2/8 MTE030N15RE3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 150 Gate-Source V oltage VGS ±30 V Continuous Drain Current @VGS=10V , TC=25°C 36 Continuous Drain Current @VGS=10V , TC=100°C ID 25.5 Pulsed Drain Current (Note 1) IDM 144 Continuous Drain Current @VGS=10V , TA=25°C 4.6 Continuous Drain Current @VGS=10V , TA=70°C IDSM 3.7 Avalanche Current @L=0.1mH IAS 36 A Avalanche Energy @ L=5mH, ID=15A, VDD=50V (Note 2) EAS 560 Repetitive Avalanche Energy@ L=0.05mH EAR 13 mJ Total Power Dissipation (TC=25℃) 136 Total Power Dissipation (TC=100℃) 68 Total Power Dissipation (TA=25℃) 2.4 Total Power Dissipation (TA=100℃) PD 1.2 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Note : 1. Pulse width limited by maximum junction temperature 2. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=50V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 1.1 Thermal Resistance, Junction-to-ambient, max RθJA 62.5 °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.1 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA GFS - 16 - S VDS =10V , ID=20A IGSS - - ±100 nA VGS=±30V - - 1 VDS =120V , VGS =0V IDSS - - 25 μA VDS =100V , VGS =0V , Tj=125°C *RDS(ON) - 33.3 42 mΩ VGS =10V , ID=30A Dynamic *Qg - 34.8 52 *Qgs - 11.3 - *Qgd - 9.6 - nC ID=20A, VDS=75V , VGS=10V

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 3/8 MTE030N15RE3 CYStek Product Specification *td(ON) - 21.2 - *tr - 20.6 - *td(OFF) - 34.6 - *tf - 9 - ns VDS=75V , ID=20A, VGS=10V , RG=3Ω Ciss - 1773 - Coss - 104 - Crss - 12 - pF VGS=0V , VDS=75V , f=1MHz Rg - 2.2 - Ω f=1MHz Source-Drain Diode *IS - - 43 *ISM - - 172 A *VSD - 0.9 1.2 V IS=30A, VGS=0V *trr - 57 - ns *Qrr - 143 - nC IF=20A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 4/8 MTE030N15RE3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V 6.5VVGS=5.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 25 30 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=30A RDS( ON)@Tj=25°C : 33.3mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=30A

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 5/8 MTE030N15RE3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 1 02 03 04 05 06 07 08 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 4 8 1 21 62 02 42 83 23 64 0 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=20A VDS=75V Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs 10μsRDS( ON) Limited TC=25°C, Tj=175°C, VGS=10V,RθJC=1.1°C/W single pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=1.1°C/W

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 6/8 MTE030N15RE3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 0123456789 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 3500 4000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=175°C TC=25°C RθJC=1.1°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.1 °C/W

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 7/8 MTE030N15RE3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 8/8 MTE030N15RE3 CYStek Product Specification TO-220 Dimension *: Typical Millimeters Inches Millimeters Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Device Name Date Code 1 2 3 E030 N15R □□□□ Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.