MTE010P06J3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast switching Characteristic
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel TO-252(DPAK) MTE010P06J3 G：Gate D：Drain S：Source BVDSS -60V ID @VGS=-10V , TC=25°C -56A ID @VGS=-10V , TA=25°C -10A RDS(ON)@VGS=-10V , ID=-20A 10.6mΩ(typ) G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 2/9 MTE010P06J3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -60 Gate-Source V oltage VGS ±30 V Continuous Drain Current @VGS=-10V , TC=25°C -56 Continuous Drain Current @VGS=-10V , TC=100°C -35.5 Continuous Drain Current @VGS=-10V , TA=25°C -10 Continuous Drain Current @VGS=-10V , TA=100°C ID -6.3 Pulsed Drain Current IDM -224 *1 Single Pulse Avalanche Current @ L=0.1mH IAS -60 A Single Pulse Avalanche Energy @ L=1mH, IAS=-30A, VDD=-25V EAS 450 *2 mJ TC=25℃ 78 *4 TC=100℃ 31 *4 TA=25℃ 2.5 Power Dissipation TA=100℃ PD 1.0 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 1.6 Thermal Resistance, Junction-to-ambient, max RθJA 50 *3 °C/W Note : *1. Pulse width limited by safe operating area. *2 . 100% tested by conditions of VDD=-25V , L=0.1mH, VGS=-10V , IAS=-50A. *3 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. *4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determined the current rating, when this rating falls below the package limit. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -60 - - VGS=0V , ID=-250μA VGS(th) -2 - -4 V VDS = VGS, ID=-250μA GFS - 26.4 - S VDS =-10V , ID=-20A IGSS - - ±100 nA VGS=±30V , VDS=0V - - -1 VDS =-48V , VGS =0V IDSS - - -25 μA VDS =-48V , VGS =0V , Tj=70°C *RDS(ON) - 10.6 14 mΩ VGS =-10V , ID=-20A Dynamic *Qg - 67 - *Qgs - 11.5 - *Qgd - 26 - nC ID=-20A, VDS=-48V , VGS=-10V

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 3/9 MTE010P06J3 CYStek Product Specification *td(ON) - 26.8 - *tr - 27.8 - *td(OFF) - 59.4 - *tf - 16.4 - ns VDS=-30V , VGS=-10V , RG=1Ω, ID=-20A Ciss - 3124 - Coss - 353 - Crss - 205 - pF VGS=0V , VDS=-30V , f=1MHz Rg - 3.7 - Ω f=1MHz Source-Drain Diode * IS - - -56 *ISM - - -224 A *VSD - -0.84 -1.2 V IS=-20A, VGS=0V *trr - 23.4 - ns *Qrr - 20.8 - nC IF=-20A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 4/9 MTE010P06J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 02468 1 0 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V 10V, 9V, 8V, 7V, 6.5V -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) 5.5V 4.5V -VGS=4V Static Drain-Source On-State resistance vs Drain Current 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-6V -7V -10V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-20A RDS(ON)@Tj=25°C : 10.6mΩ typ -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-20A

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 5/9 MTE010P06J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) RDS( ON) Limited DC 10ms 100ms 1ms 100μs TC=25°C, Tj=150°C, VGS=-10V, RθJC=1.6°C/W, single pulse Gate Charge Characteristics 0 1 02 03 04 05 06 07 0 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-20A VDS=-30V VDS=-48V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) -ID, Maximum Drain Current(A)VGS=-10V, Tj(max)=150°C, RθJC=1.6°C/W, single pulse Typical Transfer Characteristics 100 0123456789 1 0 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 6/9 MTE010P06J3 CYStek Product Specification Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=-10V VDS=-15V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TC=25°C RθJC=1.6°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.6°C/W

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 7/9 MTE010P06J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 8/9 MTE010P06J3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C046J3 Issued Date : 2017.06.05 Revised Date : Page No. : 9/9 MTE010P06J3 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Millimeters Marking: Device Name Date Code E010 P06 □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.