MTDN9973Q8 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- RDS(ON)=100mΩ@VGS=4.5V, ID=2A
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Dual N-ch MOSFET package
- Pb-free lead plating package Equivalent Circuit Outline MTDN9973Q8 S:Source D:Drain G:Gate SOP-8
Ordering Information
Device Package Shipping Marking MTDN9973Q8 SOP-8 (Pb-free lead plating package) 3000 pcs / Tape & Reel 9973SS
CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 2/7 MTDN9973Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 60 V Gate-Source V oltage VGS ±20 V Continuous Drain Current @ VGS=10V , TA=25 °C (Note 1) ID 3.9 A Continuous Drain Current @ VGS=10V , TA=70 °C (Note 1) ID 2.5 A Pulsed Drain Current (Note 2&3) IDM 20 A Pd 2 W Total Power Dissipation @ TA=25 °C Linear Derating Factor 0.016 W / °C Operating Junction Temperature Tj -55~+150 °C Storage Temperature Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 62.5 °C/W Note : T1. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad 2. Pulse width limited by maximum junction temperature. 3. Pulse width≤300μs, duty cycle≤2% Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - V VGS=0, ID=250μA ΔBVDSS/ΔTj - 0.06 - V/°C Reference to 25°C, ID=1mA VGS(th) 1.0 - 3.0 V VDS = VGS, ID=250μA GFS - 3.5 - S VDS =10V , ID=3.9A IGSS - - ±100 nA VGS=±20 IDSS - - 1 μA VDS =60V , VGS =0 IDSS - - 25 μA VDS =48V , VGS =0, Tj=70°C *RDS(ON) - - 80 mΩ VGS =10V , ID=3.9A *RDS(ON) - - 100 mΩ VGS =4.5V , ID=2A Dynamic *Qg - 8 13 *Qgs - 2 - *Qgd - 4 - nC ID=3.9A, VDS=48V , VGS=4.5V *td(ON) - 8 - *tr - 4 - *td(OFF) - 20 - *tf - 6 - ns VDS=30V , ID=1A,VGS=10V , RG=3.3Ω, RD=30Ω Ciss - 700 1120 Coss - 80 - Crss - 50 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *VSD - - 1.2 V IS=3.9A, VGS=0V *trr - 28 - ns *Qrr - 35 - nC IS=3.9A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 3/7 MTDN9973Q8 CYStek Product Specification Characteristic Curves
CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 4/7 MTDN9973Q8 CYStek Product Specification Characteristic Curves(Cont.)
CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 5/7 MTDN9973Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 6/7 MTDN9973Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 7/7 MTDN9973Q8 CYStek Product Specification SOP-8 Dimension *: Typical Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A Date Code Device Name 9973SS □□□□ DIM Min. Max. Min. Max. H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: Pure tin plated.
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.