MTC8958Q8

MTC8958Q8 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel MTC8958Q8 SOP-8 G：Gate S：Source D：Drain N-CH P-CH BVDSS 30V -30V ID 7A -6A RDSON(MAX.) 25mΩ 55mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 2/12 MTC8958Q8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 30 -30 Gate-Source V oltage VGS ±20 ±20 V TA=25 °C, VGS=10V (-10V) 7 -6 Continuous Drain Current (Note 2) TA=70 °C, VGS=10V (-10V) ID 5.6 -4.8 Pulsed Drain Current (Note 1) IDM 20 -20 A Power Dissipation for Dual Operation 2 1.6 (Note 2) Power Dissipation for Single Operation PD 0.9 (Note 3) W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 40 °C/W 78 (Note 2) °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 135 (Note 3) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0V , ID=250μA VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=30V , VGS=0V IDSS - - 10 μA VDS=24V , VGS=0V , Tj=70°C - 18 25 VGS=10V , ID=7A *RDS(ON) - 26 35 mΩ VGS=4.5V , ID=5A *GFS - 7 - S VDS=10V , ID=7A Dynamic Ciss - 800 - Coss - 70 - Crss - 71 - pF VDS=20V, VGS=0V, f=1MHz *td(ON) - 6 - *tr - 10 - *td(OFF) - 24 - *tf - 5 - ns VDS=15V, ID=1A, VGS=10V, RG=6Ω *Qg - 8.6 - *Qgs - 2.8 - *Qgd - 2 - nC VDS=15V, ID=7A, VGS=10V

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 3/12 MTC8958Q8 CYStek Product Specification Body Diode *VSD - 0.75 1.2 V VGS=0V , IS=1A *trr - 29 - ns *Qrr - 10 - nC IS=5A, VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - VGS=0, ID=-250μA VGS(th) -1.0 -1.4 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - -1 VDS=-30V , VGS=0V IDSS - - -10 μA VDS=-24V , VGS=0V , Tj=70°C - 41 55 VGS=-10V , ID=-6A *RDS(ON) - 60 75 mΩ VGS=-4.5V , ID=-4.2A *GFS - 4 - S VDS=-10V , ID=-5.3A Dynamic Ciss - 838 - Coss - 64 - Crss - 65 - pF VDS=-20V , VGS=0V , f=1MHz *td(ON) - 8 - *tr - 12 - *td(OFF) - 30 - *tf - 23 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=6Ω *Qg - 12 - *Qgs - 3.5 - *Qgd - 3.3 - nC VDS=-15V , ID=-6A, VGS=-10V Body Diode *VSD - -0.8 -1.2 V VGS=0V , IS=-1A *trr - 32 - ns *Qrr - 13.5 - nC IS=-4.5A, VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 4/12 MTC8958Q8 CYStek Product Specification Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 0123456789 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) VGS=2.5V VGS=3V VGS=3.5V 10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=3VVGS=2.5V VGS=10V VGS=4V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=4A VGS=10V, ID=5A VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=5A ID=4A

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 5/12 MTC8958Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), NormalizedThreshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=7A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=10V, RθJA=78°C/W Single Pulse RDS(ON) Limited 1μs Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 6/12 MTC8958Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Single Pulse Maximum Power Dissipation 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=78C/W Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=4V, RθJA=78°C/W Single Pulse RDS(ON) Limited 1μs Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, V GS=5V, RθJA=78°C/W Single Pulse RDS(ON) Limited 1μs

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 7/12 MTC8958Q8 CYStek Product Specification Typical Characteristics : Q2( P-channel) Typical Output Characteristics 0123456789 1 0 DS, Drain-Source Voltage(V) -ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 5V,4.5V -VGS=2.5V -VGS=3V -VGS=3.5V -VGS=4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-3V VGS=-2.5V VGS=-10V VGS=-4V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-3.5A VGS=-10V, ID=-4.5A -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-4.5A ID=-3.5A

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 8/12 MTC8958Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th),Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) VDS=-10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 1 6 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-15V ID=-6A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μsRDS(ON) Limited TA=25°C, Tj=150°C, VGS=-10V, RθJA=78°C/W Single Pulse 1μs Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-10V, RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 9/12 MTC8958Q8 CYStek Product Specification Typical Characteristics(Cont.) : Q2(P-channel) Single Pulse Maximum Power Dissipation 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=78C/W Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μsRDS(ON) Limited TA=25°C, Tj=150°C, VGS=-4V, RθJA=78°C/W Single Pulse 1μs Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TA=25°C, Tj=150°C, VGS=-5V, RθJA=78°C/W Single Pulse 1μs

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 10/12 MTC8958Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C839Q8 Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 11/12 MTC8958Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Issued Date : 2013.05.10 Revised Date : 2014.03.27 Page No. : 12/12 Spec. No. : C839Q8 MTC8958Q8 CYStek Product Specification SOP-8 Dimension *: Typical H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Top View A B Front View F C D E G I Part A H J K O M L N Right side View Part A Date Code

8958 Device Name