MTC500A AMMSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
package. C opper base Plate with Inter-DCB. Planar passivated chips. Isolation voltage 3600 V~.
Applications
DC motor control. Softstart AC motor controller. Light, heat and temperature control. Advantages Space and weight savings. Simple mounting with two screws. Improved temperature and power cycling. Reduced protection circuits. Symbol Test Conditions Maximum Ratings Unit ITRMS, IFRMS ITAVM, IFAVM TVJ=TVJM TC=85oC; 180° sine 785 500 A ITSM, IFSM TVJ=45°C t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine 15000 16000 A TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 13000 14400 i2dt TVJ=45°C t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine 1125000 1062600 A2s TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 845000 813000 (di/dt)cr TVJ=TVJM repetitive, IT=45A f=50Hz, tp=200µs VD=2/3VDRM IG=0.45A non repetitive, IT=ITAVM diG/dt=0.45A/µs 100 500 A/µs (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/µs PGM TVJ=TVJM tp=30µs IT=ITAVM tp=300µs 120 60 W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 - 40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. Weight Typical including screws 1.6 kg Symbol Test Conditions Maximum Ratings Unit IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 40 mA VT, VF IT, IF=80A; TVJ=25°C 1.3 V VTO For power-loss calculations only (TVJ=125°C) 0.8 V rT 0.3 m VGT VD=6V; TVJ=25°C TVJ=-40°C 2 3 V Electrical Diagram Located On Pg. 2 Also Orderable Under MTC500A-1600V
American Microsemiconductor Inc. Page 2 of 4
133 Kings Road, Madison, NJ 07940 AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325
tel. 973-377-9566 fax. 973-377-3078 http://www.americanmicrosemiconductor.com IGT VD=6V; TVJ=25°C TVJ=-40°C 300 m VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 10 m IL TVJ=25°C; tp=10µs; VD=6V IL IG=0.45A; IH TVJ=25°C; VD=6V; RGK= 300 m tgd TVJ=25°C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/µs 2 µs tq TVJ=TVJM; IT=20A; tp=200µs; -di/dt=10A/µs typ. QS TVJ=TVJM; IT, IF=25A; -di/dt=0.64A/µs 760 u IRM 275 A RthJC per thyristor/diode; DC current per module 0.1 RthJK per thyristor/diode; DC current per module 0.1 dS Creeping distance on surface 12. m dA Strike distance through air 9.6 m a Maximum allowable acceleration 50 m/
American Microsemiconductor Inc. Page 3 of 4 tel. 973-377-9566 fax. 973-377-3078 http://www.americanmicrosemiconductor.com
American Microsemiconductor Inc. Page 4 of 4 tel. 973-377-9566 fax. 973-377-3078 http://www.americanmicrosemiconductor.com