AMSIRDK250-08 AMMSEMI | Alldatasheet

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American Microsemiconductor Inc. Page 1 of 2

133 Kings Road, Madison, NJ 07940 AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325

Tel. 973-377-9566 fax. 973-377-3078 http://www.americanmicrosemiconductor.com Feature  International standard package  Low forward voltage drop  Isolation voltage 2500V Application  AC/DC machinery control  Rectifying power supply  Frequency converters DC DA DK Maximum ratings: Symbol Parameter Test condition Rating Unit IFA V Average forward current 180°sine half wave, 50HZ single side heat dissipation TC=100 250 A IFSM Forward surge current t=10ms,50HZ,sin,Tjm 11000 A I2t I2t value VR = 0.6VRRM Tjm 617000 A2S VISO Isolation voltage AC one minute 2500 V Tj Operating junction temperature -40 to +150 C Tjm Rated junction temperature 150 C T stg Storage temperature -40 to +125 C Md Mounting torque copper plate M6 4 N· m Mounting torque terminal M8 12 N· m Wt Weight 900 g Symbol Parameter Rating Unit AMS-IRDC250-08 AMS-IRDA250-08 AMS-IRDK250-08 AMS-IRDC250-12 AMS-IRDA250-12 AMS-IRDK250-12 AMS-IRDC250-14 AMS-IRDA250-14 AMS-IRDK250-14 AMS-IRDC250-16 AMS-IRDA250-16 AMS-IRDK250-16 VRRM Peak reverse repetitive voltage 800 1200 1400 1600 V VRSM Peak reverse non-repetitive voltage 960 1300 1500 1700 V

American Microsemiconductor Inc. Page 2 of 2 Tel. 973-377-9566 fax. 973-377-3078 http://www.americanmicrosemiconductor.com Electrical characteristics: Symbol Parameter Test condition Rating Unit IRRM Peak off-state repetitive current VD=VDRM, sine half wave, Tjm 20 mA VFM Peak forward voltage IFM =1000A, Tj=25 C 1.4 V Rth(j-c) Thermal resistance junction-case Single-side heat dissipation, sine half wave 0.14 C/W On-state surge current (KA) On-state peak voltage (V) Transient thermal impedance (junction-case) Time (s) On-state surge current vs cycles Cycles @50Hz I2t (103A2S) I2t Characteristic Time (ms) Transient thermal impedance (℃/W) On-state current vs voltage characteristic On-state peak current (A)