MTC4103N6 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Features
- Simple drive requirement
- Low gate charge
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package Equivalent Circuit Outline
Ordering Information
MTC 4103N6 -0-T1-G SOT- 26 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTC4103N6 SOT-26 G ：Gate S：Source D ：Drain G1 N-CH P-CH BV DSS 30V -30V ID 4.1A(VGS =10V) -3.2A(VGS =-10 V) R DSON (TYP .) 31.5mΩ(VGS =10V) 54.8mΩ(VGS =-10V) 65.1mΩ(VGS =4.5V) 85.6mΩ(VGS =-4.5V) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 2/12 MTC4103N6 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit N-channel P-channel Drain-Source Breakdown V oltage BV DSS 30 -30 V Gate-Source V oltage V GS Ʋ20 Ʋ20 Continuous Drain Current @TA =25 C (Note 1) ID 4.1 -3.2 A Continuous Drain Current @TA =70 C (Note 1) 3.3 -2.6 Pulsed Drain Current (Note 2) IDM 24 -20 Total Power Dissipation (Note 1) TA =25 ƱC PD 1.14 W TA =70 ƱC 0.73 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10 sec 2.Pulse width limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R θJC 80 C /W Thermal Resistance, Junction-to-ambient, max R θJA 110 (Note ) Thermal Resistance, Junction-to-ambient, max 150 Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤10 sec; 150 °C/W on steady state. N-Channel Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS 30 - - V V GS =0V , ID =250μA ∆BV DSS /∆Tj - 0.03 - V/C Reference to 25C, ID =250μA V GS(th) 1.2 - 2.5 V V DS =V GS , ID =250μA IGSS - - ±100 nA V GS =±20V , VDS =0V IDSS - - 1 μA V DS =24V , VGS =0V - - 5 V DS =24V , VGS =0V , Tj=55C *R DS(ON) - 31.5 42 m V GS =10V , ID =3.1A - 65.1 95 V GS =4.5V , ID =2A *G FS - 2.4 - S V DS =10V , ID =3A Dynamic Ciss - 226 300 pF V DS =15V , VGS =0V , f=1MHz Coss - 35 - Crss - 36 - *td(ON) - 4.6 - ns V DS =15V , ID =2A, VGS =10V , RG =1Ω *tr - 16.2 - *td(OFF) - 13.2 - *tf - 4.6 -
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 3/12 MTC4103N6 CYStek Product Specification *Qg (VGS =10V) - 5.9 7.7 nC V DS =15V , ID =3A, VGS =10V *Qg(V GS =4.5V) - 3.1 4 *Qgs - 1 - *Qgd - 1.7 - Rg - 1.2 - f=1MHz Source-Drain Diode *V SD - 0.8 1 V V GS =0V , IS=1A *trr - 7 9.1 ns IF=4.5A, VGS =0V , dIF/dt=100A/μs *Qrr - 3.2 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2% P-Channel Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS -30 - - V V GS =0V , ID =-250μA ∆BV DSS /∆Tj - -0.02 - V/C Reference to 25C, ID =-250μA V GS(th) -1.2 - -2.5 V V DS =V GS , ID =-250μA IGSS - - ±100 nA V GS =±20V , VDS =0V IDSS - - -1 μA V DS =-24V , VGS =0V - - -5 V DS =-24V , VGS =0V , Tj=55C *R DS(ON) - 54.8 77 m V GS =-10V , ID =-2.7A - 85.6 128 V GS =-4.5V , ID =-2A *G FS - 4.2 - S V DS =-10V , ID =-3A Dynamic Ciss - 487 635 pF V DS =-15V , VGS =0V , f=1MHz Coss - 59 - Crss - 59 - *td(ON) - 6.2 - ns V DS =-15V , ID =-3A, VGS =-10V , RG =1Ω *tr - 20.8 - *td(OFF) - 31.8 - *tf - 7 - *Qg (VGS =-10V) - 11 15 nC V DS =-15V , ID =-3A, VGS =-10V *Qg(V GS =-4.5V) 5.5 7.5 *Qgs - 1.7 - *Qgd - 2.3 - Rg - 11 - f=1MHz Source-Drain Diode *V SD - -0.81 -1 V V GS =0V , IS=-1A *trr - 8.7 - ns IF=-1A, VGS =0V , dIF/dt=100A/μs *Qrr - 4.0 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2%
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 4/12 MTC4103N6 CYStek Product Specification N-channel Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 3.5V VGS=3V 10V, 9V, 8V, 7V, Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Curre nt 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State œeŴŪŴŵaůceĩŮΩĪ VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) ŕū=ijĶƱC ŕū=IJĶıƱC VGS=0V Static Drain-Source On-State Resistance vs Gate-Sou rce Voltage 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- Ŕŵaŵe œeŴŪŴŵaůceĩŮΩĪ ID=3A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=3A RDS(ON)@ŕū=ijĶƱC : ĴIJįĶŮΩ ŵyűį
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 5/12 MTC4103N6 CYStek Product Specification N-channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ VGS(th), NormalizedThreshold Voltage ID=250μA ID=1mA Single Pulse Power Rating, Junction to Ambient 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=IJĶıƱC TA=ijĶƱC RθJA=IJIJıƱCİŘ Gate Charge Characteristics 0 2 4 6 8 10 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=3A VDS=15V VDS=24V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=ijĶƱC, ŕū=IJĶıƱC, VGS=10, RθJA =IJIJıƱCİŘ Single Pulse RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ ID, Maximum Drain Current(A)TA=ijĶƱC, ŗGS=10V, RθJA=IJIJıƱCİŘ
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 6/12 MTC4103N6 CYStek Product Specification N-channel Typical Characteristics(Cont.) Typical Transfer Characteristics 0 2 4 6 8 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed ŕa=ijĶƱC VDS=15V VDS=10V Transient Thermal Response Curves 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA =110 ƱCİŘ
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 7/12 MTC4103N6 CYStek Product Specification P-channel Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) 3.5V -VGS=3V 7V, 6V, 5V, 4V, 3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Curre nt 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State œeŴŪŴŵaůceĩŮΩĪ VGS=-10V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) ŕū=ijĶƱC ŕū=IJĶıƱC VGS=0V Static Drain-Source On-State Resistance vs Gate-Sou rce Voltage 100 150 200 250 300 0 1 2 3 4 5 6 7 8 -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- Ŕŵaŵe œeŴŪŴŵaůceĩŮΩĪ ID=-3A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-3A RDS(ON)@ŕū=ijĶƱC : Ķĵį8ŮΩ ŵyűį
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 8/12 MTC4103N6 CYStek Product Specification P-channel Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 4 8 12 16 20 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ -VGS(th),Normalized Threshold Voltage ID=-250μA ID=-1mA Single Pulse Power Rating, Junction to Ambient 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=IJĶıƱC TA=ijĶƱC RθJA=IJIJıƱCİŘ Gate Charge Characteristics 0 2 4 6 8 10 12 14 16 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-15V ID=-3A VDS=-24V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μsRDS(ON) Limited TA=ijĶƱC, ŕū=IJĶıƱC, VGS=-10V, RθJA=IJIJıƱCİŘ Single Pulse Maximum Drain Current vs JunctionTemperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175 ŕū, JŶůcŵŪŰů ŕeŮűeųaŵŶųeĩƱCĪ -ID, Maximum Drain Current(A)TA=ijĶƱC, ŗGS=-10V, RθJA=IJIJıƱCİŘ
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 9/12 MTC4103N6 CYStek Product Specification P-channel Typical Characteristics(Cont.) Typical Transfer Characteristics 0 1 2 3 4 5 6 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=-10V Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) Pulsed ŕa=ijĶƱC VDS=-15V VDS=-10V Transient Thermal Response Curves 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA =110 ƱCİŘ Recommended Soldering Footprint
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 10/12 MTC4103N6 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 11/12 MTC4103N6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C561N6 Issued Date : 2018.09.03 Revised Date : 2018.09.06 Page No. : 12/12 MTC4103N6 CYStek Product Specification SOT-26 Dimension DIM Millimeters Inches DIM Millimeters Inches D 2.820 3.020 0.111 0.119 θ 0 8 0 8 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : Lead : Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Gate1 (G1) Pin 2. Source2 (S2) Pin 3. Gate2 (G2) Pin 4. Drain2 (D2) Pin 5. Source1 (S1) Pin 6. Drain1 (D1) 4103 □□□□ Device Name Date Code