MTC2103BJ4

MTC2103BJ4 CYSTEKEC | Alldatasheet

Document overview

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• PDF pages: 11

Technical content

Features

• Low Gate Charge
• Simple Drive Requirement N-CH P-CH BVDSS 30V -30V ID 8A -6A RDSON(MAX) 21mΩ 45mΩ
• 100% UIS test @ VD=15V , L=0.1mH, VG=10V , IL=7.5A, Rated VDS=30V , for N-CH
• 100% UIS test @ VD=15V , L=0.1mH, VG=-10V , IL=-6A, Rated VDS=-30V , for P-CH
• RoHS compliant & Halogen-free package Equivalent Circuit Outline MTC2103BJ4 TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source V oltage VDS 30 -30 VGS ±20 ±20 V Gate-Source V oltage ID 8 -6 Continuous Drain Current @ TC=25°C ID 6 -5 Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 IDM 32 -24 IAS 15 -15 A Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A(-10A for P-ch),RG=25Ω EAS 5 5 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 2.5 2.5 mJ Total Power Dissipation (TC=25℃) Pd 25

18 W Total Power Dissipation (TC=100℃)

Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1%

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 2/11 MTC2103BJ4 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 6 °C/W Thermal Resistance, Junction-to-ambient, max * 1 Rth,j-a 90 °C/W Note : *1 62.5°C/W when mounted on a 1 in pad of 2 oz copper. N-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA VGS(th) 1 1.5 3 V VDS =VGS, ID=250μA GFS *1 - 16 - S VDS =5V , ID=8A IGSS - - ±100 nA VGS=±20, VDS=0 - - 1 μA VDS =24V , VGS =0 IDSS - - 25 μA VDS =20V , VGS =0, Tj=125°C ID(ON) *1 8 - - A VDS =10V , VGS =10V - 18 21 mΩ VGS =10V , ID=8A RDS(ON) *1 - 34 42 mΩ VGS =4.5V , ID=6A Dynamic Qg(VGS=10V)*1 - 11 - Qg(VGS=4.5V)*1 - 6 - Qgs *1 - 1.2 - Qgd *1 - 3.3 - nC ID=8A, VDS=15V , VGS=10V td(ON) *1 - 11 - tr *1 - 16 - td(OFF) *1 - 36 - tf *1 - 20 - ns VDS=15V , ID=1A, VGS=10V , RG=6Ω Ciss - 1115 - Coss - 116 - Crss - 82 - pF VGS=0V , VDS=15V , f=1MHz Source-Drain Diode IS *1 - - 2.3 ISM *2 - - 9.2 A VSD *1 - - 1.2 V IF=IS, VGS=0V trr *1 - 50 - ns Qrr *1 - 2 - nC IF=IS, VGS=0, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature.

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 3/11 MTC2103BJ4 CYStek Product Specification P-CH Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -3 V VDS =VGS, ID=-250μA GFS *1 - 16 - S VDS =-5V , ID=-6A IGSS - - ±100 nA VGS=±20, VDS=0 - - -1 μA VDS =-24V , VGS =0 IDSS - - -25 μA VDS =-20V , VGS =0, Tj=125°C ID(ON) *1 -6 - - A VDS =-5V , VGS =-10V - 36 45 mΩ VGS =-10V , ID=-6A RDS(ON) *1 - 60 76 mΩ VGS =-4.5V , ID=-5A Dynamic Qg(VGS=-10V)*1 - 10 - Qg(VGS=-4.5V)*1 - 7.2 - Qgs *1 - 2.2 - Qgd *1 - 2 - nC ID=-6A, VDS=-15V , VGS=-10V td(ON) *1 - 5.5 - tr *1 - 10 - td(OFF) *1 - 28 - tf *1 - 15 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=6Ω Ciss - 1320 - Coss - 500 - Crss - 460 - pF VGS=0V , VDS=-15V , f=1MHz Source-Drain Diode IS *1 - - -2.3 ISM *2 - - -9.2 A VSD *1 - - -1.2 V IF=IS, VGS=0V trr *1 - 55 - ns Qrr *1 - 2.2 - nC IF=IS, VGS=0, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature.

Ordering Information

Device Package Shipping Marking MTC2103BJ4 TO-252 (RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel 2103

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 4/11 MTC2103BJ4 CYStek Product Specification Characteristic Curves V - Drain S ource Voltage(V) I - Drain C urrent(A) D DS 7V 5V 3.5V 3 4 4.5V On-Region Characteristics V = 10VGS 4.5 V I - Drain C urrent(A) R -Normalized Drain-S ource On-R esistance 1.6 0.8 DS(ON) 1.2 1.0 1.4 D GSV = 3.5 V 2.2 1.8 2.0 2.4 4.0 V 18 24 7.0 V 6.0 V 5.0 V 10 V On-R esistance Variation with Drain C urrent and Gate Voltage On-Resistance Variation with Temperature R - Normalized Drain-S ource On-R esistance DS(on) T - J unction Temperature (° C ) 0.4 -50 0.7 1.0 J -25 25 DI = 8A V = 10V 1.3 1.6 1.9 GS 12550 75 100 150 On-R esistance Variation with Gate-to-S ource Voltage T = 125°C V - Gate-S ource Voltage( V ) 0.01 DS(ON) 0.02 0.04 0.03 GS T = 25°CA A 0.08 0.06 0.05 0.07 0.09 81 0 I = 4 AD R - On-Resistance( Ω ) N-Channel Body Diode Forward Voltage Variation with S ource C urrent and Temperature 25° C T = 125° C V - Body Diode Forward Voltage( V ) Is - R everse Drain C urrent( A ) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 -55° C 1.4 T = -55° C V - Gat e-Source Volt age( V ) I - Drain C urrent(A) D 2.01.5 GS V = 10V DS A 3.02.5 3.5 25° C 125° C Transfer Charact erist ics

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 5/11 MTC2103BJ4 CYStek Product Specification Characteristic Curves(Cont.) Q - Gate C harge( nC ) V - Gate-S ource Voltage( V )GS g 4 8 I = 8A D 12 16 10V 15V V = 5VDS Gat e Charge Charact erist ics V - Drain-Source Volt age( V ) Cap aci t an ce( p F) DS 5 10 15 20 GS f = 1MH z V = 0 V Cap aci t an ce Ch ar act e r i st i cs 25 30 150 300 450 600 750 900 1500 1200 1350 1050 Ci ss Co ss Cr ss DC V - Drain-Source Volt age( V ) Maximum S afe Operating Area I - Drain Current( A ) V = 10V S ingle P ulse R = 90°C / W T = 25°C 0.1 0.01 D 0.1 DS θJA A GS R Limit 100 DS(ON) 10s 10 100 100μs 10ms 100ms 1ms P( pk ),Peak Tr ansi ent Pow er ( W ) Si n gl e Pu l se R = 90°C / W T = 25°CA θJA 0.001 0.01 0.1 100101 1000 S ingle P ulse Maximum P ower Dissipation t ,T ime (s ec ) Transient Thermal Response Curve T r( t ),Normalized E ffective ransient Thermal Resist ance 0.001 0.01 0.02 S ingle P ulse 0.01 Dut y Cycle = 0.5 0.1 0.1 0.05 0.2 P θJA4.R (t)=r(t) + R 3.T - T = P * R (t ) θJA2.R =90°C / W 1.Duty Cycle,D = DM 1 10 J 1000100 θJA θJAA Notes:

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 6/11 MTC2103BJ4 CYStek Product Specification Characteristic Curves(Cont.) P-Channel -5.0V -V Drain-Source Voltage( V ) Typi cal Out put Characteristics -I Drain C urrent( A )5 D 0 1 DS V = -10VGS -6.0V 42 3 -3.0V -3.5V -4.0V -4.5V -I Drain Current( A ) On-Resist ance Variat ion wit h Drain Current and G ate Voltage R - Normalized Drain-S ource On-Resistance0.8 DS(ON) 1.2 1.0 1.4 D V = -4V 2.2 1.8 1.6 2.0 2.4 GS -4.5V -7.0V 15 20 -8.0V -10V -6.0V T - Junct ion Temperat ure( C ) On-Resist ance Variat ion with Temperat ure R Normalized Drain-S ource On-R esistance0.6 -50 DS(ON) 0.8 1.0 j -25 25 I = -6A V = - 10V 1.2 1.4 1.6 G S D 75 50 100 150125 T = 25 C -V G ate-Source Volt age(V) On-Resist ance Variat ion wit h Gat e-Source Voltage R - On-Resistance(Ω) 0 2 DS(on) 0.03 GS A 0.06 0.09 0.12 6 8 I = -3A T = 125 CA ° D °25 C Body Diode Forward Voltage Variation with -V - Body Diode Forward Voltage( V ) 0.1 -I -R everse Drain C urrent( A )S 0.0001 0.001 0.01 0.40.2 S D 0.6 V =0V S D 100 T = 125 CA ° 1.20.8 1.0 -55 C° 1.4 Source C urrent and Temperature -V ,G ate-Source Voltage Tr ansf er Charact erist ics -I -Drain C urrent( A ) 0 D GS DSV = -5.0V 3 4 5 25 C °T = -55 CA 125 C°

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 7/11 MTC2103BJ4 CYStek Product Specification Characteristic Curves(Cont.) Q , Gat e Charge( nC ) Gat e Charge Charact erist ics -V ,Gate-S ource Voltage( V )0 GS g I = -6A D 1086 12 -15V -10V V = -5VDS Capacit ance Charact erist ics -V Drain-Sour ce Vol t age( V ) C apacitance( pF ) 400 200 600 DS 5 10 1400 1000 800 1200 1600 2515 20 Crs s Coss Ciss V = 0VGS f = 1MH Z -V ,Drain-Sour ce Vol t age( V ) Maximum S afe Operating Area -I ,Drain C urrent( A ) R = 90 C / WJA T = 25 C SINGLE PULSE GSV = -10V 0.01 0.1 A D 0.1 θ DS DS(ON)R Limit 100 DC 100 10ms 10s 100ms μ100 s 1ms S ingle P ulse T ime( sec ) S ingle P ulse Maximum P ower D issipation Pow er ( W ) 0.01 0.1 1 30010010 T = 25 C R = 90 C / W SI NGLE PULSE JA A θ ° t1 , Time( ms ) 0.1 Transient Thermal Response Curve r ,Normalized Effective Transient Thermal Resistance 0.01 0.02 0.001 0.0001 ( t ) 0.01 0.001 0.01 SINGLE PULSE 0.05 0.1 0.2 D=0.5 0.1 R (t)= r(t) R A Duty Cycle,D= t / t Tj - T = P R (t) R = 90 C/W 11 0 P(pk) JA JA 1000100 JA JA

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 8/11 MTC2103BJ4 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 9/11 MTC2103BJ4 CYStek Product Specification Recommended soldering footprint Unit : mm

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 10/11 MTC2103BJ4 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 11/11 MTC2103BJ4 CYStek Product Specification TO-252 Dimension Inches Millimeters Marking: Style: Pin 1.Soure 1 2.Gate 1 3.&Tab Drain 1& Drain 2 4. Source 2 5. Gate 2 4-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J4 2103 □□□□ Device Name Date code Tab D3 0.0866 0.1181 2.20 3.00 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead : KFC; Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.