MTB080P06M3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Single Drive Requirement
  • Ultra High Speed Switching
  • Pb-free lead plating and halogen-free package Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 1000 pcs / tape & reel MTB080P06M3 SOT-89 D G D S G：Gate S：Source D：Drain Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 : 1000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 2/9 MTB080P06M3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -60 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TA=25°C -3.2 Continuous Drain Current @ TA=70°C ID -2.6 Pulsed Drain Current IDM -18 *1, 3 A Total Power Dissipation (TA=25℃) PD 2 *2 W Linear Derating Factor 0.02 W/°C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board *3. Pulse width≤300μs, duty cycle≤2% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5* °C/W * Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -60 - - V VGS=0V , ID=-250μA ∆BVDSS/∆Tj - -0.05 - V/°C Reference to 25°C, ID=-1mA VGS(th) -1 - -2.5 V VDS=VGS, ID=-250μA GFS - 10 - S VDS=-5V , ID=-3A IGSS - - ±100 nA VGS=±20V , VDS=0V - - -1 VDS=-48V , VGS=0V IDSS - - -25 μA VDS=-48V , VGS=0V (Tj=70°C) - 83 110 ID=-3A, VGS=-10V *RDS(ON) - 112 150 mΩ ID=-3A, VGS=-4.5V Dynamic Ciss - 498 - Coss - 48 - Crss - 38 - pF VDS=-30V , VGS=0V , f=1MHz *td(ON) - 6.9 - *tr - 17.4 - *td(OFF) - 29.2 - *tf - 14.8 - ns VDS=-30V , ID=-1A, VGS=-10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 3/9 MTB080P06M3 CYStek Product Specification *Qg - 11 - *Qgs - 1.7 - *Qgd - 2.4 - nC VDS=-30V , ID=-3A, VGS=-10V Source-Drain Diode *VSD - -0.81 -1.2 V VGS=0V , IS=-2A *trr - 10.6 - ns *Qrr - 6.4 - nC IF=-2A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 4/9 MTB080P06M3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 DS, Drain-Source Voltage(V) -ID, Drain Current (A) -4V VGS=-3V -3.5V -4.5V Normalized Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V VGS=-4.5V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IS, Source Drain Current(A) -VSD, Source-Drain Voltage(V) VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 02468 1 -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-3A Normalized Drain-Source On-State Resistance vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-3A RDS(ON)@Tj=25°C : 83mΩ typ.

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 5/9 MTB080P06M3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Normalized Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-10V Pulsed TA=25°C Gate Charge Characteristics 02468 1 0 1 2 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-48V ID=-3A VDS=-30V VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=-10V RθJA=62.5°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-10V, RθJA=62.5°C/W

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 6/9 MTB080P06M3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0246 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=62.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance D=0.5 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62.5°C/W 0.1 0.05 0.02 0.01 Single Pulse Reel Dimension

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 7/9 MTB080P06M3 CYStek Product Specification Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 8/9 MTB080P06M3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 9/9 MTB080P06M3 CYStek Product Specification SOT-89 Dimension DIM Inches Millimeters Inches Millimeters D Marking: B8P6 □□□□ E F G C B A I D H 321 Date Code Device Name Style: Pin 1. Gate 2. Drain 3. Source 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 E 0.0126 0.0205 0.32 0.52 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.