MTB050P03KN3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • For load switch application only
  • Compact and low profile SOT-23 package
  • Advanced trench process technology
  • High density cell design for ultra low on resistance
  • ESD protected gate , HBM≥5kV
  • Pb-free lead plating package Symbol Outline

Ordering Information

MTB050P03KN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTB050P03KN3 SOT-23 G：Gate S：Source D：Drain BVDSS -30V ID @ VGS=-10V, TA=25°C -3.8A RDSON@VGS=-10V , ID=-4A 51.3mΩ(typ) RDSON@VGS=-4.5V ,ID=-3A 67.5mΩ(typ) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name D G S

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 2/9 MTB050P03KN3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage V DS -30 Gate-Source V oltage V GS ±20 V Continuous Drain Current @ TA=25°C , VGS=-10V (Note 4) -3.8 Continuous Drain Current @ TA=70°C, VGS=-10V (Note 4) ID -3.0 Pulsed Drain Current (Notes 1, 2) I DM -14.8 A ESD susceptibility (Note 3) V ESD 5000 V PD 1.38 W Maximum Power Dissipation (Note 4) Linear Derating Factor 0.01 W/°C Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Human body model, 1.5kΩ in series with 100pF 4. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on minimum copper pad Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) R θJA 90 Thermal Resistance, Junction-to-Case R θJA 45 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V V GS=0V , ID=-250μA ∆BVDSS/∆Tj - 0.03 - V/°C Reference to 25 °C, ID=-250μA VGS(th) -1 - -2.5 V V DS=VGS, ID=-250μA IGSS - - ±20 V GS=±16V , VDS=0V - - -1 V DS=-24V , VGS=0V IDSS - - -10 μA VDS=-24V , VGS=0V (Tj=70°C) - 51.3 68 V GS=-10V , ID=-4A *RDS(ON) - 67.5 88 mΩ VGS=-4.5V , ID=-3A *GFS - 5.4 - S V DS=-10V , ID=-3A Source-Drain Diode *VSD - -0.79 -1 V V GS=0V , IS=-1A Trr - 10.6 - ns Qrr - 5.5 - nC VGS=0V , IF=-4A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 3/9 MTB050P03KN3 CYStek Product Specification Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 4/9 MTB050P03KN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=10V, 9V, 8V, 7V, 6V,5V,4V -VGS=3V 3.5V Brekdown Voltage vs Ambient Temperature 0.8 0.9 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=4.5V -VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 1.4 02468 1 0 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 280 320 360 400 012345678 GS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-4A ID=-3A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-4A RDS(ON)@Tj=25°C : 51.3 mΩ typ.

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 5/9 MTB050P03KN3 CYStek Product Specification Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold VoltageID=-250μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=-10V, RθJA=90°C/W Single Pulse RDS( ON) Limited Maximum Drain Current vs JunctionTemperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V, RθJA=90°C/W Typical Transfer Characteristics 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) -VDS=10V Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=-10V Single Pulse Power Rating, Junction to Ambient (Note 1 on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 6/9 MTB050P03KN3 CYStek Product Specification Typical Characteristics(Cont.) Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 T A, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with 1 in² pad area Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 7/9 MTB050P03KN3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 8/9 MTB050P03KN3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3 °C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6 °C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 9/9 MTB050P03KN3 CYStek Product Specification SOT-23 Dimension Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 B5PT XX Device Code Date Code