MTB030N04N3 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Low on-resistance
- Low voltage gate drive
- Excellent thermal and electrical capabilities
- Pb-free lead plating and halogen-free package Equivalent Circuit Outline
Ordering Information
(Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTB030N04N3 SOT-23 G：Gate S：Source D：Drain D G S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name BVDSS 40V ID @VGS=10V 8A RDSON(TYP) VGS=10V , ID=7.9A 25.3mΩ VGS=4.5V , ID=7.3A 34.2mΩ
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 2/ 9 MTB030N04N3 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 40 V Gate-Source V oltage VGS ±20 Continuous Drain Current @ VGS=10V , TC=25C ID 8 A Continuous Drain Current @ VGS=10V , TC=125C 4.6 Continuous Drain Current @ VGS=10V , TA=25C (Note 3) IDSM 4.7 Continuous Drain Current @ VGS=10V , TA=70C (Note 3) 3.8 Pulsed Drain Current (Note 1, 2) IDM 32 Maximum Power Dissipation TC=25°C PD 3 W TC=125°C 1 TA=25°C PDSM 1.25 TA=70°C 0.8 Operating Junction and Storage Temperature Tj, Tstg -55~+175 C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient , max (Note 3) RθJA 100 C/W Thermal Resistance, Junction-to-Case , max RθJC 50 Note: 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤300μs, duty cycle≤2% 3. Surface mounted on 1 in² copper pad of FR-4 board at steady state; 417C/W when mounted on minimum copper pad. 4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175 °C may be used if the PCB allows it. Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - V VGS=0V , ID=250μA ΔBVDSS/ΔTj - 32 - mV/℃ Reference to 25℃, ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA GFS - 9.1 - S VDS=5V , ID=7.9A IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - 1 μA VDS=40V , VGS=0V - - 50 VDS=40V , VGS=0V , Tj=125C - - 150 VDS=40V , VGS=0V , Tj=175C *RDS(ON) - 25.3 34 VGS=10V , ID=7.9A - - 47 VGS=10V , ID=7.9A, Tj=125C - - 65 VGS=10V , ID=7.9A, Tj=175C - 34.2 46 VGS=4.5V , ID=7.3A
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 3/ 9 MTB030N04N3 CYStek Product Specification Dynamic Ciss - 694 - pF VDS=20V , VGS=0, f=1MHz Coss - 36 - Crss - 40 - *td(ON) - 6.8 - ns VDS=20V , ID=1A, VGS=10V , RG=1Ω *tr - 15.8 - *td(OFF) - 22 - *tf - 5.4 - *Qg - 11 - nC VDS=20V , ID=3.9A, VGS=10V *Qgs - 2.02 - *Qgd - 2.05 - Rg - 1.9 - Ω f=1MHz Source-Drain Diode *IS - - 3.8 A *ISM - 32 *VSD - 0.82 1.2 V VGS=0V , IS=5.4A *trr - 6.7 - ns IF=3.9A, dIF/dt=100A/μs *Qrr - 2.9 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2% Recommended Soldering Footprint
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 4/ 9 MTB030N04N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) VGS=2.5V 3.5V 10V, 9V, 8V, 7V, 6V, 5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) 4.5V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 1 2 3 4 5 6 7 8 9 10 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 150 180 210 240 270 300 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=7.9A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=7.9A RDSON@Tj=25°C : 25.3mΩ typ.
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 5/ 9 MTB030N04N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=5V Gate Charge Characteristics 0 2 4 6 8 10 12 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=20V ID=3.9A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms TA=25°C, Tj=150°C,VGS=10V RθJA=100°C/W, Single Pulse 100μs Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=50°C/W
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 6/ 9 MTB030N04N3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 1 2 3 4 5 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=100°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=100°C/W
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 7/ 9 MTB030N04N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 8/ 9 MTB030N04N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C884N3 Issued Date : 2014.08.20 Revised Date : Page No. : 9/ 9 MTB030N04N3 CYStek Product Specification SOT-23 Dimension *: Typical DIM Inches Millimeters DIM Inches Millimeters H 0.0000 0.0040 0.00 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 30N04