MTB020N10RV8 CYSTEKEC | Alldatasheet
Document overview
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- PDF pages: 10
Technical content
Features
Simple Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package Equivalent Circuit Outline
Ordering Information
MTB020N10RV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN3×3 MTB020N10RV8 G：Gate D：Drain S：Source BVDSS 100V ID @ VGS=10V, TA=25°C 7.9A ID @ VGS=10V, TC=25°C 28A RDSON(TYP) VGS=10V , ID=10A 19mΩ VGS=4.5V , ID=10A 24mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 2/10 MTB020N10RV8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Parameter Symbol Limits Unit Drain-Source V oltage VDS 100 V Gate-Source V oltage VGS ±20 Continuous Drain Current @ VGS=10V , TC=25C ID A Continuous Drain Current @ VGS=10V , TC=70C 22.4 Continuous Drain Current @ VGS=10V , TA=25C 7.9 Continuous Drain Current @ VGS=10V , TA=70C 6.3 Pulsed Drain Current IDM 100 *1 Single Pulse Avalanche Current @ L=0.1mH IAS 30 Avalanche Energy @ L=3mH, ID=10A, VDD=25V EAS 150 *3 mJ Repetitive Avalanche Energy @ L=0.05mH EAR 3 Total Power Dissipation TC=25℃ PD 31 W TC=100℃ 12.4 TA=25℃ PDSM 2.5 *2 TA=70℃ 1.6 *2 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 4 C/W Thermal Resistance, Junction-to-ambient, max RθJA 50 *2 Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. 3. 100% tested by conditions of L=0.1mH, IAS=10A, VGS=10V , VDD=25V , rated 100V Characteristics (TC=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V, ID=250μA VGS(th) 1 - 2.5 VDS = VGS, ID=250μA GFS *1 - 13.3 - S VDS =10V, ID=7A IGSS - - ±100 nA VGS=±20V , VDS=0V IDSS - - 1 μA VDS =80V , VGS =0V - - 10 VDS =80V , VGS =0V , Tj=85C RDS(ON) *1 - 19 25 mΩ VGS =10V, ID=10A - 24 32 VGS =4.5V, ID=10A Dynamic Ciss - 1373 - pF VDS=30V , VGS=0V , f=1MHz Coss - 198 - Crss - 37 -
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 3/10 MTB020N10RV8 CYStek Product Specification Qg *1, 2 - 21.8 - nC VDS=50V , VGS=10V , ID=10A Qgs *1, 2 - 4.2 - Qgd *1, 2 - 3.6 - ns VDS=50V , ID=10A, VGS=10V , RGS=3Ω tr *1, 2 - 7.8 - td(OFF) *1, 2 - 33 - tf *1, 2 - 5.8 - Rg - 1.6 - Ω f=1MHz Source-Drain Diode IS *1 - - 28 A ISM *3 - - 100 VSD *1 - 0.85 1.2 V IS=10A, VGS=0V trr - 26.5 - ns IF=10A, dIF/dt=100A/μs Qrr - 27 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 4/10 MTB020N10RV8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V,8V,7V,6V,5V,4.5V,4V VGS=2.5V 3.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 4 8 12 16 20 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=10A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=10A RDSON @ Tj=25°C : 19 mΩ typ VGS=4.5V, ID=10A RDSON @ Tj=25°C : 24 mΩ typ
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 5/10 MTB020N10RV8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 10 20 30 40 50 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 4 8 12 16 20 24 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=10A VDS=20V, 50V, 80V from left to right Maximum Safe Operating Area 0.01 0.1 100 1000 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TA=25°C, Tj=150°C VGS=10V, RθJA=50°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=50°C/W
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 6/10 MTB020N10RV8 CYStek Product Specification Typical Characteristics(Cont.) Maximum Safe Operating Area 0.01 0.1 100 1000 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=150°C VGS=10V, RθJC=4°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=4°C/W Typical Transfer Characteristics 0 1 2 3 4 5 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Single Pulse Power Rating, Junction to Case 100 200 300 400 500 600 700 800 900 1000 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=4°C/W
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 7/10 MTB020N10RV8 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W Transient Thermal Response Curves 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=4°C/W
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 8/10 MTB020N10RV8 CYStek Product Specification Reel Dimension Carrier Tape Dimension Pin #1
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 9/10 MTB020N10RV8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C745V8 Issued Date : 2018.05.31 Revised Date : 2018.06.01 Page No. : 10/10 MTB020N10RV8 CYStek Product Specification DFN3×3 Dimension DIM Millimeters Inches DIM Millimeters Inches D3 0.13 TYP 0.005 TYP θ 8° 12° 8° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Date Code S S S G D D D D B020 N10R