MTB013N10RJ3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/ 9 MTB013N10RJ3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 BVDSS 100V ID@VGS=10V , TC=25°C 42A ID@VGS=10V , TA=25°C 9A RDS(ON)@VGS=10V , ID=15A 12.5mΩ(typ) Features RDS(ON)@VGS=4.5V , ID=10A 14.5 mΩ(typ)

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • Pb-free lead plating and halogen-free package Symbol Outline TO-252(DPAK)

Ordering Information

MTB013N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTB013N10RJ3 G D S G：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 2/ 9 MTB013N10RJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @TC=25°C, VGS=10V (Note 1) 42 Continuous Drain Current @TC=100°C, VGS=10V (Note 1) ID 29.7 Continuous Drain Current @TA=25°C, VGS=10V (Note 4) 9 Continuous Drain Current @TA=70°C, VGS=10V (Note 4) IDSM 7.2 Pulsed Drain Current @ VGS=10V (Note 3) IDM 168 Avalanche Current @L=0.1mH (Note 5) IAS 42 A Single Pulse Avalanche Energy @ L=0.5mH, ID=33 Amps, VDD=50V (Note 5) EAS 272 mJ TC=25°C (Note 1) 60 TC=100°C (Note 1) PD 30 TA=25°C (Note 2) 2.5 Power Dissipation TA=70°C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C/W *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note2) 50 Thermal Resistance, Junction-to-ambient, max (Note4) RθJA 110 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by condition of VDD=25V , ID=10A, L=2mH, VGS=10V .

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 3/ 9 MTB013N10RJ3 CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 70 - mV/°C Reference to 25°C, ID=250μA VGS(th) 1 - 2.5 V VDS = VGS, ID=250μA *GFS - 23.5 - S VDS =10V , ID=10A IGSS - - ±100 nA VGS=±20V - - 1 VDS =80V , VGS =0V IDSS - - 5 μA VDS =80V , VGS =0V , Tj=55°C - 12.5 16 VGS =10V , ID=15A *RDS(ON) - 14.5 20 mΩ VGS =4.5V , ID=10A Dynamic *Qg - 55 - *Qgs - 9.1 - *Qgd - 9.9 - nC VDD=80V , ID=15A,VGS=10V *td(ON) - 18.2 - *tr - 17.2 - *td(OFF) - 60 - *tf - 8 - ns VDD=50V , ID=15A, VGS=10V , RG=1Ω Ciss - 3050 - Coss - 185 - Crss - 14 - pF VGS=0V , VDS=50V , f=1MHz Source-Drain Diode *IS - - 42 *ISM - - 168 A *VSD - 0.82 1.2 V IS=15A, VGS=0V *trr - 33 - ns *Qrr - 48 - nC VGS=0V , IF=15A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 4/ 9 MTB013N10RJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V, 8V, 7V, 6V, 3.5V VGS=2.5V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 0 1 2 1 4 1 6 1 8 2 0 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=15A RDS( ON)@Tj=25°C : 12.5mΩ VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=15A

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 5/ 9 MTB013N10RJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 1 02 03 04 05 06 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=15A VDS=80V VDS=20V VDS=50V Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=175°C VGS=10V, RθJC=2.5°C/W Single Pulse DC RDSON Limited 100 μs 1ms 10ms 100ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) ID, Maximum Drain Current(A)Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W Single Pulse

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 6/ 9 MTB013N10RJ3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Case 200 400 600 800 1000 1200 1400 1600 1800 2000 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C RθJC=2.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5°C/W

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 7/ 9 MTB013N10RJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 8/ 9 MTB013N10RJ3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 9/ 9 MTB013N10RJ3 CYStek Product Specification TO-252 Dimension Marking: Device Name Date Code B013 N10R □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.