MTB010A03H8 CYSTEKEC | Alldatasheet
Document overview
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Technical content
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package Equivalent Circuit Outline
Ordering Information
MTB 010A0 3H8 -0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN5×6 MTB010A03H8 BV DSS 30V ID @V GS =10V , TC =25ƱC 36A ID @V GS =10V , TC =100ƱC 23A ID @V GS =10V , TA =25ƱC 8.8A ID @V GS =10V , TA =70ƱC 7.0A R DS(ON) @V GS =10V , ID =12A 7.3mΩ(typ) R DS(ON) @V GS =4.5V , ID =7A 9.6mΩ(typ) G ：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1 Pin 1
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 2/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage V DS 30 V Gate-Source V oltage V GS ±20 Continuous Drain Current @TC =25C, VGS =10V (Note 1) ID 36 A Continuous Drain Current @TC =100C, VGS =10V (Note 1) 23 Continuous Drain Current @TA =25C, VGS =10V (Note 2) IDSM 8.8 Continuous Drain Current @TA =70C, VGS =10V (Note 2) 7.0 Pulsed Drain Current @ VGS =10V (Note 3) IDM 144 Avalanche Current @L=0.1mH (Note 3) IAS 30 Single Pulse Avalanche Energy @ L=1mH, ID =12Amps, VDD =15V (Note 5) EAS 72 mJ Repetitive Avalanche Energy (Note 3) EAR 2.5 Power Dissipation TC =25C (Note 1) PD 25 W TC =100C (Note 1) 10 TA =25C (Note 2) PDSM 1.5 TA =70C (Note 2) 1.0 Operating Junction and Storage Temperature Tj, Tstg -55~+150 C *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R θJC 5 C /W Thermal Resistance, Junction-to-ambient, max (Note 4) R θJA 85 Note : 1.The power dissipation PD is based on TJ(MAX) =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR -4 board with 2 oz. copper, in a still air environment with TA =25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on1 in² copper pad of FR -4 board ; 125C/W when mounted on minimum copper pad. 5. 100% tested by conditions of L=0.1mH, IAS =6A, VGS =10V , VDD =15V . Characteristics (Tj=25 C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS 30 - - V V GS =0V , ID =250μA ∆BV DSS /∆Tj - 0.03 - V/C Reference to 25C, ID =250μA V GS(th) 1.0 - 2.5 V V DS = VGS , ID =250μA *G FS - 7.7 - S V DS =10V , ID =3A IGSS - - Ʋ100 nA V GS =Ʋ20V , VDS =0V IDSS - - 1 μA V DS =24V , VGS =0V - - 25 V DS =24V , VGS =0V , Tj=85C
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 3/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary *R DS (ON ) - 7.3 11 m Ω V GS =10V , ID =12A - 9.6 15 V GS =4.5V , ID =7A Dynamic *Qg - 23.8 32 nC V DS =15V , ID =12A, VGS =10V *Qgs - 3.9 - *Qgd - 6.4 - *td(ON) - 11.4 23 ns V DS =15V , ID =1A, VGS =10V , RG =1Ω *tr - 18.2 28 *td(OFF) - 41 53 *tf - 8.6 18 Ciss - 1292 1680 pF V GS =0V , VDS =30V , f=1MHz Co ss - 154 200 Crss - 115 150 Rg - 2.8 - Ω f=1MHz Source-Drain Diode *IS - - 36 A *ISM - - 144 *V SD - 0.72 1 V IS=1A, VGS =0V *trr - 11.7 - ns V GS =0V , IF=5A, dIF/dt=100A/μs *Qrr - 5.7 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2% Recommended Soldering Footprint unit : mm
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 4/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Recommended Stencil Design Note : 1. Stencil thickness 5 mil (0.127mm) 2. May need to be adjusted to specific requirements.
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 5/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Typical Characteristics Typical Output Characteristics 120 150 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V VGS=4V VGS=5V VGS=3.5V VGS=3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( ƱC) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Curre nt 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State œeŴŪŴŵaůceĩŮΩĪ VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 4 8 12 16 20 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25ƱC Tj=150ƱC Static Drain-Source On-State Resistance vs Gate-Sou rce Voltage 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- Ŕŵaŵe œeŴŪŴŵaůceĩŮΩĪ ID=12A Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( ƱC) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=12A RDS(ON)@ŕū=ij5ƱC : 7.3ŮΩ ŵyp
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 6/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Typical Characteristics (Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( ƱC) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed ŕa=ij5ƱC Gate Charge Characteristics 0 4 8 12 16 20 24 28 32 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) VDS=15V ID=12A Maximum Safe Operating Area 0.01 0.1 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TC=ij5ƱC, ŕū=IJ5ıƱ, ŗGS=10V RθJC=85ƱCİŘ, ŔŪůgŭe PŶŭŴe Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction ŕeŮpeųaŵŶųeĩƱCĪ ID, Maximum Drain Current(A)VGS=10V, RθJA=85ƱCİŘ
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 7/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Typical Characteristics(Cont.) Typical Transfer Characteristics 120 150 0 1 2 3 4 5 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 100 120 140 160 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=IJ5ıƱC TA=ij5ƱC RθJC=85ƱCİŘ Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=85 ƱC/W
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 8/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Reel Dimension Carrier Tape Dimension Pin #1
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 9/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.
CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 10/ 10 MTB010A03H8 Preliminary CYStek Product Specification pPreliminary DFN5×6 Dimension DIM Millimeters Inches DIM Millimeters Inches D3 4.824 4.976 0.190 0.196 θ 10Ʊ 12Ʊ 10Ʊ 12Ʊ Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead power pak Plastic Package CYStek Package Code: H8 Date Code Device Name 8-Lead DFN5×6 Plastic Package B010 A03