MTA7D0N01AV8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTA7D0N01AV8 DFN3×3 Pin 1 G：Gate D：Drain S：Source

Ordering Information

MTA7D0N01A V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 2/9 MTA7D0N01AV8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Limits Unit Drain-Source V oltage VDS 16 Gate-Source V oltage VGS ±10 V Continuous Drain Current @ VGS=10V , TC=25°C 28 Continuous Drain Current @ VGS=10V , TC=100°C ID 17.7 Continuous Drain Current @ VGS=10V , TA=25°C 12.5 Continuous Drain Current @ VGS=10V , TA=70°C IDSM 10 Pulsed Drain Current IDM 112 *1 Avalanche Current IAS 21 A Avalanche Energy @ L=0.1mH, ID=21A, RG=25Ω EAS 22 mJ TC=25℃ 12.5 TC=100℃ PD 5 TA=25℃ 2.5 *2 Total Power Dissipation TA=70℃ PDSM 1.6 *2 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 10 Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *2 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice Rth,j-a will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 16 - - VGS=0V , ID=250μA VGS(th) 0.5 0.73 1.0 V VDS = VGS, ID=250μA GFS *1 - 18 - S VDS =5V , ID=11A IGSS - - ±100 nA VGS=±8V - - 1 VDS =16V , VGS =0V IDSS - - 5 μA VDS =16V , VGS =0V , Tj=55°C - 5.9 8.5 VGS =10V , ID=11A - 6.9 9.8 VGS =4.5V , ID=8A RDS(ON) *1 - 8.4 12 mΩ VGS =3V , ID=5A Dynamic Ciss - 853 - Coss - 209 - Crss - 171 - pF VDS=10V , VGS=0V , f=1MHz Qg *1, 2 8.5 11.5 15 Qgs *1, 2 - 1.9 - Qgd *1, 2 - 3.9 - nC VDS=15V , VGS=4.5V , ID=20A

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 3/9 MTA7D0N01AV8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions tr *1, 2 - 22.4 33.6 tf *1, 2 - 18.4 27.6 ns VDS=12.5V , ID=20A, VGS=4.5V , RGS=2Ω tr *1, 2 - 14.4 21.6 ns VDS=15V , ID=20A, VGS=10V , RGS=3Ω Rg 2.5 4.0 5 Ω f=1MHz Source-Drain Diode IS *1 - - 28 A VSD *1 - 0.9 1.2 V IS=16A, VGS=0V trr - 12.8 - ns Qrr - 5.8 - nC IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 4/9 MTA7D0N01AV8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 V DS, Drain-Source Voltage(V) ID, Drain Current(A) 2.5V 3.5V VGS=2V 10V,9V,8V,7V,6V,5V,4V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=3VVGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 0 1 2 1 4 1 6 1 8 2 0 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=11A RDSON@Tj=25°C : 5.9mΩ typ. VGS=4.5V, ID=8A RDSON@Tj=25°C : 6.9mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=11A

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 5/9 MTA7D0N01AV8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0369 1 2 1 5 Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold VoltageID=250μA ID=1mA VDS, Drain-Source Voltage(V) Capacitance---(pF) Ciss Coss Crss Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 4 8 1 21 62 02 4 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=20A VDS=15V VDS=12.5V Maximum Safe Operating Area 0.1 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limit TA=25°C, Tj=150°C, VGS=10V RθJA=50°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junctione Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=10V, RθJA=50°C/W Single Pulse

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 6/9 MTA7D0N01AV8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=5V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=50°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 7/9 MTA7D0N01AV8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 8/9 MTA7D0N01AV8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 9/9 MTA7D0N01AV8 CYStek Product Specification DFN3×3 Dimension Marking: 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Date Code S S S G D D D D A7D0 N01A *: Typical E2 1.535 1.935 0.060 0.076 θ 9° 13° 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.