MTA4ATF1G64HZ MICRON | Alldatasheet

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CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. DDR4 SDRAM SODIMM Addendum MTA4ATF1G64HZ – 8GB Information provided here is in addition to or super- sedes information provided in the Micron DDR4 SODIMM Core data sheet.

  • DDR4 functionality and operations supported as defined in the component data sheet
  • Features and specifications supported in the Micron DDR4 SODIMM Core data sheet
  • 260-pin, small-outline dual in-line memory module (SODIMM)
  • Fast data transfer rate: PC4-2666, PC4-3200
  • 8GB (1 Gig x 64)
  • Data bus inversion (DBI) for data bus
  • Single-rank
  • On-board I2C serial presence-detect (SPD) EEPROM
  • 8 internal banks; 2 groups of 4 banks each Figure 1: 260-Pin SODIMM Options Marking
  • Operating temperature – Commercial (0°C ≤ TOPER ≤ 95°C) None
  • Package – 260-pin DIMM (halogen-free) Z
  • Frequency/CAS latency – 0.625ns @ CL = 22 (DDR4-3200) -3G2 – 0.75ns @ CL = 19 (DDR4-2666) -2G6 Primary Side Secondary Side U1 U2 U4 U5 No Components Back Side of Module Table 1: Addressing Parameter 8GB Row address 128K A[16:0] Column address 1K A[9:0] Device bank group address 2 BG0 Device bank address per group 4 BA[1:0] Device configuration 16Gb (1 Gig x 16), 8 banks Module rank address CS0_n atf4c1gx64hz.ditamap Page 1

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM Table 2: Part Numbers and Timing Parameters – 8GB Modules Base device: MT40A1G16,1 16Gb DDR4 SDRAM Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA4ATF1G64HZ-3G2F1. Part Number2 Module Density Configuration Module Bandwidth Memory Clock/Data Rate Clock Cycles (CL-nRCD-nRP) MTA4ATF1G64HZ-3G2__ 8GB 1 Gig x 64 25.6 GB/s 0.625ns/3200 MT/s 22-22-22 MTA4ATF1G64HZ-2G6__ 8GB 1 Gig x 64 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 atf4c1gx64hz.ditamap Page 2

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi- cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib- utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non-automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron compo- nent for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsid- iaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or envi- ronmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly autho- rized representative. atf4c1gx64hz.ditamap Page 3

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM DQ Map DQ Map Table 3: Component-to-Module DQ Map Component Reference Number Component DQ Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number U1 00 3 21 U2 00 19 63 01 1 7 01 17 49 02 2 20 02 18 62 03 0 8 03 16 50 04 7 17 04 23 59 05 5 3 05 21 45 06 6 16 06 22 58 07 4 4 07 20 46 08 10 41 08 26 83 09 8 28 09 24 70 10 11 42 10 27 84 11 9 29 11 25 71 12 14 38 12 30 79 13 13 25 13 29 67 14 15 37 14 31 80 15 12 24 15 28 66 U4 00 35 186 U5 00 51 229 01 33 173 01 49 215 02 34 187 02 50 228 03 32 174 03 48 216 04 39 182 04 55 225 05 37 169 05 53 212 06 38 183 06 54 224 07 36 170 07 52 211 08 42 207 08 58 249 09 40 195 09 56 237 10 43 208 10 59 250 11 41 194 11 57 236 12 46 203 12 62 245 13 45 190 13 61 233 14 47 204 14 63 246 15 44 191 15 60 232 atf4c1gx64hz.ditamap Page 4

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM IDD Specifications IDD Specifications Table 4: DDR4 IDD Specifications and Conditions (0° ≤ TC ≤ 85°) – 8GB (Die Revision E) Values are for the MT40A1G16 DDR4 SDRAM only and are computed from values specified in the 16Gb (1 Gig x 16) compo- nent data sheet Notes: 1. When TC > 85°C, the IDD and IPP values must be derated. Refer to the base device data sheet IDD and IPP specification tables for derating values for the applicable die-revision. Parameter Symbol 3200 2666 Units One bank ACTIVATE-PRECHARGE current IDD0 280 272 mA One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current IPP0 16 16 mA One bank ACTIVATE-READ-PRECHARGE current IDD1 336 328 mA Precharge standby current IDD2N 180 172 mA Precharge standby ODT current IDD2NT 232 224 mA Precharge power-down current IDD2P 152 152 mA Precharge quiet standby current IDD2Q 168 168 mA Active standby current IDD3N 248 240 mA Active standby IPP current IPP3N 8 8 mA Active power-down current IDD3P 204 196 mA Burst read current IDD4R 772 1052 mA Burst write current IDD4W 564 852 mA Burst refresh current (1x REF) IDD5R 272 272 mA Burst refresh IPP current (1x REF) IPP5R 16 16 mA Self refresh current: Normal temperature range (0°C to 85°C) IDD6N 212 212 mA Self refresh current: Extended temperature range (0°C to 95°C) IDD6E 360 452 mA Self refresh current: Reduced temperature range (0°C to 45°C) IDD6R 80 80 mA Auto self refresh current (25°C) IDD6A 44 44 mA Auto self refresh current (45°C) IDD6A 80 80 mA Auto self refresh current (75°C) IDD6A 204 204 mA Auto self refresh current (95°C) IDD6A 360 452 mA Auto self refresh IPP current IPP6X 24 24 mA Bank interleave read current IDD7 800 944 mA Bank interleave read IPP current IPP7 52 36 mA Maximum power-down current IDD8 144 144 mA atf4c1gx64hz.ditamap Page 5

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM IDD Specifications Table 5: DDR4 IDD Specifications and Conditions (0° ≤ TC ≤ 85°) – 8GB (Die Revision B) Values are for the MT40A1G16 DDR4 SDRAM only and are computed from values specified in the 16Gb (1 Gig x 16) compo- nent data sheet Notes: 1. When TC > 85°C, the IDD and IPP values must be derated. Refer to the base device data sheet IDD and IPP specification tables for derating values for the applicable die-revision. Parameter Symbol 3200 2666 Units One bank ACTIVATE-PRECHARGE current IDD0 312 304 mA One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current IPP0 20 20 mA One bank ACTIVATE-READ-PRECHARGE current IDD1 396 388 mA Precharge standby current IDD2N 208 200 mA Precharge standby ODT current IDD2NT 260 252 mA Precharge power-down current IDD2P 172 172 mA Precharge quiet standby current IDD2Q 188 188 mA Active standby current IDD3N 324 316 mA Active standby IPP current IPP3N 12 12 mA Active power-down current IDD3P 288 280 mA Burst read current IDD4R 1304 1136 mA Burst write current IDD4W 1096 960 mA Burst refresh current (1x REF) IDD5R 316 308 mA Burst refresh IPP current (1x REF) IPP5R 20 20 mA Self refresh current: Normal temperature range (0°C to 85°C) IDD6N 268 268 mA Self refresh current: Extended temperature range (0°C to 95°C) IDD6E 484 484 mA Self refresh current: Reduced temperature range (0°C to 45°C) IDD6R 116 116 mA Auto self refresh current (25°C) IDD6A 40 40 mA Auto self refresh current (45°C) IDD6A 116 116 mA Auto self refresh current (75°C) IDD6A 244 244 mA Auto self refresh current (95°C) IDD6A 484 484 mA Auto self refresh IPP current IPP6X 44 44 mA Bank interleave read current IDD7 1072 1040 mA Bank interleave read IPP current IPP7 44 44 mA Maximum power-down current IDD8 160 160 mA atf4c1gx64hz.ditamap Page 6

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM IDD Specifications Table 6: DDR4 IDD Specifications and Conditions (0° ≤ TC ≤ 85°) – 8GB (Die Revision F) Values are for the MT40A1G16 DDR4 SDRAM only and are computed from values specified in the 16Gb (1 Gig x 16) compo- nent data sheet Notes: 1. When TC > 85°C, the IDD and IPP values must be derated. Refer to the base device data sheet IDD and IPP specification tables for derating values for the applicable die-revision. Parameter Symbol 3200 2666 Units One bank ACTIVATE-PRECHARGE current IDD0 280 272 mA One bank ACTIVATE-PRECHARGE, Word Line Boost, IPP current IPP0 16 16 mA One bank ACTIVATE-READ-PRECHARGE current IDD1 336 328 mA Precharge standby current IDD2N 180 172 mA Precharge standby ODT current IDD2NT 232 224 mA Precharge power-down current IDD2P 152 152 mA Precharge quiet standby current IDD2Q 168 168 mA Active standby current IDD3N 248 240 mA Active standby IPP current IPP3N 8 8 mA Active power-down current IDD3P 204 196 mA Burst read current IDD4R 772 668 mA Burst write current IDD4W 564 484 mA Burst refresh current (1x REF) IDD5R 272 272 mA Burst refresh IPP current (1x REF) IPP5R 16 16 mA Self refresh current: Normal temperature range (0°C to 85°C) IDD6N 212 212 mA Self refresh current: Extended temperature range (0°C to 95°C) IDD6E 360 360 mA Self refresh current: Reduced temperature range (0°C to 45°C) IDD6R 80 80 mA Auto self refresh current (25°C) IDD6A 44 44 mA Auto self refresh current (45°C) IDD6A 80 80 mA Auto self refresh current (75°C) IDD6A 204 204 mA Auto self refresh current (95°C) IDD6A 360 360 mA Auto self refresh IPP current IPP6X 24 24 mA Bank interleave read current IDD7 800 760 mA Bank interleave read IPP current IPP7 52 52 mA Maximum power-down current IDD8 144 144 mA atf4c1gx64hz.ditamap Page 7

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram Note: 1. The ZQ ball on each DDR4 component is connected to an external 240Ω ±1% resistor that is tied to ground. It is used for the calibration of the component’s ODT and output driver. DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 CS_n CS_n VSS VSS VSS VSS CS0_n DQS0_t DQS0_c DM0_n/DBI0_n DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ DQS_t DQS_c DM_n/DBI_n DQ DQ DQ DQ DQ DQ DQ DQ ZQ CS_n CS_n DQS1_t DQS1_c DM1_n/DBI1_n DQS2_t DQS2_c DM2_n/DBI2_n DQS3_t DQS3_c DM3_n/DBI3_n DQS4_t DQS4_c DM4_n/DBI4_n DQS6_t DQS6_c DM6_n/DBI6_n DQS7_t DQS7_c DM7_n/DBI7_n DQS5_t DQS5_c DM5_n/DBI5_n Rank 0 CK0_t CK0_c Vref CA Vss DDR4 SDRAM DDR4 SDRAM Vdd Vddspd SPD EEPROM Vtt DDR4 SDRAM DDR4 SDRAMVpp Clock, control, command, and address line terminations: SPD EEPROM A1 A2 SA0 SDASCL EVT Control, command, and address termination DDR4 SDRAM VTT CK0_t CK0_c DDR4 SDRAM VDD BA[1:0] BG[1:0] ACT_n A[13:0] RAS_n/A16 CAS_n/A15 WE_n/A14 CKE0 ODT0 RESET PAR_IN ALERT_CONN BA[1:0]: DDR4 SDRAM BG[1:0]: DDR4 SDRAM ACT_n: DDR4 SDRAM A[13:0]: DDR4 SDRAM RAS_n/A16: DDR4 SDRAM CAS_n/A15: DDR4 SDRAM WE_n/A14: DDR4 SDRAM CKE0: Rank 0 ODT0: Rank 0 RESET_n: DDR4 SDRAM PAR: DDR4 SDRAM ALERT_DRAM: DDR4 SDRAM CS0_n, BA[1:0], BG[1:0], ACT_n, A[13:0], RAS_n/A16, CAS_n/A15, WE_n/A14, CKE0, ODT0 Vss Vss SA1 CK1_t CK1_c atf4c1gx64hz.ditamap Page 8

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM Module Dimensions Module Dimensions Figure 3: 260-Pin DDR4 SODIMM - PCB 2874 Notes: 1. All dimensions are in millimeters; MAX/MIN or typical (TYP) where noted. 2. Tolerance on all dimensions ±0.15mm unless otherwise specified. 3. The dimensional diagram is for reference only. PIN 1 0.5 TYP 0.35 TYP PIN 259 PIN 260 PIN 2 2.55 TYP 30.0 ± 0.15 Secondary Side 28.5 TYP 35.5 TYP 2.5 TYP 1.0 TYP 1.75 TYP (2X) 18.0 TYP

4.0 TYP (2X)

69.6 ± 0.15 U1 U2 U4 U5 No Components Back Side of Module Primary Side

6.0 TYP

(2X)

1.75 TYP (2X)

1.5 TYP

(2X) 2.5 MAX 1.20 ± 0.1 atf4c1gx64hz.ditamap Page 9

CCM005-341111752-10532 Micron Technology, Inc. reserves the right to change products or specifications without notice. atf4c1gx64hz.pdf - Rev. I 08/2021 EN © 2019 Micron Technology, Inc. All rights reserved. 8GB (x64, SR) 260-Pin DDR4 SODIMM Module Dimensions Figure 4: 260-Pin DDR4 SODIMM - PCB 3222 Notes: 1. All dimensions are in millimeters; MAX/MIN or typical (TYP) where noted. 2. Tolerance on all dimensions ±0.15mm unless otherwise specified. 3. The dimensional diagram is for reference only. PIN 1 0.5 TYP 0.35 TYP PIN 259 PIN 260 PIN 2 2.55 TYP 30.0 ± 0.15 Secondary Side 28.5 TYP 35.5 TYP 2.5 TYP 1.0 TYP 1.75 TYP (2X) 18.0 TYP 69.6 ± 0.15 U1 U2 U4 U5 No Components Back Side of Module Primary Side (2X)

2.0 TYP (2X)

1.8 TYP

(2X) 2.5 MAX 1.20 ± 0.1 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006 208-368-4000, micron.com/support Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. atf4c1gx64hz.ditamap Page 10