MTA025A01N6 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Simple drive requirement
- Low gate charge
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package Equivalent Circuit Outline
Ordering Information
(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTA025A01N6 SOT-26 G：Gate S：Source D：Drain BVDSS 14V ID @ TA=25 °C 5.4A(VGS=4.5V, TA=25°C) RDSON(TYP.) 16.8mΩ(VGS=4.5V, ID=3.4A) 21.0mΩ(VGS=2.5V, ID=3A) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name Pin#1
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 2/9 MTA025A01N6 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS 14 V Gate-Source V oltage VGS ±8 Continuous Drain Current @TA=25 C (Note 1) ID 5.4 A Continuous Drain Current @TA=70 C (Note 1) 4.3 Pulsed Drain Current (Note 2) IDM 20 Total Power Dissipation (Note 1) Linear Derating Factor PD 1.14 W
0.01 W / C
Operating Junction and Storage Temperature Tj, Tstg -55~+150 C Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 2.Pulse width limited by maximum junction temperature. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 80 C/W Thermal Resistance, Junction-to-ambient, max RθJA 110 (Note ) Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 14 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 7 - mV/C Reference to 25C, ID=1mA VGS(th) 0.4 - 1.0 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±8V, VDS=0V IDSS - - 1 μA VDS=12V , VGS=0V - - 10 VDS=10V , VGS=0V , Tj=70C *RDS(ON) - 16.8 25 m VGS=4.5V, ID=3.4A - 21.0 33 VGS=2.5V, ID=3A *GFS - 6.4 - S VDS=5V, ID=3A Dynamic Ciss - 451 - pF VDS=10V , VGS=0V , f=1MHz Coss - 112 - Crss - 99 - *td(ON) - 6.4 - ns VDS=10V , ID=1A, VGS=5V , RG=3.3Ω *tr - 19.8 - *td(OFF) - 31.2 - *tf - 10.2 -
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 3/9 MTA025A01N6 CYStek Product Specification *Qg - 7.5 - nC VDS=10V , ID=3A, VGS=4.5V *Qgs - 0.7 - *Qgd - 2.5 - Rg - 2.3 - Ω f=1MHz Source-Drain Diode *VSD - 0.83 1.2 V VGS=0V , IS=2.7A *trr - 7 - ns IF=3A, VGS=0V , dIF/dt=100A/μs *Qrr - 2 - nC *Pulse Test : Pulse Width 300μs, Duty Cycle2% Recommended Soldering Footprint
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 4/9 MTA025A01N6 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) VGS=1.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=1.8V VGS=4.5V VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 0 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=3.4A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=3.4A RDS(ON)@Tj=25°C : 16.8mΩ typ.
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 5/9 MTA025A01N6 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 3 6 9 12 15 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), NormalizedThreshold Voltage ID=250μA ID=1mA Single Pulse Power Rating, Junction to Ambient 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=110°C/W Gate Charge Characteristics 0 2 4 6 8 10 12 14 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=3A VDS=10V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=4.5V, RθJA=110°C/W Single Pulse RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4.5V, RθJA=110°C/W
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 6/9 MTA025A01N6 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 0.5 1 1.5 2 2.5 3 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=10V VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=110°C/W
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 7/9 MTA025A01N6 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 8/9 MTA025A01N6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C073N6 Issued Date : 2018.10.18 Revised Date : Page No. : 9/9 MTA025A01N6 CYStek Product Specification SOT-26 Dimension DIM Millimeters Inches DIM Millimeters Inches D 2.820 3.020 0.111 0.119 θ 0 8 0 8 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : Lead : Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 6 5 4 2 3 1 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Gate1 (G1) Pin 2. Source 2 (S2) Pin 3. Gate 2 (G2) Pin 4. Drain 2 (D2) Pin 5. Source 1 (S1) Pin 6. Drain 1 (D1) ATA1 □□□□ Device Name Date Code