MT3S35T TOSHIBA | Alldatasheet

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION

FEATURES

/Gb7/G20Low Noise Figure :NF=1.4dB (@f=2GHz) /Gb7/G20High Gain:|S21e|2=13.0dB (@f=2GHz) Marking Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage V CBO 8 V Collector-Emitter voltage V CEO 4.5 V Emitter-Base voltage V EBO 1.5 /G20 V Collector-Current I C 24 mA Base-Current I B 12 mA Collector Power dissipation P C 100 mW Junction temperature T j 150 °C Storage temperature Range T stg −55~150 °C Unit: mm TESM JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight:0.0022g (typ.) 1 2 Q 2

Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition Frequency fT V CE=3V, IC=10mA, f=2GHz 16 20 - GHz |S21e|2(1) V CE=3V, IC=10mA, f=1GHz 16 18 - dB Insertion Gain |S21e|2(2) V CE=3V, IC=10mA, f=2GHz 11 13 - dB NF(1) V CE=3V, IC=2mA, f=1GHz - 1.1 - dB Noise Figure NF(2) V CE=3V, IC=2mA, f=2GHz - 1.4 1.9 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector Cut-off Current I CBO V CB=8V, IE=0 - - 1 µA Emitter Cut-off Current I EBO V EB=1V, IC=0 - - 1 µA DC Current Gain hFE V CE=3V, IC=10mA 70 - 140 - Output Capacitance C ob V CB=1V, IE=0, f=1MHz - 0.46 0.75 pF Reverse Transistor Capacitance C re V CB=1V, IE=0, f=1MHz (Note 1) - 0.21 0.4 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle.

|S21e|2-IC VCE=3V f=1GHz Ta=25℃ 1 10 100 COLLECTOR CURRENT I C(mA) INSERTION GAIN |S21e| 2 (dB) |S21e|2-IC VCE=3V f=2GHz Ta=25℃ 1 10 100 COLLECTOR CURRENT I C(mA) INSERTION GAIN |S21e| 2 (dB) fT-IC VCE=3V f=2GHz Ta=25℃ 1 10 100 COLLECTOR CURRENT I C(mA) TRANSITION FREQUENCY fT(GHz) Cre,Cob-V CB Cob Cre IE=0 f=1MHz Ta=25℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.1 1 10 COLLECTOR-BASE VOLTAGE V CB(V) REVERSE TRANSFER CAPACITANCE Cre(pF) OUTPUT CAPACITANCE Cob(pF) NF,Ga-I C NF f=2GHz VCE=3V Ta=25℃ Ga 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 11 0 1 0 0 COLLECTOR CURRENT I C(mA) NOISE FIGURE NF(dB) ASSOCIATED GAIN Ga(dB) PC-Ta 100 120 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta( ℃) COLLECTOR POWER DISSIPATION PC(mW)

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE