MT46H16M16 MICRON | Alldatasheet
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Technical content
Features
- V DD = +1.8V ±0.1V , VDDQ = +1.8V ±0.1V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge-aligned with data for READs; center- aligned with data for WRITEs Four internal banks for concurrent operation Data masks (DM) for masking write data–one mask per byte Programmable burst lengths: 2, 4, 8, 16 or full page Concurrent auto precharge option is supported Auto refresh and self refresh modes 1.8V LVCMOS compatible inputs On-chip temperature sensor to control refresh rate Partial array self refresh (PASR) Deep power-down (DPD) Selectable output drive (DS) Clock stop capability Notes:1. Only available for x16 configuration. 2. Only available for x32 configuration. Options Marking V DD/VDDQ 1.8V/1.8V H Configuration 16 Meg x 16 (4 Meg x 16 x 4 banks) 8 Meg x 32 (2 Meg x 32 x 4 banks) 16M16 8M32 P l a s t i c P a c k a g e 60-Ball VFBGA 90-Ball VFBGA 2 TBD Timing – Cycle Time 6 n s @ C L = 3 7.5ns @ CL = 3 10ns @ CL = 3 -75 -10 Operating Temperature Range Commercial (0° to +70°C) Industrial (-40°C to +85°C) None IT Figure 1: 60-Ball VFBGA Assignment Table 1: Configuration Addressing Architecture 16 Meg x 16 8 Meg x 32 Configuration 4 Meg x 16 x 4 2 Meg x 32 x 4 Refresh Count 8K 4K Row Addressing 8K (A0–A12) 4K (A0–A11) Bank Addressing 4 (BA0, BA1) 4 (BA0, BA1) Column Addressing 1K (A0–A9) 1K (A0–A9) 1234 6789 5 A B C D E F G H J K VSSQ DQ14 DQ12 DQ10 DQ8 NC CK# A12 V SS VDDQ VSSQ VDDQ VSSQ VSS CKE VSS DQ15 DQ13 DQ11 DQ9 UDQS UDM CK A11 V DDQ DQ1 DQ3 DQ5 DQ7 A13, NC WE# CS# A10/AP DQ0 DQ2 DQ4 DQ6 LDQS LDM CAS# BA0 V DD VSSQ VDDQ VSSQ VDDQ VDD RAS# BA1 VDD
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. Advance: This data sheet contains initial descriptions of products still under development. 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Preview PDF: 09005aef818ff781/Source: 09005aef818ff799 Micron Technology, Inc., reserves the right to change products or specifications without notice. MT46H16M16.fm - Rev. A 03/05 EN 2 ©2005 Micron Technology, Inc. All rights reserved.
PDF: 09005aef818ff781/Source: 09005aef818ff799 Micron Technology, Inc., reserves the right to change products or specifications without notice. MT46H16M16.fm - Rev. A 03/05 EN 3 ©2005 Micron Technology, Inc. All rights reserved. 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Preview