MT16HTS25664HY-2GB

MT16HTS25664HY MICRON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 14

Technical content

Features

• 200-pin, small-outline dual in-line memory module (SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300
• 2GB (256 Meg x 64) or 4GB (512 Meg x 64)
• VDD = VDDQ 1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera- tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual-rank, TwinDie™ (2COB) DRAM devices Figure 1: 200-Pin SODIMM (MO-224 R/C D) Module height: 30mm (1.18in) Options Marking
• Operating temperature1 – Commercial (0°C ≤ TA ≤ +70°C) None – Industrial (–40°C ≤ TA ≤ +85°C) I
• Package – 200-pin DIMM (lead-free) Y
• Frequency/CL – 2.5ns @ CL 6 (DDR2-800) -800 – 3.0ns @ CL = 5 (DDR2-667) -667 – 3.75ns @ CL = 4 (DDR2-533) -53E – 5.0ns @ CL = 3 (DDR2-400)3 -40E Notes: 1. Contact Micron for industrial temperature module offerings 2. CL = CAS (READ) latency. 3. Not recommended for new designs. Table 1: Key Timing Parameters Speed Grade Industry Nomenclature Data Rate (MT/s) tRCD (ns) tRP (ns) tRC (ns)CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 – 667 553 400 15 15 55 -53E PC2-4200 – – 553 400 15 15 55 -40E PC2-3200 – – 400 400 15 15 55 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM

PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Addressing Parameter 2GB 4GB Refresh count 8K 8K Row address 16K A[13:0] 32K A[14:0] Device bank address 8 BA[2:0] 8 BA[2:0] Device configuration 2Gb TwinDie (128 Meg x 8) 4Gb TwinDie (256 Meg x 8) Column address 1K A[9:0] 1K A[9:0] Module rank address 2 S#[1:0] 2 S#[1:0] Table 3: Part Numbers and Timing Parameters – 2GB Modules (End of Life) Base device: MT47H256M8THJ,1 2Gb TwinDie DDR2 SDRAM Part Number2 Module Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) MT16HTS25664H(I)Y-800__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTS25664H(I)Y-667__ 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT16HTS25664H(I)Y-53E__ 2GB 256 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT16HTS25664H(I)Y-40E__ 2GB 256 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Table 4: Part Numbers and Timing Parameters – 4GB Modules Base device: MT47H512M8THM,1 4Gb TwinDie DDR2 SDRAM Part Number2 Module Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) MT16HTS51264H(I)Y-800__ 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTS51264H(I)Y-667__ 4GB 512 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 MT16HTS51264H(I)Y-53E__ 4GB 512 Meg x 64 4.3 GB/s 3.75ns/553 MT/s 4-4-4 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTS51264HY-667A1. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Table 5: Pin Assignments 200-Pin DDR2 SODIMM Front 200-Pin DDR2 SODIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol

1 VREF 51 DQS2 101 A1 151 DQ42 2 VSS 52 DM2 102 A0 152 DQ46

3 VSS 53 VSS 103 VDD 153 DQ43 4 DQ4 54 VSS 104 VDD 154 DQ47

5 DQ0 55 DQ18 105 A10 155 VSS 6 DQ5 56 DQ22 106 BA1 156 VSS

7 DQ1 57 DQ19 107 BA0 157 DQ48 8 VSS 58 DQ23 108 RAS# 158 DQ52

9 VSS 59 VSS 109 WE# 159 DQ49 10 DM0 60 VSS 110 S0# 160 DQ53

11 DQS0# 61 DQ24 111 VDD 161 VSS 12 VSS 62 DQ28 112 VDD 162 VSS

13 DQS0 63 DQ25 113 CAS# 163 NC 14 DQ6 64 DQ29 114 ODT0 164 CK1

15 VSS 65 VSS 115 S1# 165 VSS 16 DQ7 66 VSS 116 A13 166 CK1#

17 DQ2 67 DM3 117 VDD 167 DQS6# 18 VSS 68 DQS3# 118 VDD 168 VSS

19 DQ3 69 NC 119 ODT1 169 DQS6 20 DQ12 70 DQS3 120 NC 170 DM6

21 VSS 71 VSS 121 VSS 171 VSS 22 DQ13 72 VSS 122 VSS 172 VSS

23 DQ8 73 DQ26 123 DQ32 173 DQ50 24 VSS 74 DQ30 124 DQ36 174 DQ54

25 DQ9 75 DQ27 125 DQ33 175 DQ51 26 DM1 76 DQ31 126 DQ37 176 DQ55

27 VSS 77 VSS 127 VSS 177 VSS 28 VSS 78 VSS 128 VSS 178 VSS

29 DQS1# 79 CKE0 129 DQS4# 179 DQ56 30 CK0 80 CKE1 130 DM4 180 DQ60

31 DQS1 81 VDD 131 DQS4 181 DQ57 32 CK0# 82 VDD 132 VSS 182 DQ61

33 VSS 83 NC 133 VSS 183 VSS 34 VSS 84 NC 134 DQ38 184 VSS

35 DQ10 85 BA2 135 DQ34 185 DM7 36 DQ14 86 NC/A141 136 DQ39 186 DQS7#

37 DQ11 87 VDD 137 DQ35 187 VSS 38 DQ15 88 VDD 138 VSS 188 DQS7

39 VSS 89 A12 139 VSS 189 DQ58 40 VSS 90 A11 140 DQ44 190 VSS

41 VSS 91 A9 141 DQ40 191 DQ59 42 VSS 92 A7 142 DQ45 192 DQ62

43 DQ16 93 A8 143 DQ41 193 VSS 44 DQ20 94 A6 144 VSS 194 DQ63

45 DQ17 95 VDD 145 VSS 195 SDA 46 DQ21 96 VDD 146 DQS5# 196 VSS

47 VSS 97 A5 147 DM5 197 SCL 48 VSS 98 A4 148 DQS5 198 SA0

49 DQS2# 99 A3 149 VSS 199 VDDSPD 50 NC 100 A2 150 VSS 200 SA1

Note: 1. Pin 86 is NC for 2GB and A14 for 4GB. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Pin Assignments PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column ad- dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments Table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, and MR3) is loaded during the LOAD MODE command. CKx, CK#x Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circui- try and clocks on the DDR2 SDRAM. DMx, Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write ac- cess. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termi- nation resistance internal to the DDR2 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z. S#x Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the SPD EEPROM address range on the I2C bus. SCL Input Serial clock for SPD EEPROM: Used to synchronize communication to and from the SPD EEPROM on the I2C bus. CBx I/O Check bits. Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQS#x I/O Data strobe: Travels with the DQ and is used to capture DQ at the DRAM or the con- troller. Output with read data; input with write data for source synchronous opera- tion. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Pin Descriptions PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Table 6: Pin Descriptions (Continued) Symbol Type Description SDA I/O Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on the I2C bus. RDQSx, RDQS#x Output Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS is output with read data only and is ignored during write data. When RDQS is disa- bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled and differential data strobe mode is enabled. Err_Out# Output (open drain) Parity error output: Parity error found on the command and address bus. VDD/VDDQ Supply Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the mod- ule VDD. VDDSPD Supply SPD EEPROM power supply: 1.7–3.6V. VREF Supply Reference voltage: VDD/2. VSS Supply Ground. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. NU – Not used: These pins are not used in specific module configurations/operations. RFU – Reserved for future use. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Pin Descriptions PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Figure 2: Functional Block Diagram DQ DQ DQ DQ DQ DQ DQ DQ DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 U1b DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ U1t DQ DQ DQ DQ DQ DQ DQ DQ DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U7b DQ DQ DQ DQ DQ DQ DQ DQ U7t DM CS# DQ DQS# DM CS# DQ DQS# DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 U9b DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ U9t DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 U8b DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ U8t DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 U2b DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ U2t DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 U3b DQ DQ DQ DQ DQ DQ DQ DQ U3t DM CS# DQ DQS# DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 U4b DQ DQ DQ DQ DQ DQ DQ DQ U4t DM CS# DQ DQS# DM CS# DQ DQS# DQ DQ DQ DQ DQ DQ DQ DQ DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 U6b DQ DQ DQ DQ DQ DQ DQ DQ U6t DM CS# DQ DQS# DM CS# DQ DQS# DQS0# DQS0 DM0 S0# S1# DQS1# DQS1 DM1 DQS2# DQS2 DM2 DQS3# DQS3 DM3 DQS4# DQS4 DM4 DQS5# DQS5 DM5 DQS6# DQS6 DM6 DQS7# DQS7 DM7 U1, U2, U9, U8CK0 CK0# U3, U4, U6, U7CK1 CK1# SPD EEPROM A1 A2 SA0 SA1 SA2 SDASCL WP V DDSPD V DD V REF V SS SPD EEPROM DDR2 SDRAM DDR2 SDRAM DDR2 SDRAM, EEPROM BA0–BA2 A0–A13/A14 RAS# CAS# WE# CKE0 CKE1 ODT0 ODT1 BA0–BA2: DDR2 SDRAM A0–A13/A14: DDR2 SDRAM RAS#: DDR2 SDRAM CAS#: DDR2 SDRAM WE#: DDR2 SDRAM CKE0: Rank 0 CKE1: Rank 1 ODT0: Rank 0 ODT1: Rank 1 Rank 0 = U1b–U4b, U6b–U9b Rank 1 = U1t–U4t, U6t–U9t VSS 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Functional Block Diagram PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR2 SDRAM module effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. A bidirectional data strobe (DQS, DQS#) is trans- mitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM device during READs and by the memory con- troller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Com- mands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Serial Presence-Detect EEPROM Operation DDR2 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the mod- ule type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to VSS, permanently disabling hardware write protection. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM General Description PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 7: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD VDD supply voltage relative to VSS –1.0 2.3 V VIN, VOUT Voltage on any pin relative to VSS –0.5 2.3 V II Input leakage current; Any input 0V ≤ VIN ≤ VDD; VREF input 0V ≤ VIN ≤ 0.95V; (All other pins not under test = 0V) Address inputs, RAS#, CAS#, WE# –80 80 µA S#, CKE, ODT, CK, CK# –40 40 DM –10 10 IOZ Output leakage current; 0V ≤ VOUT; DQ and ODT are disabled DQ, DQS, DQS# –10 10 µA IVREF VREF leakage current; VREF = valid VREF level –32 32 µA TA Module ambient operating temperature Commercial 0 70 °C Industrial –40 85 °C TC1 DDR2 SDRAM component operating tem- perature2 Commercial 0 85 °C Industrial –40 95 °C Notes: 1. The refresh rate is required to double when T C exceeds 85°C. 2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail- able on Micron’s Web site. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Electrical Specifications PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 8: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -1GA -187E -80E -25E -800 -25 -667 -3 -53E -37E -40E -5E Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to en- sure the required supply voltage is maintained. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM DRAM Operating Conditions PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Table 9: DDR2 IDD Specifications and Conditions – 2GB Values shown for MT47H256M8THJ DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter Symbol -800 -667 -53E -40E Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD0 816 776 656 656 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W IDD1 976 896 856 816 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus in- puts are floating IDD2P 112 112 112 112 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q 456 376 376 336 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Da- ta bus inputs are switching IDD2N 496 416 416 376 mA Active power-down current: All device banks open; tCK = tCK (IDD); CKE is LOW; Other control and address bus in- puts are stable; Data bus inputs are floating Fast PDN exit MR[12] = 0 IDD3P 296 296 296 296 mA Slow PDN exit MR[12] = 1 136 136 136 136 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid com- mands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N 576 536 456 416 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W 1376 1176 1096 936 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid com- mands; Address bus inputs are switching; Data bus inputs are switching IDD4R 1376 1176 1096 936 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other con- trol and address bus inputs are switching; Data bus inputs are switching IDD5 1976 1816 1776 1736 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD6 112 112 112 112 mA 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM IDD Specifications PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Table 9: DDR2 IDD Specifications and Conditions – 2GB (Continued) Values shown for MT47H256M8THJ DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter Symbol -800 -667 -53E -40E Units Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching IDD7 2776 2336 2256 2176 mA 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM IDD Specifications PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Table 10: DDR2 IDD Specifications and Conditions – 4GB Values shown for MT47H512M8THM DDR2 SDRAM only and are computed from values specified in the 4Gb TwinDie (512 Meg x 8) component data sheet Parameter Symbol -800 -667 -53E Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD0 TBD 904 824 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus in- puts are switching; Data pattern is same as IDD4W IDD1 TBD 1264 944 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are float- ing IDD2P TBD 128 128 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q TBD 504 424 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N TBD 584 504 mA Active power-down current: All device banks open; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating Fast PDN exit MR[12] = 0 IDD3P TBD 384 344 mA Slow PDN exit MR[12] = 1 TBD 144 144 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N TBD 544 464 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W TBD 1304 1144 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R TBD 1464 1304 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD5 TBD 2344 2184 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and ad- dress bus inputs are floating; Data bus inputs are floating IDD6 TBD 128 128 mA Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching IDD7 TBD 2824 2464 mA 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM IDD Specifications PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 11: SPD EEPROM Operating Conditions Parameter/Condition Symbol Min Max Units Supply voltage VDDSPD 1.7 3.6 V Input high voltage: logic 1; All inputs VIH VDDSPD × 0.7 VDDSPD + 0.5 V Input low voltage: logic 0; All inputs VIL –0.6 VDDSPD × 0.3 V Output low voltage: IOUT = 3mA VOL – 0.4 V Input leakage current: VIN = GND to VDD ILI 0.1 3 µA Output leakage current: VOUT = GND to VDD ILO 0.05 3 µA Standby current ISB 1.6 4 µA Power supply current, READ: SCL clock frequency = 100 kHz ICCR 0.4 1 mA Power supply current, WRITE: SCL clock frequency = 100 kHz ICCW 2 3 mA Table 12: SPD EEPROM AC Operating Conditions Parameter/Condition Symbol Min Max Units Notes SCL LOW to SDA data-out valid tAA 0.2 0.9 µs 1 Time bus must be free before a new transition can start tBUF 1.3 – µs Data-out hold time tDH 200 – ns SDA and SCL fall time tF – 300 ns 2 SDA and SCL rise time tR – 300 ns 2 Data-in hold time tHD:DAT 0 – µs Start condition hold time tHD:STA 0.6 – µs Clock HIGH period tHIGH 0.6 – µs Noise suppression time constant at SCL, SDA inputs tI – 50 µs Clock LOW period tLOW 1.3 – µs SCL clock frequency tSCL – 400 kHz Data-in setup time tSU:DAT 100 – ns Start condition setup time tSU:STA 0.6 – µs 3 Stop condition setup time tSU:STO 0.6 – µs WRITE cycle time tWRC – 10 ms 4 Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and the falling or rising edge of SDA. 2. This parameter is sampled. 3. For a restart condition or following a WRITE cycle. 4. The SPD EEPROM WRITE cycle time ( tWRC) is the time from a valid stop condition of a write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull- up resistance, and the EEPROM does not respond to its slave address. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Serial Presence-Detect PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.

Figure 3: 200-Pin DDR2 SODIMM 3.8 (0.15) MAX Pin 1 67.75 (2.667) 67.45 (2.656) 20.0 (0.787) TYP 1.8 (0.071) (2X) 0.60 (0.024) TYP 0.45 (0.018) TYP 2.0 (0.079) R (2X) Pin 199 Pin 200 Pin 2 Front view 2.0 (0.079) TYP 6.0 (0.236) TYP 63.60 (2.504) TYP 2.55 (0.10) TYP 0.99 (0.039) TYP 30.15 (1.187) 29.85 (1.175) Back view 1.1 (0.043) 0.9 (0.035) 47.4 (1.87) TYP 11.4 (0.45) TYP 4.2 (0.165) TYP U1 U2 U3 U4 U6 U7 U8 U9 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for additional design dimensions. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization some- times occur. 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Module Dimensions PDF: 09005aef821e5bf3 hts16c256_512x64h.pdf - Rev. E 3/10 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved.