MSK4105_15 MSK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
FEATURES: TYPICAL APPLICATIONS DESCRIPTION: EQUIVALENT SCHEMATIC PIN-OUT INFORMATION G1 RTN NC NC G2 RTN NC NC NC S1/D2 S1/D2 S1/D2 Aeronautics & Aerospace Down-Hole Extreme Environments MIL-PRF-38534 & 38535 CERTIFIED FACILITY Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C 10A Continuous Output Current at Tc=190°C Available in Three Lead Bend Configurations Package Isolated for High Voltage Isolation Contact MSK for MIL-PRF-38534 Qualification Status The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with parallel SiC recovery diodes. The hermetic design makes it ideal for use in oil/gas/down-hole, aerospace and other extreme environment applications. The MSK4105 is capable of 10 amps of continuous output current at Tc=190°C. The 600V rating makes the MSK4105 ideal for high bus voltage applications. The package is electrically isolated which allows direct heat sinking and provides good thermal conductivity. The package is a space efficient 18 pin power package with three lead form configurations option available. 8548-132 Rev. B 2/15
+25/-10V 20A 10A 20A Storage Temperature Range Junction Temperature Case Operating Temperature Range MSK4105H MSK4105 -55°C to +200°C 210°C -55°C to +190°C -40°C to +190°C Drain to Source Voltage Gate to Source Voltage Current (Continuous) Tc=25°C Current (Continuous) Tc=190°C Current Pulsed (1mS) Tc=190°C TST TJ TC ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATING NOTES: Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only. Industrial grade devices shall be tested to subgroup 1 unless otherwise specified. Class H ("H" suffix) shall be 100% tested to subgroups 1, 2 and sample tested to subgroup 3. Subgroup 4 testing available upon request. Subgroup 1, 4 TA = +25°C
2 TC = +190°C
3 TC = -55°C
All specifications apply to both the upper and lower sections of the half bridge. VGS=20V unless otherwise specified. Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle. VDS VGS IOUT IOUT IOUTP 8548-132 Rev. B 2/15
TYPICAL PERFORMANCE CURVES 8548-132 Rev. B 2/15 0 1 2 3 4 5 DRAIN CURRENT, IDS (AMPERES) DRAIN-SOURCE VOLTAGE, VDS (VOLTS) TYPICAL OUTPUT CHARACTERISTICS TC = 25°C
4 VOLTS
6 VOLTS
8 VOLTS
10 VOLTS
12 VOLTS
14 VOLTS
20 VOLTS
DRAIN CURRENT, IDS (AMPERES) DRAIN-SOURCE VOLTAGE, VDS (VOLTS) TYPICAL OUTPUT CHARACTERISTICS TC = -55°C 10V 12V 14V 20V 0 0.5 1 1.5 2 2.5 3 CURRENT (AMPERES) SOURCE TO DRAIN VOLTAGE (VOLTS) FREE WHEEL DIODE FORWARD CHARACTERISTICS 200'C -55'C 0 1 2 3 4 5 DRAIN CURRENT, IDS (AMPERES) DRAIN-SOURCE VOLTAGE, VDS (VOLTS) TYPICAL OUTPUT CHARACTERISTICS TC = 200°C 4 V 10V 12V 14V 20V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 1 2 3 4 5 DRAIN CURRENT, ID (AMPERES) GATE VOLTAGE, VG (VOLTS) GATE THRESHOLD VOLTAGE VS TEMPERATURE 200°C 25°C -55°C VDS = 10V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0.001 0.01 0.1 1 10 RTH (J-C) Thermal Impedance (K/W) Time (sec) MSK4105 Transient Thermal Impedance Steady State Mosfet Mosfet Steady State Diode Diode TC=190°C
HIGH TEMP. OPERATING LIFE PERFORMANCE CURVES 4 8548-132 Rev. B 2/15 0.2 0.4 0.6 0.8 0 200 400 600 800 1000 CURRENT (µA) HTOL @ 190°C (HOURS) DRAIN TO SOURCE LEAKAGE CURRENT Tc = 25°C AVG ELECTRICAL SPECIFICATION 20.00 µA (MAX.) 1.54 1.55 1.56 1.57 1.58 0 200 400 600 800 1000 VOLTAGE (V) HTOL @ 190°C (HOURS) DIODE FORWARD VOLTAGE Tc = 25°C AVG ELECTRICAL SPECIFICATION 1.80 V (MAX.) 1.9 2.1 2.2 0 200 400 600 800 1000 VOLTAGE (V) HTOL @ 190°C (HOURS) GATE THRESHOLD VOLTAGE Tc = 25°C AVG ELECTRICAL SPECIFICATION 2.70 V (MAX.) 0.01 0.02 0.03 0.04 0 200 400 600 800 1000 CURRENT (µA) HTOL @ 190°C (HOURS) FORWARD GATE TO SOURCE LEAKAGE CURRENT Tc=25°C AVG MEASUREMENT FOR REFERENCE ONLY 0 200 400 600 800 1000 CURRENT (µA) HTOL @ 190°C (HOURS) REVERSE GATE TO SOURCE LEAKAGE CURRENT Tc = 25°C AVG MEASUREMENT FOR REFERENCE ONLY 370 380 390 400 0 200 400 600 800 1000 VOLTAGE (mV) HTOL @ 190°C (HOURS) DRAIN TO SOURCE VOLTAGE Tc = 25°C AVG ELECTRICAL SPECIFICATION 0.62 V (MAX.)
ESD TRIANGLE INDICATES PIN 1 WEIGHT=24.6 GRAMS TYPICAL MSK4105 H U
ORDERING INFORMATION
The above example is a Class H screened module with leads bent up. LEAD CONFIGURATIONS S= STRAIGHT; U= BENT UP; D= BENT DOWN SCREENING BLANK= INDUSTRIAL; H= MIL-PRF-38534, CLASS H GENERAL PART NUMBER ALL DIMENSIONS ARE SPECIFIED IN INCHES 8548-132 Rev. B 2/15
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. Please visit our website for the most recent revision of this datasheet. Contact MSK for MIL-PRF-38534 qualification status. MSK www.anaren.com/msk
REVISION HISTORY
8548-132 Rev. B 2/15